晶矽覆蓋層對矽中佈植氫離子擴散的抑制效應

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黃冠中(Kuan-Chung Huang) 查詢紙本館藏

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機械工程學系

論文名稱

晶矽覆蓋層對矽中佈植氫離子擴散的抑制效應
(Suppression Effect of Si/SiO2 Bilayer on Out-diffusion of Hydrogen Ions Implanted in Silicon)

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摘要(中)

現今超大型積體電路的應用方面，SOI 基板比起許多傳統矽基板有著許多
更好的優點，用Smart-CutR的技術可製造出高品質SOI 結構，然而在
Smart-Cut 的製程中氫離子的分布對薄膜轉移之品質有極大影響，矽中氫離
子的濃度必須大於最低可裂片濃度方能進行轉移，因此如何使矽晶圓中所
佈植的氫離子有效的保存在矽晶圓中為薄膜轉移成功與否的關鍵之一。
本實驗利用移除30nm 多晶矽層與100nm 氧化層的試片觀察雙層結構的有
無對氫離子擴散的抑制情形，透過SIMS 檢測觀察試片在移除後四個月後的
氫離子濃度變化，由檢測結果觀察到30nm 多晶矽層對於氫離子擴散抑制效
果明顯，若使用多晶矽與二氧化矽層結構更可以有效阻擋佈植在矽晶圓中
的氫離子向外擴散，使矽中氫離子的濃度下降變慢，延長試片可進行薄膜
轉移的時間。

摘要(英)

Application of modern VLSI circuits, SOI substrate has many
advantages compared to many conventional silicon substrate.Smart-Cut
R technology can produce high-quality SOI structure.However,the
distribution of hydrogen ions implanted in Smart-Cut process has a great
impact on the quality of the film transfer, the concentration of hydrogen
ions in silicon must be higher than the minimum concentration of
lobes.Therefore,how to effective preserve the implanted hydrogen ions in
the silicon wafer is one of the keys to success film transfer.
The experiment remove 30nm poly-silicon layer and 100nm oxide layer,
and observe the effect of double layers structure suppress the hydrogen
ion diffusion in silicon.The hydrogen ion concentration changes detected
by SIMS to observe the test piece after four months removed, the test
results observed that 30nm poly-silicon layer can effective suppress the
hydrogen ion diffusion.Poly-silicon and silicon oxide layer structure is
more effective in blocking implantation outward diffusion of hydrogen ions
in the silicon wafer, the concentration of hydrogen ions in silicon drops
slow, the test strip can extend the time of the transfer film.

關鍵字(中)

★ 晶矽覆蓋層
★ 氫離子擴散

關鍵字(英)

★ Si/SiO2 Bilayer
★ Out-diffusion of Hydrogen Ions

論文目次

目錄
摘要 .................................................... VI
Abstract ............................................... VII
致謝 .................................................. VIII
目錄 .................................................... IX
圖目錄 ................................................. XII
表目錄 ................................................. XIV
第一章緒論 ............................................... 1
1.1 研究背景 ............................................. 1
1.2 研究動機 ............................................. 3
第二章文獻回顧 ......................................... 8
2.1 離子佈植技術 ......................................... 8
2.2 離子佈植造成的矽基材損傷 .............................. 8
2.3 離子佈植應用於薄膜轉移技術 ............................ 9
2.4 蝕刻機制 ............................................ 10
2.4.1 TMAH 應用於濕式蝕刻技術 ............................ 11
2.4.2 HF 應用於蝕刻技術 .................................. 12
2.5 氫在矽晶圓中的現象 .................................. 13
2.5.1 氫氣在氧化矽層與多晶矽層之擴散 .................... 15
2.5.2 氣泡與微裂縫形成機制 .............................. 16
第三章實驗準備與研究步驟 ............................... 24
3.1 實驗試片製備 ........................................ 24
3.2 晶圓清洗 ............................................ 25
3.3 氧化層生成 .......................................... 25
3.4 多晶矽層沉積 ........................................ 26
3.5 氫離子佈植 .......................................... 26
3.6 多晶矽層移除 ........................................ 27
3.7 氧化層移除 .......................................... 27
3.8 高溫熱處理 .......................................... 28
3.9 影像分析 ............................................ 28
3.10 SIMS 檢測 .......................................... 28
3.11 實驗器材與檢測儀器 .................................. 29
第四章結果與討論 ....................................... 36
4.1 退火後氣泡分布分析 .................................. 36
4.2 SIMS 檢測分析 ....................................... 37
4.3 多晶矽覆蓋層對佈植氫離子擴散濃度影響 ................ 42
4.4 多晶矽覆蓋層與氧化層對佈植氫離子擴散濃度影響 ........ 42
第五章結論 ............................................. 45
參考文獻 ............................................. 47

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指導教授

李天錫(Tian-Shi Lee)

審核日期

2014-6-16

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