參考文獻 |
[1] S. W. Chung, J. Y. Yu and J. R. Heath, ”Silicon nanowire devices,” Applied Physics Letters, vol. 76, pp. 2068-2070, 2000.
[2] Kui-Qing Peng, Xin Wang, Li Li, Ya Hu and Shuit-Tong Lee, “Silicon nanowires for advanced energy conversion and storage,” Nano Today, vol. 8, pp. 75-97, 2013.
[3] S. Chan, P. M. Fauchet, Y. Li, L. J. Rothberg and B. L. Miller, “Porous SiliconMicrocavities for Biosensing Applications,” phys. stat., sol. (a) vol. 182, pp. 541-546, 2000.
[4] K. Q. Peng, X. Wang and S. T. Lee, “Gas sensing properties of single crystalline porous silicon nanowires,” Applied Physics Letters vol. 95, 2009.
[5] Akram I. Boukai, Yuri Bunimovich, Jamil Tahir-Kheli, Jen-Kan Yu, William A. Goddard III and James R. Heath, “Enhanced thermoelectric performance of rough silicon nanowires, ” Nature, vol. 451, 2008.
[6] Bo-soon Kim, Won-Ki Ju, Min-Woo Lee, Seung-Gol Lee and Beom-Hoan O, “Optimized process of metal assisted silicon wet etching for antireflection layer,” Microelectronic Engineering vol. 98, pp. 395-399, 2012.
[7] A. Uhlir, “Electrolytic shaping of germanium and silicon,” Bell systemTechnology Journal, Vol. 35, pp. 333, 1956
[8] V. Lehmann, “Porous silicon - A new material for MEMS,” IEEE MEMS Workshop, pp. 1-5, 1996.
[9] R. S. Wagner and W. C. Ellis, “Vapor-liquid-solid mechanism of single crystal growth,” Applied Physics Letters vol. 4, pp. 89, 1964.
[10] X. Li and P. W. Bohn, “Metal-assisted chemical etching in HF/H2O2 produces porous silicon,” Applied Physics Letters, vol. 77, pp. 2572-2574, 2000.
[11] Hui Fang, YinWu, Jiahao Zhao and Jing Zhu, “Silver catalysis in the fabrication of silicon nanowire arrays,” Nanotechnology vol. 17, pp. 3768-3774, 2006.
[12] Kuiqing Peng, Yin Wu, Hui Fang, Xiaoyan Zhong, Ying Xu, and Jing Zhu, “Uniform, Axial-Orientation Alignment of One-Dimensional Single-Crystal Silicon Nanostructure Arrays,” Angew. Chem. vol. 44, pp. 2737-2742, 2005.
[13] Huang Z, Shimizu T, Senz S, Zhang Z, Zhang X, Lee W, Geyer N and Gösele U, “Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions,” Nano Lett., pp. 2519-2525, 2009.
[14] Chia-Lung Lee, Kazuya Tsujino, Yuji Kanda, Shigeru Ikeda and Michio Matsumura, “Pore formation in silicon by wet etching using micrometre-sized metal particles as catalysts,” J. Mater. Chem. vol. 18, pp. 1015-1020, 2008.
[15] Xiaopeng Li, Yanjun Xiao, Chenglin Yan1, Jae-Won Song, Vadim Talalaev, Stefan L. Schweizer, Katarzyna Piekielska, Alexander Sprafke, Jung-Ho Lee and Ralf B. Wehrspohn, “Influence of the Mobility of Pt Nanoparticles on the Anisotropic Etching Properties of Silicon,” ECS Solid State Lett. vol. 2, Issue 2, pp. 22-24, 2013.
[16] Aizawa M, Cooper AM, Malac M and Buriak JM, “Silver nano-inukshuks on germanium.” Nano Lett., pp. 815-819, 2005.
[17] Sebastian Strobel, Christopher Kirkendall, Jae-Byum Chang and Karl K Berggren, “Sub-10 nm structures on silicon bythermal dewetting of platinum,” Nanotechnology vol. 21, 2010.
[18] Masahiko Yoshino, Hiroki Osawa and Akinori Yamanaka, “Effects of process conditions on nano-dot array formation by thermal dewetting,” Journal of Manufacturing Processes vol. 14, pp. 478-486, 2012.
[19] Ruiyuan Liu, Fute Zhang, Celal Con, Bo Cui and Baoquan Sun, “Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching,” Nanoscale Research Letters vol. 8, pp. 155-162, 2013.
[20] Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor and Ulrich Gösele, “Metal-Assisted Chemical Etching of Silicon: A Review,” Advanced Materials vol. 23, pp. 285-308, 2011.
[21] C. Chartier, S. Bastide and C. Le’vy-Cle’ment, “Metal-assisted chemical etching of silicon in HF-H2O2,” Electrochimica Acta vol. 53, pp. 5509-5516, 2008.
[22] R. L. Smith and S. D. Collins, “Porous silicon formation mechanisms,” Journal of Applied Physics vol. 71, 1992.
[23] R. M. Tiggelaar, D. B. Thakur, H. Nair, L. Lefferts, K. Seshan and J. G. E. Gardeniers, “Influence of thin film nickel pretreatment on catalytic thermal chemical vapor deposition of carbon nanofibers,” Thin Solid Films vol. 534, pp. 341-347, 2013.
[24] Robert C. Rossi, Ming X. Tan, and Nathan S. Lewis, “Size-dependent electrical behavior of spatially inhomogeneous barrier height regions on silicon,” Applied Physics Letters vol. 77, pp. 2698-2700, 2000.
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