參考文獻 |
References
[1] Lon E. Bell, “Cooling, heating, generating power, and recovering waste heat with thermoelectric systems,” Science, 321, 1457, 2008.
[2] D. K. C. MacDonald, “Thermoelectricity: an introduction to the principles,” New York: Wiley, 1962.
[3] A. F. Ioffe, “Semiconductor thermoelements and thermoelectric cooling”, Infosearch, 1957.
[4] D. M. Rowe and Gao Min, “Evaluation of thermoelectric modules for power generation,” Journal of Power Sources, 73, 193, 1998.
[5] M. Strasser, R. Aigner, C. Lauterbach, T. F. Sturm, M. Franosch, and G. Wachutka, ”Micromachined CMOS thermoelectric generators as on-chip power supply,” Sensors and Actuators A, 114, 362, 2004.
[6] H. J. Goldsmid and R. W. Douglas, “The use of semiconductors in thermoelectric refrigeration,” Journal of Applied Physics, 5, 386, 1954.
[7] G. Min and D. M. Rowe, “Cooling performance of integrated thermoelectric microcooler,” Solid-State Electronics, 43, 923, 1999.
[8] H. J. Goldsmid, “thermoelectric refrigeration,” New York: Plenum Press, 1964.
[9] J. Snyder, Thermoelectrics, http://thermoelectrics.matsci.northwestern.edu/thermoelectrics/index.html.
[10] D. M. Rowe, “CRC Handbook on Thermoelectrics,” CRC Press, 1995.
[11] F. Völklein, H. Reith, T. W. Cornelius, M. Rauber, and R. Neumann, “The experimental investigation of thermal conductivity and the Wiedemann-Franz law for single metallic nanowires,” Nanotechnology, 20, 325706, 2009.
[12] C. Kittel, “Introduction to solid state physics,” Hoboken NJ: Wiley, 2005.
[13] G. Slack, “Handbook of Thermoelectrics,” ed. D. M. Rowe, Boca Raton: CRC Press, 1995.
[14] A. J. Minnich, M. S. Dresselhaus, Z. F. Ren, and G. Chen, “Bulk nanostructured thermoelectric materials: current research and future prospects,” Energy and Environmental Science, 2, 466, 2009.
[15] H. J. Goldsmid and R. W. Douglas, “The use of semiconductors in thermoelectric refrigeration,” British Journal of Applied Physics, 5, 386, 1954.
[16] H. J. Goldsmid, A. R. Sheard, and D. A. Wright, “The performance of bismuth telluride thermojunctions,” British Journal of Applied Physics, 9 , 365, 1958.
[17] C. J. Vineis, Ali Shakouri , A. Majumdar, and M. G. Kanatzidis, “Nanostructured thermoelectrics: big efficiency gains from small features,” Advanced Materials, 22, 3970, 2010.
[18] L. D. Hicks and M. S. Dresselhaus, “Thermoelectric figure of merit of a one dimensional conductor,” Physical Review B, 47, 16631, 1993.
[19] L. D. Hicks and M. S. Dresselhaus, “Effect of quantum-well structures on the thermoelectric figure of merit,” Physical Review B, 47, 12727, 1993.
[20] C. J. Glassbrenner and Glen A. Slack, “Thermal conductivity of silicon and germanium from 3oK to the melting point,” Physical Review, 134, A1058, 1964.
[21] P. D. Maycock, “Thermal conductivity of silicon, germanium, III-V compounds and III-V alloys,” Solid-State Electronics, 10, 161, 1967.
[22] H. T. Chang, C. C. Wang, J. C. Hsu, M. T. Hung, P. W. Li, and S. W. Lee, “High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials,” Applied Physics Letters, 102, 101902, 2013.
[23] A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer, E. Muller, Y. Zhang, J. R. Watling, D. Chrastina, G. Isella, J. Stangl, J. P. Hague, J. M. R. Weaver, P. Dobson, and D. J. Paul, “The thermoelectric properties of Ge/SiGe modulation doped superlattices”, Journal of Applied Physics, 113, 233704, 2013.
[24] B. Yang, J. L. Liu, K. L. Wang, and G. Chen, “Simultaneous measurements of Seebeck coefficient and thermal conductivity across superlattice,” Applied Physics Letters, 80, 1758, 2002.
