參考文獻 |
[1] 楊昌中,能源領域中的奈米科技研究,工業研究院能源與環境
研究所,民國95 年12 月。
[2] P. Würfel, Physics Of Solar Cells, Willey-VCH Verlag GmbH & Co.KgaA, 2005.
[3] 黃惠良,曾百亨,太陽電池,五南出版社,民國97 年12 月。
[4] 熊谷秀,科學發展月刊,349期,34-41頁,民國93 年。
[5] Swanson, R. M., “A vision for crystalline silicon photovoltaics”, Progress in Photovoltaics, Vol. 14, pp. 443-453, 2006.
[6] Parida, B. Iniyan, S. Goic, R., “A review of solar photovoltaic technologies”, Renewable & Sustainable Energy Reviews, Vol. 15, pp. 1625-1636, 2011.
[7] Microdevices, N., 太陽電池-日本的勝算, pp. 28, 2008.
[8] Hitoshi Sakata and Makoto Tanaka, “Sanyo’s Challenges to the Development of High-efficiency HIT Solar Cells and the Expansion of HIT Business”, IEEE 4th World Conference, 2006.
[9] 顧鴻濤,太陽能電池元件導論,全威圖書有限公司,台北,民國97 年。
[10] Pelanchon, F., P. Mialhe, J. P. Charles, “The photocurrent and the open circuit voltage of a silicon solar cell”, Solar cells, Vol. 28(1), pp. 41-55, 1990.
[11] Y. Yamamoto, Y. Uraoka, T. Fuyuki, “Passivation Effect of Plasma Chemical Vapor Deposited SiNx on Single Crystalline Silicon Thin Film Solar Cells”, Japanese Journal of Applied Physics, Vol. 42, pp. 5135-5139, 2003.
[12] Burrows, M. Z., et al., “Role of hydrogen bonding environment in a-Si:H films for c-Si surface passivation”, Journal of Vacuum Science & Technology A, Vol. 26(4), pp. 683-687, 2008.
[13] J. Sritharathikhun, C. Banerjee, M. Otsubo, T. Sugiura, H. Yamamoto, T. Sato, A. Limmanee, A. Yamada, M. Konagai, “Surface Passivation of Crystalline and Polycrystalline Silicon Using Hydrogenated Amorphous Silicon Oxide Film”, Japanese Journal of Applied Physics, Vol. 46(6A), pp. 3296-3300, 2007.
[14] M. Quirk and J. Serda, Semiconductor Manufacturing Technology, Ch.11 Deposition, 2001.
[15] 莊達人,VLSI製造技術,高立圖書有限公司,民國85 年。
[16] M. S. Valipa, E. S. Aydil, D. Maroudas, “Atomistic calculation of the SiH3 surface reactivity during plasma deposition of amorphous silicon thin films”, Surface Science, Vol. 572, pp. 339-347, 2004.
[17] A. von Keudell and J. R. Abelson, “Direct insertion of SiH3 radicals into strained Si-Si surface bonds during plasma deposition of hydrogenated amorphous silicon films”, Physical Review B, Vol. 59, no. 8, Article ID 5791, 1999.
[18] H. Sterling and R. Swann, “Chemical vapor deposition promoted by rf discharge”, Solid-State Electronics, Vol. 8, pp.653-654, 1965.
[19] W. E. Spear and P. G. LeComber, “Investigation of the localized
state distribution in amorphous Si films”, Journal of Non-Crystalline Solids, Vol. 8-10, pp. 727-738, 1972.
[20] A. Triska, D. Dennison, and H. Fritzsche, “Hydrogen content in
Amorphous Ge and Si prepared by RF decomposition of GeH4 and SiH4”, Bulletin of American Physics Society, Vol. 20, pp. 392-397, 1975.
[21] M. B. Howard, “Hydrogen collision model of light induced
metastability in hydrogenated amorphous silicon”, Solid State Communications, Vol. 105, pp. 387-391, 1998.
[22] A. H. Mahan, D. L. Williamson, B. P. Nelson, R. S. Crandall, “Small angle X-ray scattering studies of microvoids in a-SiC:H and a-Si:H”, Solar Cells, Vol. 27, pp. 465-476, 1989.
