單晶銅成長石墨烯及其可撓性之研究

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姓名

紀堡鐘(Bao-Chung Chi) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

單晶銅成長石墨烯及其可撓性之研究
(Research of the graphene growth on single crystal copper and its flexibility)

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摘要(中)

石墨烯具有高電子遷移率、高導電性、高穿透性、高機械強度，利用於電子元件製備與透明導電膜研究上受到重視。目前大多使用多晶銅箔利用化學氣相沉積法來製備高品質石墨烯，而不同晶向之銅表面與石墨烯之晶格匹配度不一致，所生長石墨烯單晶會產生不同方向性，導致晶界接合處產生較大接合缺陷，阻礙了電子的傳導，並降低其導電特性。

本研究利用化學電鍍剝離法製備表面為銅(111)之銅箔，並利用化學氣相沉積法成長石墨烯，透過製備單一晶向銅箔，降低晶格匹配度所造成之缺陷來成長單一方向性之石墨烯單晶，減少邊界接合缺陷產生，並與目前化學氣相沉積法於多晶銅箔之表面形貌、片電阻、載子遷移率、光穿透率、拉曼訊號比較，證實有較佳之品質。並運用此方法製備石墨烯並轉移至軟性基板上，並進行撓曲度量測，驗證石墨烯比起現今透明導電膜有較佳之可撓性，使其能運用取代現今之透明導電薄膜。

摘要(英)

Graphene is a two-dimensional material composed of carbon atoms arranged in a hexagonal atomic structure. Its advantages are very good transparency, conductivity, excellent mechanical properties and it can be bent arbitrarily. So it achieve a lot of attractions on the applications of the electronic element and the transparent conductive film researches. Many of high quality graphene processes are developed by chemical vapor deposition. However, the grain boundary defects occurred when graphene synthesized on the polycrystalline Cu foil. The polycrystalline Cu grains lead to the different orientation of graphene domains owing to the lattice constant mismatch.

In this study, the Cu (111) foil has been fabricated by the peel-off method. The graphene domains with a consistency of orientation were synthesized on the single crystal Cu (111) thin film by chemical vapor deposition. And the measurements are including sheet resistance, mobility, transmittance, Raman shift and prove the graphene has better quality. Then flexibility measurements has been applied. It shows a remarkable flexibility to compare with the flexible transparent conductive film (ITO).

關鍵字(中)

★ 石墨烯
★ 化學氣相沉積法

關鍵字(英)

★ graphene
★ CVD

論文目次

摘要 I

Abstract II

致謝 III

目錄 IV

圖目錄 VII

表目錄 IX

第一章序論 1

1-1 前言 1

1-2 研究動機 3

1-3 論文架構 4

第二章基礎理論 5

2-1 石墨烯結構與特性 5

2-2 石墨烯製備方法 9

2-2-1 機械剝離法 9

2-2-2 碳化矽磊晶法 10

2-2-3 氧化石墨烯還原法 11

2-2-4 化學氣相沉積法 12

2-3石墨烯晶體結構 14

2-4可撓式透明導電膜 17

第三章 22

3-1 基本實驗流程 22

3-1-1電漿濺鍍剝離銅箔 22

3-1-2化學氣相沉積法製程 25

3-1-3 石墨烯轉印 26

3-1-4 可撓性測試 27

3-2 分析儀器 29

3-2-1 拉曼光譜儀 29

3-2-2 掃描式電子顯微鏡 31

3-2-3 X射線繞射分析儀 32

3-2-4 電子背向繞射分析 33

3-2-5 霍爾量測儀 34

第四章結果與討論 35

4-1剝離銅箔之結果與分析 35

4-1-1濺鍍不同厚度銅膜 35

4-1-2剝離銅箔表面粗糙度 37

4-1-3 X射線繞射與電子背向繞射 39

4-2石墨烯成長之分析 43

4-2-1 製程溫度 43

4-2-2 氫氣流量 44

4-2-3 單晶銅成長石墨烯 46

4-3石墨烯導電膜之可撓度分析 51

4-3-1 不同曲率電性量測 52

4-2-2 吸附摻雜電性量測 54

4-3-2 可靠度測試 56

第五章結論與未來工作 58

參考文獻 59

參考文獻

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指導教授

郭倩丞、陳昇暉(Chien-Cheng Kuo Sheng-Hui Chen)

審核日期

2015-8-31

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