[25] B. Yang, W. L. Liu, J. L. Liu, K. L. Wang, and G. Chen, “Measurements of anisotropic thermoelectric properties in superlattices,” Applied Physics Letters, 81, 3588, 2002.
[26] S. T. Huxtable, A. R. Abramson, C. L. Tien, A. Majumdar, C. LaBounty, X. f. Fan, G. Zeng, J. E. Bowers, Ali Shakouri, and E. T. Croke, “Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices,” Applied Physics Letters, 80, 1737, 2002.
[27] T. Borca-Tasciuc, W. Liu, J. Liu, T. Zeng, D. W. Song, C. D. Moore, G. Chen, K. L. Wang, M. S. Goorsky, T. Radetic, R. Gronsky, T. Koga, and M. S. Dresselhaus, “Thermal conductivity of symmetrically strained Si/Ge superlattices,” Superlattices Microstructures, 28, 199, 2000.
[28] S. M. Lee, D. G. Cahill, and R. Venkatasubramanian, “Thermal conductivity of Si–Ge superlattices,” Applied Physics Letters, 70, 2957, 1997.
[29] Z. Li, Q. Sun, X. D. Yao, Z. H. Zhu, and G. Q. Lu, “Semiconductor nanowires for thermoelectrics,” Journal of Materials Chemistry, 22, 22821, 2012.
[30] E. K. Lee, L. Yin, Y. Lee, J. W. Lee, S. J. Lee, J. Lee, S. N. Cha, D. Whang, G. S. Hwang, K. Hippalgaonkar, A. Majumdar, C. Yu, B. L. Choi, J. M. Kim, and K. Kim, “Large thermoelectric figure-of-merits from SiGe nanowires by simultaneously measuring electrical and thermal transport properties,” Nano Letters, 12, 2918-2923, 2012.
[31] J. Lim, K. Hippalgaonkar, S. C. Andrews, A. Majumdar, and P. Yang, “Quantifying surface roughness effects on phonon transport in silicon nanowires,” Nano Letters, 12, 2475, 2012.
[32] J. A. Martinez, Paula P. Provencio, S. T. Picraux, John P. Sullivan, and B. S. Swartzentruber, “Enhanced thermoelectric figure of merit in SiGe alloy nanowires by boundary and hole-phonon scattering,” Journal of Applied Physics, 110, 074317, 2011.
[33] M. C. Wingert, Z. C. Chen, E. Dechaumphai, J. Moon, J. H. Kim, J. Xiang, and R. Chen, “Thermal conductivity of Ge and Ge−Si core−shell nanowires in the phonon confinement regime,” Nano Letters, 11, 5507, 2011.
[34] Y. H. Park, J. Kim, H. Kim, I. Kim, K. Y. Lee, D. Seo, H. J. Choi, and W. Kim, “Thermal conductivity of VLS-grown rough Si nanowires with various surface roughnesses and diameters,” Applied Physics A, 104, 7, 2011.
[35] D. Donadio and G. Galli, “Temperature Dependence of the Thermal Conductivity of Thin Silicon Nanowires,” Nano Letters, 10, 847, 2010.
[36] H. J. Kim, I. Kim, H. J. Choi, and W. C. Kim, “Thermal conductivities of Si1−xGex nanowires with different germanium concentrations and diameters,” Applied Physics Letters, 96, 233106, 2010.
[37] Z. Wang and N. Mingo, “Diameter dependence of SiGe nanowire thermal conductivity,” Applied Physics Letters, 97, 101903, 2010.
[38] P. Martin, Z. Aksamija, E. Pop, and U. Ravaioli, “Impact of Phonon-Surface Roughness Scattering on Thermal Conductivity of Thin Si Nanowires,” Physical Review Letters, 102, 12, 2009.
[39] A. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar, and P. Yang, “Enhanced thermoelectric performance of rough silicon nanowires,” Nature, 451, 163, 2008.
[40] A. I. Boukai1, Y. Bunimovich, J. Tahir-Kheli, J. K. Yu, W. A. Goddard, and J. R. Heath, “Silicon nanowires as efficient thermoelectric materials”, Nature, 451,168, 2008.
[41] D. Li, Y. Wu, P. Kim, L. Shi, P. Yang, and A. Majumdar, “Thermal conductivity of individual silicon nanowires,” Applied Physics Letters, 83, 2934, 2003.
