博碩士論文 102323063 詳細資訊




以作者查詢圖書館館藏 以作者查詢臺灣博碩士 以作者查詢全國書目 勘誤回報 、線上人數:9 、訪客IP:18.232.127.73
姓名 房子陽(Zih-Yang Fang)  查詢紙本館藏   畢業系所 機械工程學系
論文名稱 MOCVD創新進氣系統設計模擬分析
相關論文
★ 筆記型電腦改良型自然對流散熱設計★ 移動式顆粒床過濾器濾餅流場與過濾性能之研究
★ IP67防水平板電腦設計研究★ 汽車多媒體導航裝置散熱最佳化研究
★ 流動式顆粒床過濾器三維流場觀察及能性能測試★ 流動式顆粒床過濾器冷性能測試
★ 流動式顆粒床過濾器過濾機制研究★ 二維流動式顆粒床過濾器內部配置設計研究
★ 循環式顆粒床過濾器過濾性能研究★ 流動式顆粒床過濾器之流場型態設計與研究
★ 流動式顆粒床過濾器之流動校正單元設計與分析研究★ 流動式顆粒床過濾器之雙葉片型流動校正單元設計與冷性能過濾機制研究
★ 稻稈固態衍生燃料成型性分析之研究★ 流動式顆粒床過濾器之不對稱葉片設計與冷性能過濾機制研究
★ 流動式顆粒床過濾器之滾筒式粉塵分離系統與冷性能過濾及破碎效應研究★ 稻稈固態衍生燃料加入添加物成型性分析之研究
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   至系統瀏覽論文 ( 永不開放)
摘要(中) 有機金屬化學氣相沉積法(Metal–Organic Chemical Vapor Deposition, MOCVD)為目前製作LED最重要的技術之一,各家廠商使用不同的進氣方式與腔體設計使得腔體中可以有均勻的熱流場,形成良好的薄膜成長情形。本研究採用COMSOL模擬軟體進行分析與設計,研究內容主要分為兩個部分,第一個部分為改善Veeco垂直式的進氣腔體中氣體利用率不佳的問題,透過三角導流板(triangular barrier)與水平出氣口的設計提升載盤上的平均薄膜成長速率、均勻性以及均勻面積,使得Veeco腔體可以有更佳的氣體利用率。第二部分為改善Aixtron水平式進氣腔體中自旋機構因顆粒堆積造成穩定性不足需要停機維修的情形,透過H2 / TMG進氣口檔板、斜面邊壁設計以及弧面邊壁設計,使得Aixtron腔體在不需自旋機構的情況下,可以擁有好的平均薄膜成長速率、均勻性以及較大均勻面積。
摘要(英) Metal–Organic Chemical Vapor Deposition, MOCVD, is one of the most important technologies to manufacture the LED. There are different methods to get uniform thermal-flow field providing good conditions of thin film deposition in different manufacturer. In this study, the numerical method was applied to analyze and design the MOCVD system. In first part, the new design of triangular barrier and horizontal outlet which can enhance the average growth rate, uniformity, and uniform region on the susceptor to improve the problem of the low gas-usage in Veeco system are proposed. In the second part, the new design of the barrier in the group Ⅲ inlet, incline wall and curve wall are proposed to obtain uniform thin film deposition without the wafer spin.
關鍵字(中) ★ 化學氣相沉積
★ 進氣設計
★ 數值模擬
關鍵字(英) ★ MOCVD reactor
★ simulation
★ inlet design
論文目次 目錄
摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 XI
符號說明 XII
一、 緒論 1
1.1 前言 1
1.2 MOCVD反應腔體介紹 2
1.3 文獻回顧 4
1.4 研究動機與內容 7
二、 基礎理論 8
2.1 腔體熱流場理論 8
2.1.1 熱質傳偶合效應 8
2.1.2 熱流場穩定理論 8
2.2 薄膜沉積理論 10
2.2.1 氣體傳輸機制 10
2.2.2 薄膜反應機制 10
2.3 數值模擬方法 11
2.3.1 統御方程式 11
2.3.2 基本假設與邊界條件 13
2.4 混合氣體的物理性質 16
2.5 數值模擬流程 18
2.6 薄膜成長速率計算 19
2.7 網格獨立分析 21
三、 結果與討論 24
3.1 垂直式進氣腔體參數分析與創新進氣設計 25
3.1.1. 載台轉速對於垂直式進氣腔體之影響 25
3.1.2. 三角導流板設計於垂直式進氣腔體之影響 31
3.1.3. 三角導流板設計於垂直式進氣腔體中不同位置之影響 38
3.1.4. 三角導流板寬度設計於垂直式進氣腔體之影響 45
3.1.5. 水平出氣口設計於垂直式進氣腔體之影響 52
3.1.6. 擴大載盤半徑設計於垂直式進氣腔體之影響 59
3.1.7. 擴大載盤半徑最佳化設計於不同轉速與進氣流率的影響 64
3.1.8. 小結 68
3.2. 水平式進氣腔體創新進氣設計 69
3.2.1. H2 / TMG進氣口檔板於水平式進氣腔體之影響 69
3.2.2. 斜面邊壁設計於水平式進氣腔體之影響 76
3.2.3. 弧面邊壁設計於水平式進氣腔體之影響 84
3.2.4. 小結 91
四、 結論 92
參考文獻 94
參考文獻 [1]C. J. Pinzone, Crystalgrower at en.wikipedia, 2006
[2]H. Liu, “Slab cross flow CVD reactor”, US Patent No. 8,216,375 B2, Jul. 10, 2012.
[3]B. Mitrovic, A. Gurary, L. Kadinski, “On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters”, Journal of Crystal Growth, Vol. 287, pp. 656-663, 2006.
