利用新穎方法製作鋁背表面電場應用於結晶矽太陽能電池

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楊峻豪(Jyun-hao Yang) 查詢紙本館藏

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材料科學與工程研究所

論文名稱

利用新穎方法製作鋁背表面電場應用於結晶矽太陽能電池
(A novel fabrication of Al back surface fields for crystalline silicon solar cells)

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摘要(中)

在本項研究中，為了降低製作局部背表面電場成本，我們提出以簡單新穎的製程方式製作局部背表面電場運用在結晶矽太陽能電池中。背表面鈍化層是使用SiOxNy和SiNx雙層堆疊結構，利用高分子薄膜製作出微米孔洞圖形遮罩，並製備局部背表面鈍化層，運用於電池中，製備出隨機局部鋁背表面電場 (Random local Al back surface field)太陽能電池，探討其不同背表面接觸面積之少數載子生命週期變化和太陽能電池光電轉換特性。
本研究將針對不同孔洞接觸面積變化探討對於電池效率之影響，且電極接觸形狀與鋁背表面電場厚度有強烈的關係，後續並探討剝除局部介電層和接觸面積之關係。本實驗顯示，局部背表面電場能有效的改善載子生命週期，當孔洞接觸面積愈多時，表面鈍化層移除則愈多，有效少數載子生命週期則愈低，當孔洞接觸面積達到百分之四十以上，其有效載子生命週期與整面表面電場幾乎相同。其電池背表面孔洞接觸面積為7.3 %時有最佳光電轉換效率之表現，電池面積為10 mm × 10 mm，製備於p-type單晶矽基板轉換效率可達到13.43 %，比較背面未鈍化，整面背表面電場參考樣品中轉換效率為12.81 %，可看出其光電轉換效率有顯卓的提升。
本研究中，在最佳化隨機鋁局部背表面電場比較整面背表面電場，可觀察出明顯的改善Voc和Jsc，分別提升6.8 mV和2.22 mA，此提升是因為良好背表面內反射和背表面鈍化產生之結果。

摘要(英)

In this work, in order to reduction cost of local back surface field, we propose a simple and novel process was developed for fabrication of local Al back surface field (BSF) for crystalline Si solar cells. Where a stack of SixONy and SiNx is used as rear surface passivation layer containing holes. Random local Al BSF solar cells with microhole patterned dielectric layers as rear surface passivation have been prepared. A detailed investigation of the effect of local holes contact area on the conversion efficiency of the PERC cells was performed.
The effect of rear contact formation on cell efficiency was studied as a function of contact area, hence the metallization fraction. Contact shape and the thickness of Al-BSF layer were found to be heavily dependent on the etch ablation pattern and contact area. When the holes area fraction was higher, the fraction of the passivation film removed was higher and as a consequence, the effective lifetime was smaller. It is shown that the rear surface passivation could effectively increase the lifetime and the cell with around 7.3 % hole area fraction can have best performance. Conversion efficiency of 13.43% was achieved using 10×10 mm, p-type single crystalline silicon wafers. This is a significant improvement when compared to unpassivated, full area aluminum back surface field solar cells, which exhibit only 12.81 % conversion efficiency on the same wafer type.
There is an apparent gain in Jsc and Voc of, respectively, 2.22 mA/cm2 and 6.8 mV for the best random Al BSF cells compared to full Al BSF reference cells, because of better rear internal reflection and rear surface passivation.

關鍵字(中)

★ 矽
★ 鈍化射極背表面接觸
★ 隨機鋁背表面電場
★ 表面鈍化

關鍵字(英)

★ Si
★ PERC
★ Random Al BSF
★ Surface passivation

論文目次

摘要 I
ABSTRACT II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章緒論 1
1-1 前言 1
1-2 研究背景與動機 2
第二章文獻回顧 3
2-1矽晶太陽電池基本理論 3
2-1-1太陽能光譜 4
2-1-2太陽能電池重要參數 5
2-2太陽能電池鋁背表面電場之發展 12
2-3太陽能電池的複合 15
2-4背表面電場理論 17
2-4-1高低階面 (High-low junction) 17
2-4-2鋁除雜 (Al gettering)的特性 19
2-4-3鋁-矽接觸形成基本機制 19
2-5高分子薄膜孔洞形成基本機制 22
第三章實驗步驟 25
3-1薄膜製備 25
3-2製備高分子薄膜 26
3-3製備隨機分佈鋁表面電場 28
3-4隨機分佈鋁背表面電場太陽能電池製作流程 29
3-4-1實驗步驟流程 31
3-5儀器分析 31
3-5-1橢圓儀 (Ellipsomepter) 31
3-5-2有效少數載子生命週期量測儀器 32
3-5-3量子轉換效率 (Quantum efficiency, QE) 32
3-5-4太陽模擬光量測系統 (Solar simulator) 32
第四章結果與討論 33
4-1高分子薄膜製備不同孔洞面積表面形貌之觀察 33
4-2不同介電層薄膜對於鋁金屬退火後之特性分析 38
4-2-1 單層介電層與鋁金屬退火後之少數載子生命週期量測 38
4-2-2雙層介電層與鋁金屬退火後之少數載子生命週期量測 40
4-3剝除局部介電層與局部背表面電場之特性分析 41
4-3-1剝除局介電層之少數載子生命週期 41
4-3-2局部背表面電場之少數載子生命週期 41
4-4不同孔洞面積分佈局部背表面電場太陽能電池之性能比較 43
第五章結論 49
參考文獻 50

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指導教授

陳一塵(I-chen Chen)

審核日期

2014-7-31

推文