[42] J. Zou and A. Balandian, “Phonon heat conduction in a semiconductor nanowire,” Journal of Applied Physics, 89, 2932, 2001.
[43] T. Yi, S. Chen, S. Li, H. Yang, S. Bux, Z. Bian, N. A. Katcho, A. Shakouri, N. Mingo, J. P. Fleurial, N. D. Browningc, and S. M. Kauzlarich, “Synthesis and characterization of Mg2Si/Si nanocomposites prepared from MgH2 and silicon, and their thermoelectric properties,” Journal of Materials Chemistry, 22, 24805, 2012.
[44] J. E. Chang, P. H. Liao, C. Y. Chien, J. C. Hsu, M. T. Hung, H. T. Chang, S. W. Lee, W. Y. Chen, T. M. Hsu, T. George, and P W Li, “Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots,” Journal of Physics D: Applied Physics, 45,105303, 2012.
[45] P. E. Hopkins, J. C. Duda, C. W. Petz, and J. A. Floro, “Controlling thermal conductance through quantum dot roughening at interfaces,” Physical Review B, 84, 035438, 2011.
[46] N. Mingo, D. Hauser, N. P. Kobayashi, M. Plissonnier, and A. Shakour, ““Nanoparticle-in-Alloy” approach to efficient thermoelectrics: silicides in SiGe,” Nano Letters, 9, 711, 2009.
[47] X. W. Wang, H. Lee, Y. C. Lan, G. H. Zhu, G. Joshi, D. Z. Wang, J. Yang, A. J. Muto, M. Y. Tang, J. Klatsky, S. Song, M. S. Dresselhaus, G. Chen, and Z. F. Ren, ”Enhanced thermoelectric figure of merit in nanostructured n-type silicon germanium bulk alloy,” Applied Physics Letters, 93, 193121, 2008.
[48] W. Kim and A. J. Majumdar, “Phonon scattering cross section of polydispersed spherical nanoparticles,” Journal of Applied Physics, 99, 084306, 2006.
[49] J. L. Liu, A. Khitun, K. L. Wang, W. L. Liu, G. Chen, Q. H. Xie, and S. G. Thomas, “Cross-plane thermal conductivity of self-assembled Ge quantum dot superlattices,” Physical Review B, 67, 165333, 2003.
[50] K. H. Chen, C. Y. Chien, W. T. Lai, T. George, A. Scherer, and P. W. Li, “Controlled heterogeneous nucleation and growth of germanium quantum dots on nano-patterned silicon dioxide and silicon nitride substrates,” Journal of Crystal Growth & Design, 11, 3222, 2011.
[51] C. Y. Chien, Y. J. Chang, K. H. Chen, W. T. Lai, T. George, A. Scherer, and P. W. Li, “Nanoscale, catalytically-enhanced local oxidation of silicon-containing layers by “burrowing” Ge quantum dots,” Nanotechnology, 22, 435602, 2011.
[52] C. Y. Chien, Y. R. Chang, R. N. Chang, M. S. Lee, W. Y. Chen, T. M. Hsu, and P. W. Li, “Formation of Ge quantum dots array in layer-cake technique for advanced photovolatics,” Nanotechnology, 21, 505201, 2010.
[53] W. T. Lai and P. W. Li, “Growth kinetics and related physical/electrical properties of Ge quantum-dots formed by thermal oxidation of Si1-xGex-on-insulator,” Nanotechnology, 18, 145402, 2007.
[54] P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen, S. C. Lu, and M. J. Tsai, “Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator,” Applied Physics Letters, 83, 4628, 2003.
[55] M. Saitoh, H. Harata, and T. Hiramoto, “Room-temperature demonstration of integrated silicon single-electron transistor circuit for current switching and analog pattern matching,” IEEE International Electron Device Meeting Technical Digest, 187, 2004.
[56] O. Astafiev, K. Inomata, A. O. Niskanen, T. Yamamoto, Y. A. Pashkin, Y. Nakamura, and J. S. Tsai, “Single artificial-atom lasing,” Nature, 449, 588, 2007.
[57] L. Robledo, J. Elzerman, G. Jundt, M. Atature, A. Hogele, S. Falt, and A. Imamoglu, “Quantum computing with electron spins in quantum dots,” Science, 320, 772, 2008.