[4]D.W. Weyburne, B.S. Ahem, “Design and operating considerations for a water-cooled close-spaced reactant injector in a production scale MOCVD reactor”, Journal of Crystal Growth, Vol. 170, pp. 77-82, 1997.
[5]C.Y. Soong, C.H Chyuan, R.Y Tzong, “Thermo-flow structure and epitaxial uniformity in large-scale metalorganic chemical vapor deposition reactors with rotating susceptor and inlet flow control”, Japanese Journal of applied Physics, Vol.37, pp. 5823-5834, 1998.
[6]C. Park, J.Y. Hwang, M. Huang, T.J. Anderson, “Investigation of an upflow cold-wall CVD reactor by gas phase Raman spectroscopy”, Thin Solid Films, Vol. 409, pp. 88-97, 2002.
[7]C.Y Shin, B.J. Baek, C.R. Lee, B Pak, J.M. Yoon, K.S. Park, “Numerical analysis for the growth of GaN layer in MOCVD reactor”, Journal of Crystal Growth, Vol. 247,pp. 301–312, 2003
[8]R. Zuo, H. Zhang, X. Liu, “Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets”, Journal of Crystal Growth, Vol. 293, pp. 498-508, 2006.
[9]R. Zuo, Q. Xu, H. Zhang, “An inverse-flow showerhead MOVPE reactor design”, Journal of Crystal Growth, Vol. .298, pp. 425-427, 2007.
[10]C.H. Lin, W.T. Cheng, J.H. Lee, “Effect of embedding a porous medium on the deposition rate in a vertical rotating MOCVD reactor based on CFD modeling”, International Communications in Heat and Mass Transfer, Vol. 36,pp. 680-685, 2009.
[11]C.S. Kim, J. Hong, J. Shim , Y.S. Won, and Y.I. Kwon, “Multiphysics modeling and Design of ultralarge multiwafer MOVPE Reactor for Group III-Nitride Light Emitting Diodes”, EuroSimE , 11th, 2010.
[12]W.K. Cho, D.H. Choi , “Optimization of a horizontal MOCVD reactor for uniform epitaxial layer growth ”, Journal of Heat and Mass Transfer, Vol. 43, pp. 1851-1858, 2000.
[13]H. Hardtdegen, A. Kaluza, D. Gauer, M.V.D. Ahe, M. Grimn, P. Kaufmann, L. Kadinski, “On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor”, Journal of Crystal Growth, Vol. 223, pp. 15–10, 2001.
[14]C.Y. Shin, B.J. Baek, C.R. Lee, B. Pak, J.M. Yoon, K.S. Park, “Numerical analysis for the growth of GaN layer in MOCVD”, Journal of Crystal Growth, Vol. 247, pp. 301-312, 2003.
[15]C. Martin, M. Dauelsberg, H. Protzmann, A.R. Boyd, E.J. Thrush, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A.V. Kondratyev, “Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor”, Journal of Crystal Growth, Vol. 303, pp. 318-322, 2007.
[16]L. Yang, Z. Chen, J. Zhang, A.G. Li, “Transport phenomena in a novel large MOCVD reactor for epitaxial growth of GaN thin films”, IEEE Transactions on Semiconduction Manufacture, Vol. 25, NO. 1, 2012.
[17]D.I. Fotiaidis, A.M. Kremer, D.R. Mckkana and K.F. Jensen, “Complex flow phenomena in vertical MOCVD reactors: effects on deposition uniformity and interface abruptness”, Journal of Crystal Growth, Vol. 85, pp. 154-164, 1987.
[18]T.C. Cheng, P.H. Chiou, T.F. Lin, “Visualization of mixed convective vortex rolls in an impinging jet flow of air through a cylindrical chamber”, International Journal of Heat and Mass Transfer, Vol. 45,pp. 3357-3368, 2002.
[19]J.C. Hsieh, C.W. Cheng, T.F. Lin, “Suppression of buoyancy-driven vortex flow resulting from a low speed jet impinging onto a heated disk in a vertical cylinder by cylinder top tilting”, International Journal of Heat and Mass Transfer, Vol. 47,pp. 3031-3045, 2004.
[20]Y.H. Liu, L.W. Tseng, C.Y. Huang, K.L. Lin, C.C. Chen, “Particle image velocimetry measurement of jet impingement in a cylindrical chamber with a heated rotating disk”, International Journal of Heat and Mass Transfer, Vol. 65, pp. 339-347, 2013.
[21]W.K. Cho, D.H. Choi, M.U. Kim, “Optimization of the inlet velocity profile for uniform epitaxial growth in a vertical metalorganic chemical vapor deposition reactor”, International Journal of Heat and Mass Transfer, Vol. 42, pp. 4143-4152, 1999.
[22]莊子慶,「MOCVD腔體熱流場與新式進氣檔板之設計模擬分析研究」,國立中央大學,碩士論文,民國一O二年。
[23]林宜正,「化學氣相沉積之噴頭性能模擬分析」,國立中山大學,碩士論文,民國九十二年。
[24]陳燕,「MOCVD反應器內部氣體流動過程的研究」,中國江蘇大學,碩士論文,2005
[25]林雋幃, 「創新進氣擴散系統設計開發-檔板與垂直噴流設計於水平式腔體」,國立中央大學,碩士論文,民國一O三年。
指導教授 蕭述三(Shu-San Hsiau) 審核日期 2015-7-15
推文 facebook   plurk   twitter   funp   google   live   udn   HD   myshare   reddit   netvibes   friend   youpush   delicious   baidu   
網路書籤 Google bookmarks   del.icio.us   hemidemi   myshare   

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明