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姓名	沈彥宇(Yen-yu Shen)  查詢紙本館藏	畢業系所	電機工程學系
論文名稱	鍺量子點近紅外線光電晶體之光電特性分析與探討 (Characterization of Germanium Quantum Dots Phototransistor for Near Infrared Photodetection and Amplification)
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檔案	[Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載] 本電子論文使用權限為同意立即開放。 已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。 請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。
摘要(中)	本論文專注於鍺量子點光電晶體是否得以應用於近紅外線偵測的量測分析。光電晶體的主要結構特色為以 MOSFET 為基礎結構，在其閘介電層內，埋入 50 nm 鍺量子點於其中。利用選擇性氧化複晶矽鍺柱體來形成 50 nm 鍺量子點/二氧化矽/矽的異質結構，將鍺量子點陣列整合於金氧半場效電晶體中的閘介電層中，與現行之互補式金氧半電晶體技術相容。 量測結果展現出非常低的靜態漏電流值 (~0.27 pA/m2)，主要的原因來自於鍺量子點與矽基板有良好的鍺/矽異質界面品質，ION/IOFF比值大於 106，次臨界斜率 (subthreshold slope；SS) 也降至~195 mV/decade。在入射光波長 850 nm、功率 0.9 mW 照射下有明顯的光電流增益，其IOFF & ION 之光/暗電流比在閘極偏壓 (VG) 分別給予 -5 V 及 4 V 時分別達到 6×106 倍與 64 倍，光響應值也分別達到 0.67 A/W 與 2.7 A/W，證明鍺量子點有很好的吸收能力，並結合此高品質鍺量子點/二氧化矽/矽的異質結構是有利於積體電路中光偵測的應用。此外，我們也對元件分別在未照光及照光的條件下進行變溫量測 (300 K—77 K)，以降低熱擾動機制，確定光電流的來源機制。隨著環境溫度的降低，元件之光電流值並不隨著溫度而下降，證實元件放光機制的來源主要來自於鍺量子點而不是缺陷所致。同時元件量測的頻率響應於 3-dB 頻寬所量測得到的頻率響應值達 410 MHz。
摘要(英)	This thesis focuses on the application of Germanium quantum dots (QDs) phototransistor for the near infrared photodetection and amplification. The main characteristics of the Ge QD phototransistor is based on the framed structure of typical metal-oxide-semiconductor field-effect transistor (MOSFET), incorporating 50 nm Ge QDs embedded in gate dielectrics. The heterostructures of 50 nm Ge QDs/SiO2/Si were formed using the selective oxidation of poly-SiGe pillar, incorporating Ge QDs array into the gate dielectrics of MOSFET, which is a compatible approach with prevailing CMOS technologies. In the darkness, the Ge QDs phototransistors exhibit low off-state leakage (IOFF ~0.27 pA/μm2), high on-off current ratio (ION/IOFF ~106), and good switching behavior (subthreshold slope = 195 mV/dec), indicating a good hetero-interfacial quality of Ge-on-Si due to a 4-5 nm-thick interfacial SiO2 layer between Ge and Si. Additionally, under 0.9 mW illumination at 850 nm, the Ge QDs phototransistors exhibit significant photo-current-to-dark-current ratio and high photoresponsivity as high as 6×106/0.67 A/W at off-state (VG = -5 V), and 64/2.7 A/W at on-state (VG = 4 V), respectively, indicating the strong absorption of Ge QDs. These results offer a great promise for future Si-based optical interconnection applications. Moreover, the temperature-dependent measurement was conducted from 300 to 77 K at the dark and under illumination in order to identify the mechanisms of photocurrent of Ge QDs phototransistors. As temperature decreasing, the photocurrent is invariant indicating the origin of the photoresponse is related to Ge QDs not the traps. The 3-dB bandwidth of Ge QDs phototransistors is ~410 MHz.
關鍵字(中)	★ 鍺量子點 ★ 近紅外線 ★ 光電晶體	關鍵字(英)
論文目次	目錄 第一章 研究動機與簡介1 1-1 光電晶體簡介1 1-2 鍺/矽異質結構成長問題3 1-3 鍺量子點應用與研究動機4 1-4 論文章節概要5 第二章 鍺量子點光電晶體操作原理及製作流程回顧10 2-1 前言10 2-2 鍺量子點光電晶體操作原理10 2-2-1 關閉狀態 (OFF-State) 時的光電晶體的光電流機制11 2-2-2 導通狀態 (ON-State) 時的光電晶體的光電流機制12 2-3 鍺量子光電晶體的製作完整流程13 第三章 鍺量子點光電晶體之電性分析與探討26 3-1 前言26 3-2 暗電流電性量測分析26 3-3 光電流電性量測分析28 3-3-1 照光下之汲極電流-閘極電壓 ( ID-VG ) 電氣特性分析28 3-3-2 照光下之汲極電流-汲極電壓 ( ID-VD ) 電氣特性分析29 3-3-3 光電晶體之光響應度及外部量子效應29 3-3-4 照光下之變溫量測分析31 3-3-5光電晶體之波長相依特性分析31 3-3-6光電晶體之頻率響應32 第四章 總結與未來展望43 參考文獻46
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指導教授	李佩雯(Pei-wen Li)	審核日期	2014-8-15
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