[58] V. Aroutiounian, S. Petrosyan, A. Khachatryan, and K. Touryan, “Quantum dot solar cells,” Journal of Applied Physics, 89, 2268, 2001.
[59] M. A. Green, “Third generation photovoltaics: solar cells for 2020 and beyond,” Physica E, 14, 65, 2002.
[60] T. Harman, P. Taylor, M. Walsh, and B. LaForge, “Quantum dot superlattice thermoelectric materials and devices,” Science, 297, 2229, 2002.
[61] D. M. T. Kuo and Y. C. Chang, “Thermoelectric and thermal rectification properties of quantum dot junctions,” Physical Review B, 81, 205321, 2010.
[62] Y. Maeda, “Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO2 matrix: Evidence in support of the quantum-confinement mechanism,” Physical Review B, 51, 1658, 1995.
[63] W. Ostwald, “Lehrbuch der Allgemeinen Chemie,” Leipzig: Engelmann, 2, part 1, 1896.
[64] L. Ratke, P. W. Voorhees, “Growth and Coarsening: Ostwald Ripening in Material Processing,” Heidelberg: Springer press, 2002.
[65] S. T. Dunham and J. D. Plummer, “Point‐defect generation during oxidation of silicon in dry oxygen.I. Theory,” Journal of Applied Physics, 59, 2541, 1986.
[66] S. T. Dunham, “Interstitial kinetics near oxidizing silicon interfaces,” Journal of The Electrochemical Society, 136, 250, 1989.
[67] M. Uematsu, H. Kageshima, and K. Shiraishi, “Microscopic mechanism of thermal silicon oxide growth,” Computational Materials Science, 24, 229, 2002.
[68] B. Leroy, “Stresses and silicon interstitials during the oxidation of a silicon substrate,” Philosophical Magazine Part B, 55, 159, 1987.
[69] S. M. Hu, “Kinetics of interstitial supersaturation during oxidation of silicon,” Applied Physics Letters, 43, 449, 1983.
[70] K. Brunner, “Si/Ge nanostructures,” Reports on Progress in Physics, 65, 27, 2002.
[71] G. Medeiors-Ribeiro and R. S. Williams, “Thermodynamics of coherently-strained GexSi1-x nanocrystals on Si(001): alloy composition and island formation,” Nano Letters, 7, 223, 2007.
[72] D. K. Nayak, J. Kimjoo, J. S. Park, J. C. S. Woo, and K. L. Wang, “Wet oxidation of GeSi strained layers by rapid thermal processing,” Applied Physics Letters, 57, 369, 1990.
[73] F. K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B. S. Meyerson, “Oxidation studies of SiGe,” Journal of Applied Physics, 65, 1724, 1989.
[74] J. Eugene, F. K. LeGoues, V. P. Kesan, S. S. Iyer, and F. M. d’Heurle, “Diffusion versus oxidation rates in silicon‐germanium alloys,” Applied Physics Letters, 59, 78, 1991.
[75] J. D. Plummer, M. D. Deal, and P. B. Griffin, “Silicon VLSI Technology: Fundamentals, Practice and Modeling,” New Jersey: Prentice Hall, 2000.
[76] T. Enomoto, R. Ando, and H. Morita, “Thermal oxidation rate of a Si3N4 film and its masking effect against oxidation of silicon,” Journal of Applied Physics, 17, 1049, 1978.
[77] B. E. Deal and A. S. Grove, “General relationship for the thermal oxidation of silicon,” Journal of Applied Physics, 36, 3770, 1965.
[78] P. S. Flint, “The rates of oxidation of silicon,” The Spring Meeting of The Electrochemical Society (Los Angeles), 94, 1962.
[79] C. Y. Chien, “Matrix engineering of Ge quantum-dot for visible photodetection applications,” Ph. D. thesis, 2014.
[80] T. Weber, H. Stolz, W. Osten, M. Heuken, and K. Heime, “Fabry–Perot oscillations in epitaxial ZnSe layers,” Semiconductor Science and Technology, 10, 1113, 1995.
[81] T. Y. Kim, N. M. Park, K. H. Kim, and G. Y. Sung, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Applied Physics Letters, 85, 5355, 2004.
