參考文獻 |
[1] H.-Y. Yang, J.-H. Tsai, C.-H. Wang, C.-S Lin, W.-H. Lin, K.-Y. Lin, T.-W. Huang, and H. Wang, “Design and analysis of a 0.8-77.5-GHz ultra-broadband distributed drain mixer using 0.13-μm CMOS technology,” IEEE Trans. Microw. Theory Tech., vol. 57, no. 3, pp. 562-572, Mar. 2009.
[2] K.-L. Deng, and H. Wang, “A 3-33 GHz PHEMT MMIC distributed drain mixer,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. Dig., May 2002, pp. 151-154.
[3] J.-C. Chien and L.-H. Lu, “40-Gb/s high-gain distributed amplifiers with cascaded gain stages in 0.18-μm CMOS,” IEEE J. Solid-State Circuits, vol. 42, no. 12, pp. 2715-2725, Dec. 2007.
[4] H.-Y. Chang, S.-H. Weng, and C.-C. Chiong, “A 30-50 GHz wide modulation bandwidth bidirectional BPSK demodulator / modulator with low LO power,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 5, pp. 332-334, May. 2009.
[5] T.-Y. Yang, “Microwave / millimeter-wave broadband and low-loss CMOS balun design and applications,” Ph.D. dissertation, Elect. Eng., National Central University, Taiwan, 2008.
[6] J.-H. Tsai, and C.-C. Wang “A 25-55 GHz CMOS sub-harmonic direct-conversion mixer for BPSK demodulator,” in Asia-Pacific Microw. Conf., Dec. 2008, pp. 1-4.
[7] C.-S. Lin, H.-Y. Chang, P.-S. Wu, K.-Y. Lin, and H. Wang, “A 35-50 GHz IQ-demodulator in 0.13-μm CMOS technology,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 1397-1400.
[8] J.-H. Tsai, “Design of 1.2-V broadband high data-rate MMW CMOS I/Q modulator and demodulator using modified Gilbert-cell mixer,” IEEE Trans. Microw. Theory Tech., vol. 59, no. 5, pp. 1350-1360, May 2011.
[9] C.-Y. Wang and J.-H. Tsai, “A 51 to 65 GHz low-power bulk-driven mixer using 0.13 um CMOS technology,” IEEE Microw. and Wireless Compon. Lett., vol. 19, no.8, pp. 521–523, Aug. 2009.
[10] J.-H. Tsai, P.-S. Wu, C.-S. Lin, T.-W. Huang, J. G. J. Chern, and W.-C. Huang “A 25–75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology,” IEEE Microw. and Wireless Compon. Lett., vol. 17, no. 4, Apr. 2007.
[11] Y.-S. Lin, W.-C. Wen, and C.-C. Wang, “13.6 mW 79 GHz CMOS up-conversion mixer with 2.1 dB gain and 35.9 dB LO-RF isolation,” IEEE Microw. and Wireless Compon. Lett., vol. 24, no.2, pp. 126–128, Feb. 2014.
[12] J. Shi, L. Li and T.-J. Cui, “A 60-GHz broadband Gilbert-cell down conversion mixer in a 65-nm CMOS,” IEEE Int. Conf. on Electron Devices and Solid-State Circuits, pp. 1–2, Jun. 2013.
[13] Tom K. Johansen, Jens Vidkjær, and Viktor Krozer, “Analysis and design of wide-band SiGe HBT active mixers,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 7, pp. 2389–2397, May 2005.
[14] S. Hackl, J. Beck, M. Wurzer, and A.L. Scholta, “40 GHz monolithic integrated mixer in SiGe bipolar technology,” in IEEE MTT-S Int. Microw. Symp. Dig., vol. 2, pp. 1241–1244, May 2002.
[15] M.-D. Tsai, C.-S. Lin, C.-H. Wang, C.-H. Lien, and H. Wang, “A 0.1–23-GHz SiGe BiCMOS analog multiplier and mixer based on attenuation-compensation technique,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. Dig., Jun. 2004, pp.417–420.
[16] A. Y.-K. Chen, Y. Baeyens, Y.-K. Chen, and J. Lin, “An 80 GHz high gain double-balanced active up-conversion mixer using 0.18 um SiGe BiCMOS technology,” IEEE Microw. and Wireless Compon. Lett., vol. 21, no.6, pp. 326–328, Jun. 2011.
[17] B. Tzeng, C. H. Lien, H. Wang, Y. C. Wang, P. C. Chao, and C. H. Chen, “A 1–17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching networks,” IEEE Trans. Microw. Theory Tech., vol. 50, pp. 2564–2568, Nov. 2002.