[23] M. Stutzmann, W. B. Jackson and C. C. Tsai, “Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study”, Physical Review B, Vol. 32, pp. 23, 1985.
[24] D. Redfield and R. H. Bube, “Defects in amorphous silicon Extrinsic or intrinsic”, Journal of Non-Crystalline Solids, Vol. 137 & 138, pp. 215-218, 1991.
[25] D. Staebler and C. Wronski, “Reversible conductivity changes in
Discharge produced amorphous Si”, Applied Physics Letters, Vol. 31, pp. 292-294, 1977.
[26] Y. Ruoche and L. Kuixun, “Relative abundance ratio of SiH2 and SiH3 radicals in the course of silane radio frequency glow discharge”, 1997.
[27] M. Kishner, “On the balance between silylene and silyl radicals in rf glow discharges in silane: The effect on deposition rates of a-Si:H”, Journal of Applied Physics, Vol. 62, pp. 2803-2811, 1987.
[28] Philipp H. R, “Optical properties for non-crystalline Si, SiO, SiOx and SiO2”, Journal of Physics and Chemistry of Solids, Vol. 32, pp. 1935-1945, 1972.
[29] H. Watanabe, K. Haga, and T. Lohner, “Structure of high photosensitivity silicon oxygen alloy films”, Journal of Non-Crystalline Solids, Vol. 1085-1088, pp. 164-166, 1993.
[30] Kushner M. J., “A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon”, Journal of Applied Physics, Vol. 63, pp. 2532-2551, 1988.
[31] Guizot J. L., Nomoto K. and Matsuda A., “Surface reactions during the a-Si:H growth in the diode and triode glow discharge reactors”, Surface Science, Vol. 244, pp. 22-38, 1991.
[32] M. J. Kerr and A. Cuevas, “Very low bulk surface recombination in oxidized silicon wafers”, Semiconductor Science and Technology, Vol. 17, pp. 35-38, 2002.
[33] M. J. Kerr and A. Cuevas, “Recombination at the interface between silicon and stoichiometric plasma silicon nitride”, Semiconductor Science and Technology, Vol. 17, pp. 166-172, 2002.
[34] M. Hofmann, J. Rentsch, R. Preu, “Dry plasma processing for industrial crystalline silicon solar cell production”, The European Physical Journal Applied Physics, Vol. 52, no. 1, Article ID 11101, 2010.
[35] M. Taguchi, K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama, O. Oota, Prog, “HIT cells high efficiency crystalline Si cells with novel structure”, Photovoltaics: Research and Applications, Vol. 8, pp. 503, 2000.
[36] M. Vetter, A. Orpella, J. Puigdollers, A. Cuevas, R. Alcubilla, “Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films”, Applied Physics Letters, Vol. 79, pp. 2199-2201, 2001.
[37] SANYO North America Corporation, Basic Structure of a HIT Cell,
http://us.sanyo.com/Solar/SANYO-HIT-Technology.
[38] H. Fujiwara, T. Kaneko, and M. Kondo, “Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells”, Applied Physics Letters, Vol. 91, no. 13, Article ID 133508, 2007.
[39] T. Mueller, S. Schwertheim, M. Scherff, and W. R. Fahrner, “High quality passivation for heterojunction solar cells by hydrogenated amorphous silicon suboxide films”, Applied Physics Letters, Vol. 92, no. 3, Article ID 033504, 2008.
[40] Haga, K. Yamamoto, K. Kumano, M. Watanabe, H., “Wide optical gap a-Si:O:H films prepared from SiH4 CO2 gas mixture”, Japanese Journal of Applied Physics, Vol. 25, pp. 39-41, 1986.
[41] H. Yamamoto, M. Ohtsubo, T. Sugiura, A. Limmanee, T. Sato, S. Miyajima, A. Yamada and M. Konagai, “Low Temperature Deposition of a-SiO:H films for high quailty rear surface passivation”, 22nd European Conference on Optical Communication, 2007. [42] F. Einsele, W. Beyer and U. Rau, “Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon solar cells”, Journal of Applied Physics, Vol. 112, Article ID 054905, 2012. [43] T. Mueller, S. Schwertheim and W. R. Fahrner, “Crystalline silicon surface passivation by high frequency plasma enhanced chemical vapor deposited nanocomposite silicon suboxides for solar cell applications”, Journal of Applied Physics, Vol. 107, Article ID 014504, 2010.