[82] I. Sychugov, R. Juhas, J. Valenta, and J. Linnros, “Narrow luminescence linewidth of a silicon quantum dot,” Physical Review Letters, 94, 087504, 2005.
[83] S. S. Walavalkar, A. P. Homyk, C. E. Hofmann, M. D. Henry, C. Shin, H. A. Atwater, and A. Scherer, “Size tunable visible and near-infrared photoluminescence from vertically etched silicon quantum dots,” Applied Physics Letters, 98, 153114, 2011.
[84] S. Takeoka,K. Toshikiyo, M. Fujii, S. Hayashi, and K.Yamamoto, “Photoluminescence from Si1−xGex alloy nanocrystals,” Physical Review B, 61, 15988, 2000.
[85] S. M. Lee and D. G. Cahill, “Heat transport in thin dielectric films,” Journal of Applied Physics, 8, 2590, 1997.
[86] M. T. Hung, C. C. Wang, J. Y. Chiou, J. C. Hsu, S. W. Lee, T. M. Hsu, and P. W. Li, “Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system,” Applied Physics Letters, 101, 251913, 2012.
[87] M. G. Holland, “Analysis of lattice thermal conductivity,” Physical Review, 132, 2461, 1963.
[88] K. Hippalgonkar, B. Huang, R. Chen, K. Sawyer, P. Ercius, and A. Majumdar, “Fabrication of microdevices with integrated nanowires for investigating low-dimensional phonon transport,” Nano Letters, 10, 4341, 2010.
[89] C. Bera, N. Mingo, and S. Volz, “Marked effects of alloying on the thermal conductivity of nanoporous materials ,” Physical Review Letters, 104, 115502, 2010.
[90] D. Li, Y. Wu, R. Fan, P. Yang, and A. Majumdar, “Thermal conductivity of Si/SiGe superlattice nanowires,” Applied Physics Letters, 83, 3186, 2003.
[91] Y. K. Choi, J. Zhu, J. Grunes, J. Bokor, and G. A. Samorjaj, “Fabrication of sub-10-nm silicon nanowire arrays by size reduction lithography,” The Journal of Physical Chemistry B, 107, 3340, 2003.
[92] Y. Li, K. Buddharaju, N. Singh, and S.J Lee, “Silicon nanowires based thermoelectric generator: design and characterization,” Journal of Electronic Materials, 41, 6, 2012.
[93] B. M. Curtin, E. W. Fang, and J. E. Bowers, “Highly ordered vertical silicon nanowire array composite thin films for thermoelectric devices,” Journal of Electronic Materials, 41, 887, 2012.
[94] S. M. Lee and D. G. Cahill, “Heat transport in thin dielectric films,” Journal of Applied Physics, 81, 2590, 1997.
[95] D. G. Cahill, “Thermal conductivity measurement from 30 to 750 K:the 3 method,” Review of Scientific Instrument, 61, 802, 1990.
[96] R. Venkatasubramanian, “Lattice thermal conductivity reduction and phonon localization like behavior in superlattice structure,” Physical Review B, 61, 3091, 2000.
[97] H, Kim, I. Kim, H. J. Choi, and W. Kim, “Thermal conductivities of Si1-xGex nanowires with different germanium concentrations and diameters,” Applied Physics Letters, 96, 233106, 2010.
[98] N. Mingo, L. Yang, D. Li, and A. Majumdar, ”Predicting the thermal conductivity of Si and Ge nanowires,” Nano Letters, 3, 1713, 2003.
[99] N. Tomozeiu, S. Antohe, and M. Modreanu, “Electrical properties of LPCVD polysilicon deposited in the vicinity of amorphous – polycrystalline phase,” Journal of Optoelectronics and Advanced Materials, 2, 657, 2000.
[100] D. A. Neamen, “Semiconductor Physics & Devices,” McGraw-Hill, 2002.
[101] H. Iwai, T. Ohguro, and S. Ohmi, “NiSi salicide technology for scaled CMOS,” Microelectronic Engineering, 60, 157, 2002.
[102] C. Lavoie, F. M. d’Heurle, C. Detavernier, and C. Cabral Jr., “Towards implementation of a nickel silicide process for CMOS technologies,” Microelectronic Engineering, 70, 144, 2003.
