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姓名	洪肇穎(Chao-Ying Hung)  查詢紙本館藏	畢業系所	能源工程研究所
論文名稱	雷射還原石墨烯之場發射特性探討 (Study of Field Emissive Characteristics of Laser-reduced Graphene Oxides)
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摘要(中)	摘要 本研究主要探討氧化石墨烯(Graphene oxides, GOs）與氧化石墨烯摻雜銀奈米粒子複合材料（Composites of graphene oxides and Silver nanoparticles, GOs-AgNPs）在雷射剝蝕還原（Laser ablation and reduction, LAR）作用後形成還原石墨烯（rGOs）與還原石墨烯-金屬奈米粒子複合物（rGOs-AgNPs）之場發效應特性，接著引入聚乙烯醇-硝酸銀(Composites of Polyvinyl alcohol and Silver nitrate,PVA-AgNO3 )當作導電層材料，並且探討相關機制與特性。 第一部分實驗為GO還原成rGO後具有導電薄膜並同時當作場發源，接著摻雜銀奈米粒子作修飾的研究，GO在雷射功率31.73 W作用還原成rGO後，片電阻~2.2 kΩ/□，此時有一相對低的啟動電場 (Turn-on field, Eturn-on @ J=10 μA/cm2) ~4.21 V/μm，對應的場發射增強因子 (field enhancement factor, β) ~1831。接著引入銀奈米粒子做修飾，當銀奈米粒子之氧化石墨烯薄膜（GO-AgNPs）在摻雜濃度為4.25×10-4 M的情況下，經雷射拔氧還原後，片電阻~1.5 KΩ/□，場發射特性Eturn-on降低至4.17 V/μm，對應的β~2989，確定經由添加銀奈米粒子後降低了啟動電壓，以及提高了場發射增強因子。 第二部分則是增加了PVA-AgNO3當作導電層的使用，並將GO轉印於PVA-AgNO3上，接著雷射功率31.73 W作用還原成rGO，而其中PVA-AgNO3加熱還原成PVA/AgNPs後，導電層片電阻為~0.1 Ω/□。；而場發射特性 Eturn-on 從4.21 V/μm下降至1.88 V/μm，β由1831上升至6363。；最後實驗將銀奈米粒子以及導電層同時應用，GO-AgNPs轉印於PVA-AgNO3上，銀奈米粒子摻雜濃度為4.25 x10-4 M 的情況下，雷射功率31.73 W作用還原成rGO/AgNPs，場發射特性Eturn-on 由4.17 V/μm下降至1.6 V/μm，β由2989上升至7962，經過增加導電層以及摻雜銀奈米粒子這兩種方式修飾獲得的實驗參數為本實驗的最佳值。 關鍵字： 氧化石墨烯、雷射、銀奈米粒子、場發射效應、聚乙烯醇-硝酸銀
摘要(英)	Field emission properties of a reduced graphene oxide (rGO) thin film were characterized in this study. The rGO thin film was prepared based on the following steps. Initially, commercially available graphene oxide (GO) sheets were uniformly dispersed in a solvent. The solution was then deposited upon a glass substrate to form a GO thin film. A pulsed laser was employed to irradiate on the GO thin film. Due to its absorption of the incident laser energy, the GO thin film was instantly increased to an elevated temperature and thermally reduced into an rGO thin film. The field-emission properties are mainly dependent upon the surface morphology and conductivity of the resultant rGO thin film. By varying both the laser power and the laser exposing patterns, the field-emission characteristics of the rGO thin film could be regulated. Results show a laser-annealed rGO thin film with the turn-on field, Eturn-on, of 4.21 V/μm and field enhancement factor, β, of 1831 can be obtained using laser power of 31.73 W. In addition to the rGO thin film, the field-emission properties of a thin film of rGO sheets blending with Ag nanoparticles, rGO-AgNPs thin film, were also examined in this study,the rGO-AgNPs thin film with the turn-on field, Eturn-on, of 4.17 V/μm and field enhancement factor, β, of 2989 can be obtained using laser power of 31.73 W. Here a thin film initially, containing GO sheets, polyvinyl alcohol (PVA) and silver nitrate (AgNO3) had to be prepared prior to the subsequent laser irradiation. It was accomplished by mixing the solution of GO sheets with both the PVA and AgNO3 solutions. The existence of the Ag nanoparticles enhanced the conductivity of the resultant rGO thin film of the field emission properties: the turn-on field was reduced to 1.88 V/μm and the field enhancement factor was increased to 6363. rGO-AgNPs thin film with the turn-on field, Eturn-on, of 1.6 V/μm and field enhancement factor, β, of 7962 can be obtained using laser power of 31.73 W.
