The Deposition and Microstructure of Tungsten Oxide Films by Physical Vapor Deposition

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姓名

黃柏欽(Bo-qin Huang) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

(The Deposition and Microstructure of Tungsten Oxide Films by Physical Vapor Deposition)

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摘要(中)

本研究使用直流磁控濺鍍製程在不同的氧流量參數下鍍製三氧化鎢薄膜。在濺鍍過程中，使用電漿探針、光發射光譜儀(OES)與質譜儀監控整個電漿製程。透過電漿量測參數與靶材電壓的變化情形，可發現在低氧流量(5 sccm)時，所鍍製的氧化鎢薄膜偏金屬態，隨著氧流量的增加(10-20 sccm)，逐漸變成非晶的三氧化鎢薄膜。濺鍍後的氧化鎢薄膜接著使用X光繞射儀(XRD)、掃描式電子顯微鏡(SEM)、能量散射儀(EDS)、光電子能譜儀(XPS)、UV-VIS分光光譜儀及橢圓儀，做薄膜結構、化學成分及光學分析。最後是電致變色的功能測試，採用電化學方法，使鋰離子(Li+)與電子進出氧化鎢薄膜而達到變色與透明的效果，並以定電位量測及循環伏安法作為電致變色的定量分析，藉由材料分析與電化學測試的結果發現氧化鎢薄膜在接近它的化學劑量比例時，有較佳的電致變色效果。

摘要(英)

Tungsten oxide film under different oxygen flow rates are deposited by DC sputtering. The deposition process is monitored by the Langmuir probe, optical emission spectrometer and mass spectrometer. From the voltage change at target and all plasma parameters, we found low oxygen flow rate (5 sccm) only creates metal-rich tungsten oxides films, while higher oxygen flow rate (10 -20 sccm) assures the deposition of amorphous WO3 films. The analyses for the deposited films by XRD, SEM, EDS, XPS and UV-Vis-NIR spectroscopy and ellipsometry also confirm the above claim. To explore the electrochromic function of WO3 films, we choose films deposited under 10 sccm for electrochemical insertion of ions (Li+) and electrons. The WO3 films successfully demonstrated the switch between color and bleach states by both pontetiostat and cyclic voltammetry. Quantitative evaluation on electrochemical tests indicates that WO3 film with composition close to its stoichiometry is an optimal choice for electrochormic function.

關鍵字(中)

★ 非晶氧化鎢薄膜
★ 電漿探針
★ 光發射光譜儀(OES)
★ 電漿診斷

關鍵字(英)

★ amorphous tungsten oxide film
★ Langmuir probe
★ OES
★ plasma diagnostics

論文目次

CHINESE ABSTRACT i
ENGLISH ABSTRACT ii
ACKNOWLEDGEMENT iii
TABLE OF CONTENTS iv
LIST OF FIGURES vii
LIST OF TABLES xi

CHAPTER
ONE INTRODUCTION 1
1-1 Introduction to Electrochromism 1
1-2 WO3 structures and properties 3
1-3 Applications for electrochromicdevices 6
1-4 Scope and objective 8

CHAPTER TWO
EXPERIMENTS 9
2-1 Physical vapor deposition and sputtering 9
2-1-1 Substrate preparation 10
2-1-2 Film deposition 10
2-2 Plasma Diagnostic Tools 12
2-2-1 Langmuir probe 12
2-2-2Optical emission spectrometer 13
2-2-3 Mass spectrometer 13
2-3 Film characterization tools 15
2-3-1 Surface profiler 15
2-3-2 Field emission scanning electron microscope 15
2-3-3X-ray diffractometer 16
2-3-4Energy dispersive spectrometry 17
2-3-5Raman Spectrometer 17
2-3-6X-ray photoelectron spectrometer 18
2-3-7 UV-VIS-NIR spectrophotometer 19
2-3-8 Ellipsometer 20
2-3-9 Electrochemical test 21

CHAPTER THREE
STRUCTURE PROPERTY OF WO3 22
4-1 Plasma diagnostics during the film deposition22
3-1-1 Deposition rate 22
3-1-2 Variation of Target Voltage 23
3-1-3 I-V Curve from Langmuir Probe 24
3-1-4 OES Spectra 30
3-1-5 Mass Spectra 32
4-2 Properties and structures of as-deposited films
35
3-2-1 XRD spectra 35
3-2-2 SEM images of deposited films 35
3-2-3 Raman spectra 37
3-2-4 EDS spectra 39
3-2-5XPS Spectra 40
3-2-6 UV-Vis-NIR spectra and optical band gap 44
3-2-7 Ellipsometry 47

CHAPTER FOUR
ELECTROCHROMISM OF WO3 50
4-1 Electrochemical test I – potential stat 50
4-2 Electrochemical test II – cyclic voltammetry 57

CHAPTER FIVE
CONCLUSION 60
CHAPTER SIX
REFERENCE 62

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指導教授

李泉、洪銘聰(Chuan Li Ming-tsung Hung)

審核日期

2014-7-31

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