MOCVD創新進氣系統設計模擬分析

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姓名

房子陽(Zih-Yang Fang) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

MOCVD創新進氣系統設計模擬分析

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摘要(中)

有機金屬化學氣相沉積法（Metal–Organic Chemical Vapor Deposition, MOCVD）為目前製作LED最重要的技術之一，各家廠商使用不同的進氣方式與腔體設計使得腔體中可以有均勻的熱流場，形成良好的薄膜成長情形。本研究採用COMSOL模擬軟體進行分析與設計，研究內容主要分為兩個部分，第一個部分為改善Veeco垂直式的進氣腔體中氣體利用率不佳的問題，透過三角導流板(triangular barrier)與水平出氣口的設計提升載盤上的平均薄膜成長速率、均勻性以及均勻面積，使得Veeco腔體可以有更佳的氣體利用率。第二部分為改善Aixtron水平式進氣腔體中自旋機構因顆粒堆積造成穩定性不足需要停機維修的情形，透過H2 / TMG進氣口檔板、斜面邊壁設計以及弧面邊壁設計，使得Aixtron腔體在不需自旋機構的情況下，可以擁有好的平均薄膜成長速率、均勻性以及較大均勻面積。

摘要(英)

Metal–Organic Chemical Vapor Deposition, MOCVD, is one of the most important technologies to manufacture the LED. There are different methods to get uniform thermal-flow field providing good conditions of thin film deposition in different manufacturer. In this study, the numerical method was applied to analyze and design the MOCVD system. In first part, the new design of triangular barrier and horizontal outlet which can enhance the average growth rate, uniformity, and uniform region on the susceptor to improve the problem of the low gas-usage in Veeco system are proposed. In the second part, the new design of the barrier in the group Ⅲ inlet, incline wall and curve wall are proposed to obtain uniform thin film deposition without the wafer spin.

關鍵字(中)

★ 化學氣相沉積
★ 進氣設計
★ 數值模擬

關鍵字(英)

★ MOCVD reactor
★ simulation
★ inlet design

論文目次

目錄
摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 XI
符號說明 XII
一、緒論 1
1.1 前言 1
1.2 MOCVD反應腔體介紹 2
1.3 文獻回顧 4
1.4 研究動機與內容 7
二、基礎理論 8
2.1 腔體熱流場理論 8
2.1.1 熱質傳偶合效應 8
2.1.2 熱流場穩定理論 8
2.2 薄膜沉積理論 10
2.2.1 氣體傳輸機制 10
2.2.2 薄膜反應機制 10
2.3 數值模擬方法 11
2.3.1 統御方程式 11
2.3.2 基本假設與邊界條件 13
2.4 混合氣體的物理性質 16
2.5 數值模擬流程 18
2.6 薄膜成長速率計算 19
2.7 網格獨立分析 21
三、結果與討論 24
3.1 垂直式進氣腔體參數分析與創新進氣設計 25
3.1.1. 載台轉速對於垂直式進氣腔體之影響 25
3.1.2. 三角導流板設計於垂直式進氣腔體之影響 31
3.1.3. 三角導流板設計於垂直式進氣腔體中不同位置之影響 38
3.1.4. 三角導流板寬度設計於垂直式進氣腔體之影響 45
3.1.5. 水平出氣口設計於垂直式進氣腔體之影響 52
3.1.6. 擴大載盤半徑設計於垂直式進氣腔體之影響 59
3.1.7. 擴大載盤半徑最佳化設計於不同轉速與進氣流率的影響 64
3.1.8. 小結 68
3.2. 水平式進氣腔體創新進氣設計 69
3.2.1. H2 / TMG進氣口檔板於水平式進氣腔體之影響 69
3.2.2. 斜面邊壁設計於水平式進氣腔體之影響 76
3.2.3. 弧面邊壁設計於水平式進氣腔體之影響 84
3.2.4. 小結 91
四、結論 92
參考文獻 94

參考文獻

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指導教授

蕭述三(Shu-San Hsiau)

審核日期

2015-7-15

推文