[44] T. Muellera, J. Wonga and A. G. Aberlea, “Heterojunction Silicon Wafer Solar Cells using Amorphous Silicon Suboxides for Interface Passivation”, Energy Procedia, Vol. 15, pp. 97-106, 2011.
[45] F. Einsele, W. Beyer and U. Rau, “Annealing studies of substoichiometric amorphous SiOx layers for c-Si surface passivation”, Physica Status Solidi (c), Vol. 7, pp. 1021-1024, 2010.
[46] J. Ge, M. Tang, J. Wong, Z. Zhang, T. Dippell, M. Doerr, O. Hohn, M. Huber, P. Wohlfart, A. G. Aberle and T. Mueller, “Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide”, International Journal of Photoenergy, Vol. 2014, Article ID 752967, 2014.
[47] D. L. Meier, M. R. Page, E. Iwaniczko, Y, Xu, Q. Wang, H. M. Branz, “Determination of Surface Recombination Velocities for Thermal Oxide and Amorphous Silicon on Float Zone Silicon”, 17th NREL Crystalline Silicon Workshop, August, 2007.
[48] 張世育, 「矽量子點鑲嵌在氮化矽薄膜之合成與光學性質研究」, 中華大學,碩士論文,民國94 年。
[49] T. S. Horanyi, T. Pavelka, P. Tutto, “In situ bulk lifetime measurement on silicon with a chemically passivated surface”, Applied Surface Science, Vol. 63, pp. 306-311, 1993.
[50] T. Nishimoto, M. Takai, H. Miyahara, M. Kondo and A. Matsuda et al., “Amorphous silicon solar cells deposited at high growth rate”, Journal
Non-Crystalline Solids, Vol. 299, pp. 1116–1122, 2002.
[51] S. Guha, J. Yang, S. Jones, Y. Chan and D. Williamson et al., “Effect of microvoids on initial and light-degraded efficiencies of hydrogenated amorphous silicon alloy solar cells”, Applied Physics Letters, Vol. 61, pp. 1444-1447, 1992.
[52] Lucovsky G., et al., “Oxygen bonding environments in glow discharge deposited amorphous silicon hydrogen alloy films”, Physical Review B, Vol. 28, pp. 3225–3233, 1983.
[53] G. Jellison, F. Modine, “Parameterization of the optical functions of amorphous materials in the interband region”, Applied Physics Letters, Vol. 69, pp. 371-378, 1996.
[54] 樊洁平,劉惠民,田強,「光吸收介質的吸收係數與介電函數虛部的關係」,大學物理,28卷,3期,民國98 年。
[55] S. Kageyama, M. Akagawa and H. Fujiwara, “Dielectric function of a-Si:H based on local network structures”, Physical Review B, Vol. 83, Article ID 195205, 2011.
[56] C. Piamonteze, A. C. Iniguez, L. R. Tessler, “Environment of Erbium in a-Si:H and a-SiOx:H”, Physical Review Letters, Vol. 81, no. 21, 1998.
[57] C. C. Tsai, G. B. Anderson, R. Thompson and B. Wacker, “Control of silicon network structure in plasma deposition”, Journal Non Crystalline Solids, Vol. 114, pp. 151-153, 1989.
[58] A. Matsuda, “Formation kinetics and control of microcrystallite in uc-Si:H from glow discharge plasma”, Journal Non-Crystalline Solids, Vol. 59 & 60, pp. 767-774, 1983.
[59] K. Nakamura, K. Yoshino, S. Tekeoka and I. Shimizu, “Roles of atomic hydrogen in chemical annealing”, Japanese Journal of Applied Physics, Vol. 34, pp. 442-449, 1995.
[60] A. Szekeres, M. Gartner, F. Vasiliu, M, Marinov, G. Beshkov, “Crystallization of a-Si:H films by rapid thermal annealing”, Journal of Non-Crystalline Solid, Vol. 227, pp. 954-957, 1998. |