高穿透類鑽碳膜之研究

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姓名

張洪銘(Hung-Ming Chang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

高穿透類鑽碳膜之研究
(Research of Transparent Diamond Like Carbon films)

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摘要(中)

類鑽膜為鑽石結構sp3鍵結與石墨結構sp2鍵結的非晶(Amorphous)碳膜，具有絕佳的機械性質可做為保護膜。但因內應力過大與穿透率不佳，使其在應用上受到侷限。而類鑽膜的摻雜改善了上述缺點，使類鑽膜更利於被使用。
常見的類鑽膜製程為電漿輔助化學氣相沉積法(PECVD)，而本實驗與一般的PECVD架構不同，稱此系統為射頻磁控電漿輔助化學氣相沉積法，可獨立控制電漿功率與負偏壓大小。在此實驗中，利用Raman和FTIR量測分析與驗證類鑽薄膜特性，再利用XPS輔助佐證實驗結果。甲烷與六甲基二矽氧烷作為反應氣體，利用射頻磁控電漿輔助化學氣相沉積法摻雜SiOx於類鑽膜，透過改變六甲基二矽氧烷的流量控制矽氧化合物在膜中的含量，特別是透過SiOx的摻雜。實驗以負偏壓大小為200 V，電漿功率為140 W，HMDSO流量為0.2 sccm下，所鍍製出的類鑽薄膜具有88 %的穿透率，硬度值達12.9 Gpa，其厚度約100 nm。

摘要(英)

Diamond like carbon (DLC) films which was consisted of sp3 diamond bonding and sp2 graphite is an amorphous carbon films. It has excellent mechanical property and was used as protective coating. DLC films have high intrinsic compressive stress and low transparency, so it limits its application. Doping of DLC films improved its disadvantage, so it can be used widely.
The common process is plasma enhanced chemical vapor deposition (PECVD), but there are some differences in our setup. This setup was called radio frequency magnetron plasma enhanced chemical vapor deposition. It can control plasma power and DC bias independently. We use Raman and FTIR spectrometer to analyze and prove properties of diamond like carbon films in the experiment. XPS measurement assists in evidencing experiment result. DLC films with an addition of SiOx were deposited in radio frequency magnetron plasma enhanced chemical vapor deposition from a mixture of methane and hexamethyldisiloxane (HMDSO). The flow rate of HMDSO was changed in order to vary the SiOx content in the films, particularly doping SiOx in DLC films. 200 V negative self bias, 100 W RF power and 0.2 sccm HMDSO were applied to deposit DLC films with transparency up to 88 % and hardness up to 12.9 Gpa. The thickness of films is about 100 nm.

關鍵字(中)

★ 類鑽膜

關鍵字(英)

★ DLC
★ HMDSO

論文目次

摘要 I
ABSTRACT II
致謝 III
目錄 IV
圖目錄 VI
表目錄 IX
第一章緒論 1
1-1 引言 1
1-2 研究動機 3
第二章基礎理論 5
2-1 類鑽膜的結構與分類 5
2-2 類鑽膜的成長機制 7
2-3 電漿基本原理 9
2-4 電漿輔助化學氣相沉積法 10
2-5 電漿聚合 10
2-6 奈米壓痕 12
第三章實驗架設與量測儀器 15
3-1 實驗流程 15
3-2 實驗介紹與步驟 15
3-3 量測儀器介紹 19
第四章實驗結果與討論 28
4-1 負偏壓對於類鑽膜的影響 28
4-2 電漿功率對系統的影響 37
4-3 摻雜HMDSO於類鑽膜中的影響 41
4-4 討論膜層厚度的影響 49
第五章結論 56
參考文獻 57

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指導教授

郭倩丞、陳彥宏(Chien-Cheng Kuo Yen-Hung Chen)

審核日期

2015-9-30

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