博碩士論文 102256007 詳細資訊




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姓名 吳國偉(Kuo-Wei Wu)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 藉由IGZO成膜設備提升a-IGZO TFT薄膜電晶體電性穩定性
(Improvement of electrical stability of a-IGZO Thin Film Transistor by the deposit equipment of IGZO)
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摘要(中) 本論文主要以(Amorphous silicon, a-Si)非晶矽TFT LCD技術及製程設備背景下,藉由半導體材料a-Si變更為Metal Oxide,也就是本篇論文所使用之材料IGZO (Indium Gallium Zinc Oxide為氧化銦鎵鋅的縮寫)來取代原使用之半導體材料,新材料可提供半導體更佳的電子遷移率、高電流開關比,但新材料易受製程中氧分佈不均勻影響,造成電性上穩定性不佳進而影響面板顯示的品質,本論文藉由新材料IGZO鍍膜機台(物理氣相沉積)進行各項參數實驗,最後經提供氧氣之管路改造,使氧氣於鍍膜時均勻分佈於腔體內,經由實驗得到較佳的電性均一性。
由實驗結果將氧氣流量管路改造後,原先單一68*88cm大基板上9點IV Curve均一性表現分散,改善前關鍵指標臨界電壓差ΔVth大於5V,對策改善後臨界電壓差ΔVth電性變化量可小於2V,除均一性得到顯著改善也驗證氧流量分布對於元件開關特性影響的重要性,並且得到較佳面板顯示品質。
摘要(英) In this thesis, our background is mainly in (Amorphous silicon) a-Si TFT LCD technology and base in it’s manufacturing equipment, We change semiconductor material a-Si to Metal Oxide. In this paper, we used IGZO (Abbreviation: Indium Gallium Zinc Oxide ) to replace the original semiconductor material of a-Si, new semiconductor material that offers better electron mobility, high current switching ratio, but in the manufacturing process, new materials susceptible by uneven distribution of oxygen, causing poor electrical stability ,thereby affecting the quality of the display, so we experimented and adjusted the parameters of the IGZO coating machine of PVD(Abbreviation: Physical Vapor Deposition). Finally, we transform pipeline of supplying oxygen, the oxygen gas in the chamber can be evenly distributed. We gain better electrical uniformity by final experiment.
After we transformed oxygen pipeline, the results of electrical characteristic of IV curve which is on the large substrate(68*88cm) of 9 point is uniform. The key indicators is ΔVth(Abbreviation: Threshold Voltage). Before improvement, ΔVth greater than 5V, after improvement ΔVth may be less than 2V. In addition we obtain uniformity, we also lighting the panel and get better quality.
關鍵字(中) ★ 非晶矽
★ 氧化銦鎵鋅
★ 氧氣管路
★ 物理氣相沉積
★ 臨界電壓
關鍵字(英) ★ Amorphous silicon
★ Indium Gallium Zinc Oxide
★ O2 pipeline
★ Physical Vapor Deposition
★ Threshold Voltage
論文目次 中文摘要........................................ I
英文摘要........................................ II
致謝............................................ III
目錄............................................ IV
圖目錄.......................................... VII
表目錄.......................................... X
第一章 緒論..................................... 1
1.1 研究動機與目的............................... 1
1.2 研究目的.................................... 3
第二章 a-Si與Oxide TFT技術探討................... 6
2.1 a-Si TFT技術............................... 6
2.1.1 TFT起源.................................. 6
2.1.2 a-Si材料說明............................. 8
2.1.3 a-Si TFT簡介............................. 10
2.1.4 TFT LCD結構介紹.......................... 12
2.1.5 TFT 驅動電壓方式.......................... 14
2.1.6 a-Si TFT製程流程......................... 17
2.2 IGZO TFT技術............................... 22
2.2.1 IGZO起源與材料介紹......................... 22
2.2.2 Oxide TFT 製程及結構介紹................... 25
2.2.3 現況ESL of IGZO TFT電性能力說明............ 28
第三章 製程及量測設備與實驗流程說明.....................31
3.1 製程設備介紹.....................................31
3.1.1 IGZO濺鍍設備介紹..............................31
3.1.2 陰極濺鍍原理...................................34
3.1.3 鍍膜設備機構說明................................36
3.2 量測設備檢測方式..................................37
3.2.1量測電壓設定....................................37
3.2.2量測值定義......................................38
3.2.3量測位置.......................................40
3.3 實驗流程.........................................41
第四章 結果與討論.....................................42
4.1 O2流量調整:......................................43
4.1.1 O2/Ar流量比6%..................................43
4.1.2 O2/Ar流量比10%.................................44
4.1.3 O2/Ar流量比15%.................................45
4.1.4 O2/Ar流量比調整結論.............................46
4.2 磁石Power調整:....................................47
4.2.1磁石Power調整4.3/3.5/3.5/4.3.....................47
4.2.2磁石Power調整5.4/4.4/4.4/5.4.....................48
4.2.3磁石Power調整8.6/7.0/7.0/8.6.....................49
4.2.4磁石Power調整結論.................................50
4.3 Mask Gap調整:.....................................50
4.3.1 Mask Gap調整1.3mm...............................51
4.3.2 Mask Gap調整4mm.................................52
4.3.3 Mask Gap調整結論.................................52
4.4 O2管路改造........................................53
第五章 結論與未來展望....................................57
5.1結論................................................57
5.2未來展望............................................58
參考文獻...............................................60
參考文獻 [1]網路資料on line resources︰http://www.pida.org.tw/optolink/optolink_pdf/1020710624.pdf
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指導教授 張榮森(Rong-Seng Chang) 審核日期 2016-7-27
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