關鍵字(中)	★ 氧化石墨烯 ★ 聚乙烯醇-硝酸銀 ★ 銀奈米粒子 ★ 場發射效應 ★ 雷射	關鍵字(英)	★ graphene oxides ★ PVA-AgNO3 ★ AgNPs ★ Field emission ★ laser reduction
論文目次	摘要 i Abstract ii 致謝 iii 目錄 iv 圖目錄 vii 表目錄 xi Chapter 1 緒論 1 1-1 前言 1 1-2 研究背景、目的與方法 3 Chapter 2 文獻回顧與基礎理論 4 2-1 石墨烯 4 2-1-1 石墨烯檢測 5 2-1-2 加熱還原石墨烯 7 2-1-3 高溫與化學還原比較 8 2-1-4 雷射與石墨烯 10 2-2 場發射理論 13 2-2-1 表面能障與功函數 14 2-2-2 電子場發射 Fowler-Nordheim方程式 (F-N方程式) 15 2-3 石墨烯應用於電子場發射效應 18 2-3-1 直接成長石墨烯 19 2-3-2 非成長型-還原氧化石墨烯 24 2-4 傳承與創新 35 Chapter 3 實驗 36 3-1 實驗用品 36 3-2 實驗設計與目標 42 3-2-1 導電層材料選用說明: 43 3-3 元件製作 44 3-3-1 基板處理 44 3-3-2 銀奈米粒子製備 44 3-3-3 GO薄膜以及GO-AgNPs複合薄膜製備 44 3-3-4 聚乙烯醇-硝酸銀(PVA-AgNO3)複合物及GO膜轉印 45 3-3-5 雷射還原氧化石墨烯製備場發射源 46 3-3-6 雷射還原氧化石墨烯場發射量測 46 3-3-7 元件製作流程整理 47 Chapter 4 實驗結果與討論 48 4-1 材料製備結果 48 4-1-1 銀奈米粒子製備與氧化石墨烯-銀奈米粒子複合材料 48 4-1-2 聚乙烯醇-硝酸銀 複合材料 51 4-2 Nd:YAG 雷射剝離還原 56 4-2-1 片電阻變化 57 4-3 GO-AgNPs成份分析 58 4-3-1 雷射作用後 XPS元素分析 58 4-3-2 雷射作用後 XPS、FESEM 對照分析 62 4-4 表面形貌分析 64 4-4-1 雷射作用後rGO表面形貌分析 64 4-4-2 PVA-AgNO3表面形貌分析 69 4-5 Raman光譜圖 72 4-5-1 GO Raman光譜圖 72 4-5-2 GO-AgNPs Raman光譜圖 73 4-6 場發射特性 75 4-6-1 GO在雷射還原後場發特性 76 4-6-2 GO-AgNPs在雷射還原後場發特性 79 4-6-3 GO 轉印於PVA-AgNO3 複合薄膜上 83 4-6-4 GO、GO-AgNPs 轉印於PVA-AgNO3 複合薄膜上 84 Chapter 5 結論與未來工作 85 5-1 結論 85 5-2 未來工作 86 參考文獻 88 附錄一 GO-AgNPs XPS全譜圖 94 附錄二 GO-AgNPs XPS C1s分峰圖 98 附錄三 AFM 相位圖原理 101 附錄四AFM與Dektak 表面量測差異 103 附錄五拉曼光譜分峰模擬測試 105 附錄六拉曼光譜2D bane 106 碩士論文口試之口試委員問題回覆 108
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指導教授	何正榮(Jeng-Rong Ho)	審核日期	2015-10-19
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