[103] K. De Keyser, C. Van Bockstael, R. L. Van Meirhaeghe, C. Detavernier, E. Verleysen, H. Bender, W. Vandervorst, J. Jordan-Sweet, and C. Lavoie, “Phase formation and thermal stability of ultrathin nickel-silicides on Si(100),” Applied Physics Letters, 96, 173503, 2010.
[104] M. Tinani, A. Mueller, Y. Gao, E. A. Irene, Y. Z. Hu, and S. P. Tay, “In situ real-time studies of nickel silicide phase formation,” Journal of Vacuum Science & Technology B, 19, 376, 2001.
[105] K. Ogata, E. Sutter, X. Zhu, and S. Hofmann, “Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires,” Nanotechnology, 22, 365305, 2011.
[106] S. Habicht, Q. T. Zhao, S. F. Feste, L. Knoll, S. Trellenkamp, B. Ghyselen, and S. Mantl, “Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts,” Nanotechnology, 21, 105701, 2010.
[107] Q. Wang, Q. Luo, and C. Z. Gu, “Nickel silicide nanowires formed in pre-patterned SiO2 trenches and their electrical transport properties,” Nanotechnology, 18, 195304, 2007.
[108] Y. C. Lin, Y. Chen, D. Xu, and Y. Huang, “Growth of nickel silicides in Si and Si/SiOx core/shell nanowires,” Nano Letters, 10, 4721, 2010.
[109] D. Mangelinck and K. Hoummada, “Effect of stress on the transformation of Ni2Si into NiSi,” Applied Physics Letters, 92, 254101, 2008.
[110] W. M. Weber, L. Geelhaar, A. P. Graham, E. Unger, G. S. Duesberg, M. Liebau, W. Pamler, C. Cheze, H. Riechert, P. Lugli, and F. Kreupl, “Silicon-nanowire transistors with intruded nickel-silicide contacts,” Nano Letters, 6, 2660, 2006.
[111] N. S. Dellas, B. Z. Liu, S. M. Eichfeld, C. M. Eichfeld, T. S. Mayer, and S. E. Mohney, “Orientation dependence of nickel silicide formation in contacts to silicon nanowires,” Journal of Applied Physics, 105, 094309, 2009.
[112] L. W. Cheng, H. M. Lo, S. L. Cheng, L. J. Chen, and C. J. Tsai, “Effects of stress on the formation and growth of nickel silicides in Ni thin films on (001)Si,” Materials Science and Engineering A, 409, 217, 2005.
[113] M. A. Nicolet and S. S. Lau, “VLSI Electronics-Microstructure Sciences,” ed N. G. Einspruch and G. B. Larrabee, New York: Academic Press, 6, 329, 1983.
[114] C. Lavoie, C. Detavernier, and P. Besser, “Silicide Technology for Integrated Circuits,” ed L. J. Chen, London: The Institution of Engineering and Technology, p. 95, 2004.
[115] S. L. Zhang and F. M. d’Heurle, “Stresses from solid state reactions: a simple model, silicides,” Thin Solid Films, 213, 34, 1992.
[116] L. J. Chen, “Solid state amorphization in metal/Si systems,” Materials Science and Engineering, 29, 115, 2000.
[117] F. d’Heurle, C. S. Petersson, J. E. E. Baglin, S. J. La Placa, and C. Y. Wong, “Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds,” Journal of Applied Physics, 55, 4208, 1984.
[118] K. C. Lu, W. W. Wu, H. W. Wu, C. M. Tanner, J. P. Chang, L. J. Chen, and K. N. Tu, “In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction,” Nano Letters, 7, 8, 2007.
[119] R. Pretorius, “Prediction of silicide formation and stability using heats of formation,” Thin Solid Films, 290, 477, 1996.
[120] J. P. Lu, D. Miles, J. Zhao, A. Gurba, Y. Xu, C. Lin, and M. Hewson, International Conference on IEEE International Electron Devices Meeting (San Francisco), p. 371, 2002.
[121] Q. Xiang, C. Woo, E. Paton, J. Foster, B. Yu, and M. R. Lin, Symposium on VLSI Technology Digest of Technical Papers (Honolulu), p. 76, 2000.
[122] R. Chau, J. Kavalieros, B. Doyle, A. Murthy, N. Paulsen, D. Lionberger, D. Barlage, R. Arghavani, B. Roberds, and M. Doczy, International Conference on International Electron Devices Meeting (Washington), 29.1.1, 2001.
