以膠體微影技術應用於開孔電極垂直式有機電晶體之研究

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姓名

賴怡蒨(Yi-Chien Lai) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

以膠體微影技術應用於開孔電極垂直式有機電晶體之研究
(Application of Colloidal Lithography on Patterned Electrode Vertical Organic Transistors)

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摘要(中)

本論文應用膠體微影技術於垂直有機電晶體中的開孔式源極，並研究垂直電晶體電流特性。對於垂直電晶體的開/關能力而言，源極的奈米孔洞結構與源極功函數/有機半導體的蕭特基能障為重要兩關鍵。利用膠體微影技術可獲得大面積(cm2)、高均勻性的單層奈米球膜，且製作出高密度和高均勻性的孔洞覆蓋率開孔源極。此外選擇高功函數之金和銀作為源極金屬，以及N型小分子有機半導體碳六十(C60)作為垂直電晶體之主動層，研究開孔源極的孔洞覆蓋率、金屬功函數對於垂直電晶體電性表現之影響。實驗結果發現，30 %孔洞覆蓋率可觀察到明顯的開/關表現，及藉由以全氟癸烷硫醇(PFDT)自組性單分子層修飾銀源極功函數來有效提升銀源極與C60間的蕭特基能障，相較於未經修飾的銀源極，可進一步壓抑關電流密度高達三個數量級。整體而言，經由優化銀源極的孔洞覆蓋率與功函數並鍍製適當厚度的C60主動層，其垂直電晶體的開/關比接近104和開電流密度可達1~10 mA/cm2，此電性表現在未來可進一步與OLED整合並應用於顯示器中。

摘要(英)

This thesis investigates the application of colloidal lithography technique on patterned source electrode of vertical organic transistor and characterizes the devices electrical properties. For the on/off ability of vertical transistor, nanopatterned structure of source electrode and the Schottky barrier of source electrode/organics interface are two important factors. Large area (cm2) and high uniformity of nanosphere monolayer is obtained by utilizing the colloidal lithography method. Also, the high density and uniform hole surface coverage patterned electrode is demonstrated. The vertical transistor fabricated with high work function source electrode (Ag and Au) and N-type C60 small molecules semiconductor. We correlate the vertical transistor electrical performance with the hole surface coverage and the work function of patterned source electrode. From results of experiments, the transistor on/off performance with 30% hole surface coverage of source electrode is clearly observable. And, the Ag/C60 Schottky barrier is effectively increased by modifying Ag source electrode work function with PFDT self-assembled monolayer, which shows that the off current density of Ag/PFDT-source transistor can be a factor of 103 lower than Ag-source transistor. In summary, with optimized hole surface coverage, modified Ag source electrode work function, and sufficiently thick C60 active layer, the vertical transistor with on/off ratio of nearly 104 and the on current density of 1-10 mA/cm2 are demonstrated, which is promising for applications of OLED display technology in the future.

關鍵字(中)

★ 垂直式有機電晶體
★ 開孔電極

關鍵字(英)

★ vertical organic transistors
★ patterned electrode

論文目次

摘要 v
Abstract vi
誌謝 vii
目錄 viii
圖表目錄 x
第一章緒論 1
1.1前言 1
1.1.1傳統有機薄膜電晶體 3
1.1.2蕭特基基底之垂直式電晶體 5
1.1.3研究動機與目的 9
第二章基本理論 11
2.1奈米球成長機制-奈米開孔遮罩 11
2.1.1六方最密排列奈米球遮罩 12
2.1.2無序排列奈米球遮罩 14
2.2垂直有機電晶體操作機制-蕭特基電晶體[42] 17
2.2.1關狀態操作機制 19
2.2.2開狀態操作機制 22
2.2.3轉換特性曲線及開/關比 26
第三章實驗方法與架構 27
3.1 元件結構介紹 27
3.1.1主動層材料 27
3.1.2垂直電晶體元件能階設計 29
3.1.3自組性硫醇分子修飾銀源極 30
3.2 實驗方法與製備 33
3.2.1垂直式有機電晶體之製備 33
3.2.2實驗儀器 37
第四章結果與討論 41
4.1垂直式有機電晶體之開孔源極 41
4.1.1 單層聚苯乙烯奈米球膜成長結果 42
4.1.2 奈米級開孔源極 45
4.1.3 奈米級開孔源極結構之總結 48
4.2 垂直式有機電晶體之電性探討 49
4.2.1孔洞覆蓋率與銀源極垂直電晶體 50
4.2.2源極金屬功函數與垂直電晶體 53
4.2.3以硫醇分子修飾銀源極金屬功函數 56
4.2.4 垂直式有機場效電晶體之電性總結 65
第五章結論與未來展望 67
參考文獻 69

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指導教授

張瑞芬(Jui-Fen Chang)

審核日期

2015-9-24

推文