電漿輔助石墨烯直接成長在Pt上成長機制

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鄭又彰(Yu-Chang Cheng) 查詢紙本館藏

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能源工程研究所

論文名稱

電漿輔助石墨烯直接成長在Pt上成長機制
(Growth mechanism of graphene grown on Pt by plasma-assisted CVD)

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摘要(中)

石墨烯是目前備受矚目的新興材料之一，擁有優異的電性及高穿透率，是一種可撓曲的透明導電薄膜，可望取代傳統透明導電膜如氧化銦錫(ITO)、氧化鋅鋁(AZO)等，但由於石墨烯成長製程需要催化金屬及高溫，而光電產品皆無法再承受高溫製程(1050 ℃)，因此石墨烯要應用在透明導電薄膜上還有很大的挑戰，故本研究為了解決此問題，提出直接成長石墨烯在光電產品的方式，首先成長很薄的鉑膜(< 10 nm)作為成長石墨烯之催化金屬薄膜，很薄是因為要保持透明度，再引入電漿輔助低溫(< 350 ℃)化學氣相沉積法，直接製作石墨烯/鉑膜複合的透明導電薄膜。
本論文主要是分析探討濺鍍法與原子層沉積法所成長的鉑膜在不同製程溫度下成長石墨烯的結果，利用霍爾量測儀量測石墨烯電性；利用原子力顯微鏡觀察石墨烯表面結構；利用拉曼分峰及簡易X射線光電子能譜儀分峰探討石墨烯結晶特質和製程後元素組成。使用原子層沉積法得到穿透率約為89 % @ 550 nm的鉑膜，再利用電漿輔助化學氣相沉積法在250 ℃成長石墨烯，其電阻率為3.347×10-2 ohm-cm，穿透率維持在89 % @ 550 nm，完成可直接成長在光電產品之透明導電薄膜的研究。

摘要(英)

Graphene is a new material for flexible transparent conductive film, it has excellent electrical properties and high transmittance. It will expect to replace the traditional transparent conductive film such as indium tin oxide (ITO), oxidation zinc aluminum (AZO), etc., graphene to be applied on the transparent conductive film there is a great challenge because of graphene growth process needs a catalytic metal and high grow temperature. This plan direct growth a graphene / platinum transparent conductive composite film in optoelectronic in order to solve this problem. production of First grow a thin platinum film (<10 nm) as the catalytic metal thin film and growth of graphene by plasma enhanced low temperature (<350 ℃) chemical vapor deposition.
The plan is to analyze and explore graphene is grow at different temperatures on platinum film by the sputtering and atomic layer deposition method. Using Hall measurement to measure electrical properties of graphene; using atomic force microscopy to measure the surface structure of graphene; using Raman and simple X-ray photoelectron spectroscopy to explore the crystallization characteristics of graphene. We obtain the platinum film has transmittance 89% @ 550 nm by atomic layer deposition method. Growing graphene by plasma assisted chemical vapor deposition method at 250 ℃. The resistivity of graphene / platinum transparent conductive composite film was 3.347 × 10-2 ohm-cm and transmittance remained at 89% @ 550 nm.

關鍵字(中)

★ 石墨烯
★ 電漿輔助化學氣相沉積法

關鍵字(英)

★ Graphene
★ PECVD

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vii
表目錄 xii
第一章緒論 1
1-1 前言 1
1-2 研究動機 2
1-3 研究架構 3
第二章基礎理論文獻回顧 5
2-1 石墨烯 5
2-2 透明導電薄膜 8
2-3 原子層沉積技術 10
2-4 電漿源原理及濺鍍法 11
2-5 石墨烯製備方法 13
2-5-1 機械剝離法 14
2-5-2 碳化矽磊晶法 15
2-5-3 氧化石墨烯還原法 15
2-5-4 化學氣相沉積法 16
2-5-5 電漿輔助化學氣相沉積法 18
2-6 金屬薄膜成長石墨烯 21
2-7 選用鉑作為CVD製程之金屬薄膜 24
第三章實驗方法與儀器介紹 26
3-1 石墨烯製程 26
3-1-1電漿輔助化學氣相沉積法製程介紹 26
3-1-2成長石墨烯 27
3-2 分析儀器 27
3-2-1 四點探針 28
3-2-2 拉曼光譜儀 28
3-2-3 X射線光電子能譜儀 31
3-2-4 可見光光譜儀 31
3-2-5 原子力顯微鏡 32
3-2-6 霍爾量測儀 33
第四章結果與討論 34
4-1 濺鍍法鉑膜成長石墨烯之分析 34
4-1-1 不同溫度下成長石墨烯之比較(~ 67 % @ 550 nm) 34
4-1-2 成長製程後退火之比較 38
4-1-3不同溫度下成長石墨烯之比較(~ 73 % @ 550 nm) 41
4-2 ALD法鉑膜成長石墨烯之分析(~ 89 % @ 550 nm) 44
4-3拉曼分峰之分析 47
4-3-1 濺鍍法鉑膜成長石墨烯拉曼分峰之分析(~ 67 % @ 550 nm) 48
4-3-2 成長製程後退火拉曼分峰之分析 51
4-3-3濺鍍法鉑膜成長石墨烯拉曼分峰之分析(~ 73 % @ 550 nm) 54
4-3-4 ALD法鉑膜成長石墨烯拉曼分峰之分析(~ 89 % @ 550 nm) 57
4-4 濺鍍法與ALD法之比較分析 59
4-4-1 拉曼分峰法分析 60
4-4-2 XPS分峰法分析 62
第五章結論 64
參考文獻 67

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指導教授

郭倩丞(Chien-Cheng Kuo)

審核日期

2014-12-19

推文