[123] R. Chau, J. Kavalieros, B. Roberds, R. Schenker, D. Lionberger, D. Barlage, B. Doyle, R. Arghavani, A. Murthy, and G. Dewey, International Conference on International Electron Devices Meeting (San Francisco), p. 45, 2000.
[124] R. Mahajan, C. Chiu, and G. Chrysler, “Cooling a microprocessor chip,” Proceedings of IEEE, 94, 1476, 2006.
[125] Y. Zhang, J. Christofferson, A. Shakouri, G. Zeng, J. E. Bowers, “On-chip high speed localized cooling using superlattice microrefrigerators”, IEEE Transactions on Components, Packaging and Manufacturing Technology, 29, 395, 2006.
[126] I. Chowdhury, R. Prasher, K. Lofgreen, G. Chrysler, S. Narasimhan, R. Mahajan, D. Koester, R. Alley, and R. Venkatasubramanian, “On-chip cooling by superlattice-based thin-film thermoelectrics,” Nature Nanotechnology, 4, 235, 2009.
[127] G. J. Snyder, M. Soto, R. Alley, D. Koester, and B. Conner, “Hot spot cooling using embedded thermoelectric cooler”, 22nd IEEE Semi-Therm Symposium, 135, 2006.
[128] B. M. Curtin, E. W. Fang, and J. E. Bowers, “Highly ordered vertical silicon nanowire array Ccomposite thin films for thermoelectric devices” Journal of Electronic Materials, 41, 887, 2012.
[129] Y. Li, K. Buddharaju, N. Singh, G. Q. Lo, and S.J Lee, “Chip-level thermoelectric power generators based on high density silicon nanowire array prepared with top-down CMOS technology,” IEEE Electron Device Letter, 32, 5, 2011.
[130] Y. Li, K. Buddharaju, N. Singh, and S.J Lee, “Effect of electrical contact resistance in silicon nanowire thermoelectric cooler and a design guideline for on chip cooling applications”, Journal of Electronic Materials, 42,7, 2013.
[131] Y. Zhang, “Silicon Microrefrigerator,” IEEE Transactions on Components and Packaging Technologies, 29, 570, 2006.
[132] Y. Zhang, J. Christofferson, A. Shakouri, G. Zeng, J. E. Bowers, and E. T. Croke, “On-chip high-speed localized cooling using superlattice microrefrigerators,” IEEE Transactions on Components and Packaging Technologies, 29, 395, 2006.
[133] M. P. Gupta, M.-H. Sayer, S. Mukhopadhyay, and S. Kumar, “Ultrathin Thermoelectric Devices for On-Chip Peltier Cooling,” IEEE Transactions on Components, Packaging, and Manufacturing Technology, 1, 1395, 2011.
[134] G. Bulman, P. Barletta, J. Lewis, N. Baldasaro, M. Manno, A. Bar-Cohen, and B. Yang, “Superlattice-based thin-film thermoelectric modules with high cooling fluxes,” Nature Communications, 7, 10302, 2016.
[135] S. H. Choday, M. S. Lundstrom, and K. Roy, “Prospects of Thin-Film Thermoelectric Devices for Hot-Spot Cooling and On-Chip Energy Harvesting,” IEEE Transactions on Components, Packaging, and Manufacturing Technology, 3, 2059, 2013.
[136] C. Chen, R. Jia, H. Yue, H. Li, X. Liu, D. Wu, W. Ding, T. Ye, S. Kasai, H. Tamotsu, J. Chu, and S. Wang, “Silicon nanowire-array-textured solar cells for photovoltaic application,” Journal of Applied Physics, 108, 094318, 2010.
[137] K. Q. Peng and S.T. Lee, “Silicon nanowires for photovoltaic solar energy conversion,” Advanced Materials, 23, 198, 2011.
[138] H. J. In, C. R. Field, and P. E. Pehrsson, “Periodically porous top electrodes on vertical nanowire arrays for highly sensitive gas detection,” Nanotechnology, 22, 355501, 2011.
[139] Z. Li, Y. Chen, X. Li, T. I. Kamins, K. Nauka, and R. S. Williams, “Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires,” Nano Letters, 4, 245, 2004. |