[18] S.-C. Tseng, C.C. Meng, and C.-K. Wu, “GaInP/GaAs HBT wideband transformer Gilbert downconverter with low voltage supply,” Electron. Lett., vol. 44, no. 2, pp. 127–128, Jan. 2008.
[19] A. Khy and B. Huyart ,“A (35 – 45) GHz low power direct-conversion Gilbert-cell mixer in 0.13μm GaAs PHEMT,” in Proc. 40th Eur. Solid-State Circuits Conf., Sep. 2010, pp.1058−1061.
[20] H.-C. Chiu, “Active wideband down-converter for microwave and millimeter-wave applications,” Master. Thesis, Elect. Eng., National Central University, Taiwan, 2011.
[21] A. P. Freundorfer, Y. Jamani and C. Falt, “A Ka-band GaInP/GaAs HBT four-stage LNA,” IEEE Microw. and Millimeter-Wave Monolithic Circuits Symp. Dig., Jun. 1996, pp. 141–144.
[22] C. Pobanz, M. Matloubian, L. Nguyen, Michael Case, Ming Hu, M. Lui, C. Hooper, and P. Janke, “A high gain, low power MMIC LNA for Ka-band using InP HEMTs,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. Dig., Jun. 1999, pp. 149–152.
[23] R. Isobe, C. Wong, A. Potter, T. Long, M. Delaney, R. Rhodes, D. Jang, N. Loi, and Le Minh, “Q-band v-band MMIC chip set using 0.1 μm millimeter-wave low noise InP HEMTs,” in IEEE MTT-S Int. Microw. Symp. Dig., May 1995, vol. 3, pp. 1133–1136.
[24] L. Tran, R. Isobe, M. Delaney, R. Rhodes, D. Jang, J. Brown, L. Nguyen, M. Le, M. Thompson, and T. Liu, “High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs,” IEEE Microw. and Millimeter-Wave Monolithic Circuits Symp. Dig., Jun. 1996, vol. 1, pp. 133–136.
[25] M. V. Aust, and et al, “Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-Based 0.l μm HEMT technologies,” IEEE Microw. and Millimeter-Wave Monolithic Circuits Symp. Dig., Jun. 1996, pp. 89–92.
[26] S. Long, L. Escotte, J. Graffeuill, P. Fellon and D. Roques, “Ka-band coplanar low-noise amplifier design with power PHEMTs,” Eur. Microw. Conf., pp. 17–20, Oct. 2003.
[27] K. H. G. Duh, S. M. J. Liu, S. C. Wang, P. Ho, and P. C. Chao, “High performance Q-band 0.15 μm InGaAs HEMT MMIC LNA,” IEEE Microw. and Millimeter-Wave Monolithic Circuits Symp. Dig., Jun. 1993, pp. 99–102.
[28] Y. Mimino, K. Nakamura, Y. Hasegawa, Y. Aoki, S. Kuroda, and T. Tokumitsu, “A 60 GHz millimeter-wave MMIC chipset for broadband wireless access system front-end,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2002, vol. 3, pp. 1721–1724.
[29] P.-H. Ho, C.-C. Chiong, and H. Wang, “An ultra low-power Q-band LNA with 50% bandwidth in WIN GaAs 0.1-μm pHEMT process,” in Asia-Pacific Microw. Conf., Nov. 2013, pp. 713–715.
[30] G. Wolf, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, G. Dambrine, and H. Happy, “A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers,” Gallium Arsenide and Other Semiconductor Application Symp., Oct. 2005, pp. 93−95.
[31] C. C. Yang, B. Nelson, W. Jones, and B. Allen, “A cryogenically-cooled wide-band HEMT MMIC low-noise amplifier,” IEEE Microw. Guided Wave Lett., vol. 2, pp. 58-60, Feb. 1992.
[32] T. Padmaja, R. S. N. Gongo, P. Ratna, P. S. Vasu, J. S. Babu, and V. S. R. Kirty, “A 18-40 GHz Monolithic GaAs pHEMT low noise amplifier,” in International Conf. on Microw.-08, pp. 309-311, Nov. 2008.
[33] S.-H. Weng, W.-C. Wang, H.-Y. Chang, C.-C. Chiong, and M.-T. Chen, “ A cryogenic 30-50 GHz balanced low noise amplifier using 0.15-μm MHEMT process for radio astronomy applications,” IEEE Radio-Freq. Integr. Tech., pp. 177–179, Nov. 2012.
[34] B. A. Floyd, L. Shi, Y. Taur, I. Lagnado, and K. K. O, “A 23.8-GHz SOI CMOS tuned amplifier,” IEEE Trans. Microw. Theory Tech., vol. 50, pp. 2193–2195, Sep. 2002.
