博碩士論文 101222004 詳細資訊




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姓名 黃仁郁(Ren-yu Huang)  查詢紙本館藏   畢業系所 物理學系
論文名稱
(Thin-film growth of Bi and S on Au(100) studied with LEED and XPS)
相關論文
★ Exploration of new methods for growing Ag films on Au(111) studied by ARPES★ 二階段成長法成長銀薄膜在銅(111)面上利用光電子能譜研究
★ 利用角解析光電子能譜術研究銅薄膜在銀(111)基板上的成長★ 利用角解析光電子能譜術探測Ag/Au(111)系統中銀表面態受到光誘發的衰變情形
★ 利用角解析光電子能譜術探測Ag/Au(111)系統中銀表面態受到光誘發的衰變情形★ Sulfur adsorption on Au(100): XPS, LEED and STM study
★ Adsorption and desorption of atomic hydrogen on the surface of thin Ag films on Au(111) studied with ARPES and XPS★ Silicon adsorption on Ag(111): XPS and LEED study
★ The growth of Bi on Ag(111) studied with STM, LEED and XPS★ The investigation of highly ordered Ag films on mica with STM, LEED and XPS
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摘要(中) 本論文中,我們在超高真空的環境下分別透過固態電化學的方式製造硫分子,以及電子束加熱的方式產生鉍原子,並在金(100)表面上進行硫和鉍的薄膜成長,再利用低能電子繞射和X光光電子能譜術來研究金(100)表面上的薄膜成長結構變化以及硫和鉍之間束縛能的變化。鍍鉍在金上的實驗中,我們可以觀察到(1×1)、四個一組的繞射點結構和類似c(4×2)的結構;而透過反覆交替的鍍鉍和曝硫的實驗,最後我們可以從低能電子繞射上觀察到12個圍成圓環的繞射點的有序結構,我們可以從軟體的模擬來確認是一種六方型的結構。透過X光光電子能譜術我們認為這種有序結構中的鉍有兩種電子組態;硫的部分則是藉著束縛能強度來進行數量的估計,最後我們認為單位晶胞內可能會有兩種情況,分別是存有兩顆硫兩顆鉍或是兩顆硫三顆鉍。當這種有序結構加熱至350℃後會崩潰。另外,隨著反覆交替鍍鉍和曝硫的同時,我們透過觀察樣品表面的繞射點化及S 2p、Au 4f和Bi 4f的變化,另外也提出硫和鉍在金(100)面上的成長方式。
摘要(英) The thin-film growth of S and Bi on a clean Au(100)-(5×20) surface was investigated with X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). Sulfur(S2) molecules were generated by electrochemical decomposition of Ag2S, and Bi was deposited by electron beam heated evaporator. As the increase of deposition time, Bi on Au(100) forms (1×1), 4-diffraction-point and c(4×2)-like reconstructions. The repeatedly deposition of Bi and S on Au(100) ended up with 12 ordered diffraction points. The ordered structure observed by LEED was identified as a hexagonal structure in real space, and the XPS study of Bi 4f from ordered structure revealed the presence of 2 components. Besides, the amount of S was estimated by the intensity of S 2p. As a result, we infered that there were 2S and 2Bi or 2S and 3Bi in one unit cell. Combining the process of the deposition of S and B, the growth model for S and Bi on Au(100) was proposed.
關鍵字(中) ★ 鉍
★ 硫
★ 金(100)
★ 低能電子繞射
★ X光光電子能譜數
關鍵字(英) ★ Bismuth
★ Sulfur
★ Au(100)
★ LEED
★ XPS
論文目次 摘要....................................................I
abstract...............................................II
誌謝....................................................III
目錄....................................................IV
圖目錄...................................................VI
第一章 簡介.............................................1
第二章 文獻回顧..........................................2
2.1 金(100)的重排.............................2
2.2 S/Au(100)...............................3
2.3 Bi/Au(100)..............................4
2.4 Bi2S3的相關研究...........................4
第三章 實驗儀器與原理.....................................11
3.1 簡介.....................................11
3.2 超高真空..................................11
3.2.1 機械幫浦..........................12
3.2.2 分子渦輪幫浦.......................12
3.2.3 離子幫浦..........................12
3.2.4 鈦昇華幫浦........................13
3.3 低能電子繞射...............................13
3.4 同步輻射光源...............................14
3.5 電子動能分析儀.............................15
3.6 X-Ray光電子能譜術..........................16
3.6.1 原理.............................16
3.6.2 曲線分析..........................18
3.7 硫產生器..................................18
3.8 鉍蒸鍍槍..................................18
3.9 濺鍍槍....................................19
3.10 樣品清潔與加熱.............................19

第四章 結果與討論.........................................28
4.1 樣品製備..................................28
4.2 在金(100)上逐次鍍鉍至飽和並加熱...............28
4.3 在金(100)上反覆鍍鉍及曝硫....................30
4.4 改變條件在金(100)上反覆鍍鉍及曝硫.............31
4.5 先以硫吸附於金(100)上再反覆鍍鉍及曝硫..........33
4.6 討論......................................35
4.6.1 鉍在金(100)上的變化.................35
4.6.2 硫和鉍在金(100)上的成長..............36
第五章 結論..............................................50
參考文獻...................................................51
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指導教授 陸大安(Dah-an Lu) 審核日期 2014-7-30
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