三維表面電漿元件光電轉換特性之研究

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林正軒(Cheng-hsuan Lin) 查詢紙本館藏

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光電科學與工程學系

論文名稱

三維表面電漿元件光電轉換特性之研究
(Three Dimensional Surface Plasmon Resonance Device for the Application of Optoelectronic Transformation)

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摘要(中)

將太陽光轉換成電能的太陽能電池，是二十一世紀面對能源危機，尋找替代能源中相當重要的研究方向。光電轉換的技術有許多不同方式，有光伏元件(photovoltaic cells)、整流天線(rectenna, rectifying antenna)等。本論文主要研究由整流天線改良的金屬－絕緣層－金屬(Metal－Insulator－Metal
, MIM)結構，此結構可以直接轉換可見光波長的能量。

　　MIM表面電漿結構的光電轉換，主要利用表電漿耦合機制與熱載子穿隧效應兩種方式。其中，隨著近年來奈米技術的純熟，極薄的膜層(<15 nm)都可以被實現後，由MIM結構各層厚度所決定的熱載子穿隧位能障壁已可自由調整。在產生表面電漿的偶合機制上，傳統的菱鏡耦合法對於入射光有特定角度的限制；而對於結構式二維光柵結構MIM元件，雖突破了入射光特定角度了限制條件，但又發現若要產生表面電漿共振，其結構對於入射光的偏振態有所篩選。

　　綜合以上種種限制條件，本論文題出了三維結構的構思：我們利用陽極氧化鋁法製作了二維的奈米孔洞膜板後，結合自我複製式成膜技術設計並完成了三維MIM表面電漿元件。根據量測結果，除了成功觀察到表面電漿的吸收光譜可在可見光波段的高頻區外，此結構也成功突破特定角度、特定偏振的限制；相比於稜鏡耦合法的平板MIM元件，此研究成果大大縮小了整體元件大小；而且在光電轉換的效率上，相比與結構式的二維MIM元件更超過了一個數量級。其中，我們更發現此三維MIM表面電漿結構對應不同的入射光波長時可產生不同強度光電流的特殊現象。

摘要(英)

There are several techniques can transit solar energy as electrical energy, such as solar cell, photodiode or rectenna. Based on the surface plasmonic effect and the hot carrier transportation, the metal-insulator-metal device (MIM) was employed to convert the solar spectrum from the ranges of visible light to infrared region in this study.
In this research, the MIM device was fabricated on an anodic aluminum oxide (AAO) template. The uniform pore size and period of the AAO can be achieved by using the multi-electrolyte-step process. The auto-cloning technique was applied to achieve the three-dimensional MIM. Besides, the Finite Difference Time Domain (FDTD) method was used to simulate the properties the three-dimensional device and realize its plasmonic effect.

Finally, the power conversion efficiency (PCE) 1.34E-03 % of the three-dimensional MIM was achieved under an AM 1.5 solar simulator. And we find the photocurrent of the MIM device is corresponding to the wavelength of the incident light.

關鍵字(中)

★ 金屬-絕緣層-金屬
★ 表面電漿元件
★ 陽極氧化鋁
★ 換酸製程
★ 自我複製技術

關鍵字(英)

★ Metal-Insulator-Metal (MIM)
★ anodic aluminum oxide (AAO)
★ multi-electrolyte-step process (MES)
★ Auto-cloning technique
★ Finite Difference Time Domain (FDTD)

論文目次

摘要 v
Astarte vi
致謝 vii
目錄 viii
圖目錄 xi
表目錄 xv

第一章緒論 1
1-1 文獻探討 1
1-2 研究目的 3
1-3 本文架構 4
第二章表面電漿基礎理論 6
2-1 光電轉換機制 6
2-2 金屬的介電函數 6
2-3 表面電漿理論 12
2-4 MIM元件工作原理 19
2-5 三維MIM表面電漿元件結構 24
第三章三維MIM表面電漿元件模擬設計 25
3-1 有限時域差分法 25
3-1-1 初階設計-膜堆、材料 31
3-1-2 進階設計-MIM元件設計 32
3-2 MIM元件材料選定與比較 34
3-3 模擬參數設定與優化 38
3-2-1 週期模擬 39
3-2-2 下金屬厚度模擬 41
3-2-3 絕緣層厚度模擬 42
3-2-4 上金屬厚度模擬 43
3-4 模擬再優化與討論 44
第四章儀器設備 47
4-1 製程儀器介紹 47
4-1-1 AAO治具 47
4-1-2 雙電子槍蒸鍍離子源輔助蒸鍍系統 48
4-1-3 熱蒸發蒸鍍鍍膜系統 49
4-1-4 原子層沉積 49
4-2 量測儀器介紹 51
4-2-1 太陽能光源模擬器 51
4-2-2 U4100光譜 51
4-2-3 SEM電子顯微鏡 52
第五章三維MIM表面電漿元件製作 53
5-1 基板清洗： 53
5-2 鋁膜鍍製 53
5-3 換酸陽極氧化鋁法製備奈米孔洞陣列[37－39] 54
5-4 單層自我複製結構模 55
5-5 MIM元件各層鍍膜 58
第六章三維MIM表面電漿元件量測與分析 59
6-1 結構分析 59
6-2 量測結果 62
6-3 共振波長對應光電流方向量測結果 65
第七章結論與未來展望 70

參考文獻 71

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指導教授

陳昇暉(Sheng-hui Chen)

審核日期

2014-7-30

推文