[35] K.-W. Yu, Y.-L. Lu, D. C. Chang, V. Liang, and M. F. Chang, “K-band low-noise amplifiers using 0.18 μm CMOS technology”, IEEE Microw. and Wireless Compon. Lett., vol. 14, no. 3, pp. 106–108, Mar. 2004.
[36] T. Yao, M. Q. Gordon, K. K. W. Tang, K. H. K. Yau, M. Yang, P. Schvan, and S. P. Voinigescu “ Algorithmic design of CMOS LNAs and PAs for 60-GHz radio ,” IEEE J. Solid-State Circuits, vol. 42, no. 5, pp. 1044–1057, May. 2007.
[37] C.-C. Huang, H.-C. Kuo, T.-H. Huang, and H.-R. Chuang, "Low-power, high-gain V-band CMOS low noise amplifier for microwave radiometer applications," IEEE Microw. and Wireless Compon. Lett., vol. 21, no. 2, pp. 104–106, Feb. 2011.
[38] B. Razavi, RF Microelectronics, 2nd ed. Upper Saddle River, NJ: Prentice Hall, 2011.
[39] F. Eshghabadi, M. Dousti, F. Temcamani, B. Delacressoniere, and J. L. Gautier, “A 2.4-GHz front-end system design for WLAN applications using 0.35μm SiGe BiCMOS technology,” in Proc. IEEE 3rd Int. Conf. ICTTA, Damascus, Syria, Apr. 2008, pp. 1-5.
[40] S.-H. Weng, H.-Y. Chang, C.-C. Chiong, and Y.-C. Wang, “Gain-bandwidth analysis of broadband Darlington amplifiers in HBT-HEMT process,” IEEE Trans. Microw. Theory Tech., vol. 60, no. 11, pp. 3458-3473, Nov. 2012.
[41] “Sonnet® User’s Guide,” 13th ed. Sonnet Softw. Inc., North Syracuse, NY, 2009.
[42] C.-H. Shen, “Design of broadband low-loss RF CMOS resistive-ring mixer,” Master. Thesis, Elect. Eng., National Central University, Taiwan, 2009.
[43] J.-H. Tsai, and T.-W. Huang, “35-65-GHz CMOS broadband modulator and demodulator with sub-harmonic pumping for MMW wireless gigabit applications,” IEEE Trans. Microw. Theory Tech., vol. 55, no. 10, pp. 2075−2085, Oct. 2007.
[44] W.-H. Lin, W.-L. Chang, J.-H. Tsai, and T.-W. Huang, “A 30-60GHz CMOS sub-harmonic IQ de/modulator for high data-rate communication system applications,” in IEEE Radio Wireless Symp., Jan. 2009, pp.462−465.
[45] C.-S. Lin, H.-Y. Chang, P.-S. Wu, K.-Y. Lin, and H. Wang, “A 30–50 GHz IQ-demodulator in 0.13-μm CMOS technology,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 1397–1400.
[46] P. Lindberg, E. Ojefors, E. Sonmez, and A. Rydberg, “A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator,” in Proc. Silicon Monolithic Integr. Circuits RF Syst. Top. Meeting, Sep. 8–10, 2004, pp. 247–250.
[47] G. K. W. Hamed, A. P. Freundorfer, Y. M. M. Antar, P. Frank, and D. Sawatzky, “A high-bit rate Ka-band direct conversion QPSK demodulator,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 5, pp. 365–367, May 2008.
[48] Y.-H. Lin, J.-L. Kuo, and H. Wang, “A 60-GHz sub-harmonic IQ modulator and demodulator using drain-body feedback technique,” Eur. Microw. Conf., pp. 365–368, Oct. 2012.
[49] S.-H. Weng, C.-H. Shen, and H.-Y. Chang, “A wide modulation bandwidth bidirectional CMOS IQ modulator/demodulator for microwave and millimeter-wave gigabit applications,” Eur. Microw. Conf., pp. 8–11, Oct. 2012.
[50] M. Tarenghi, “The atacama large millimeter/submillimeter array: overview & status,” Astrophysics and Space Science, vol. 313, pp. 1−7, Jan. 2008.
[51] Available: http://www.vsop.isas.ac.jp/vsop2e/
[52] N. Shiramizu, T. Masuda, M. Tanabe, and K. Washio, “A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. Dig., Jun. 2005, pp. 39–42.
[53] K.-L. Deng, T.-W. Huang, and H. Wang “Design and analysis of novel highgain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages,” IEEE Trans. Microw. Theory Tech., vol.51, pp. 2188−2196, Nov. 2003.
[54] G. Gonzalez, Microwave Transistor Amplifiers Analysis and Design, 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1996, ch. 4. |