博碩士論文 102324601 詳細資訊




以作者查詢圖書館館藏 以作者查詢臺灣博碩士 以作者查詢全國書目 勘誤回報 、線上人數:7 、訪客IP:3.93.75.30
姓名 馮喆(Zhe Feng)  查詢紙本館藏   畢業系所 化學工程與材料工程學系
論文名稱 尖針狀矽晶奈米線陣列及凖直鐵矽化物奈米結構之製備與性質研究
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摘要(中) 本研究大致可以分為兩大部分:第一部分為觀察在金屬催化無電鍍銀循環蝕刻下矽晶奈米線尖針化的演化趨勢並描述反應機制,同時測量其場發射效應;第二部分為研究在高溫下鐵金屬薄膜與矽晶奈米線之矽化反應。

本實驗利用聚苯乙烯奈米球模板結合金屬催化化學蝕刻法在Si(110)矽晶基材上製備大面積準直規則有序排列之矽晶奈米線陣列,然後在金屬催化無電鍍銀循環蝕刻下修飾矽晶奈米線成尖針狀結構,接著藉由SEM、TEM以及水滴接觸角量測觀察矽晶奈米線尖針化的演化趨勢並描述其反應機制,最後測量並探討循環蝕刻0次、2次以及4次矽晶奈米線之場發射效應。

本實驗藉由電子槍熱蒸鍍系統在規則有序排列之矽晶奈米線陣列模板傾角鍍制一層20 nm鐵薄膜,並在高溫爐管下進行退火反應。利用SEM、TEM以及EDS觀察研究在900 oC下鐵金屬薄膜與矽晶奈米線介面處的矽化反應及擴散機制,並利用固-液-固機制解釋在1000 oC下矽晶奈米線表面生成奈米細線的現象。

摘要(英) There are two parts in this study. The first part is observation the sharped trends and discused the etching mechanism of silicon nanowires by cycle metal-assisted eletroless chemical etching, and then measured the field emission property of silicon nanowires after different etching times. And the second part is discussing the diffusion reaction of iron film and Silicon nanowire during different temperature.

In this study, we applied polystyrene nanosphere template and metal-assisted chemical etching to fabricate of large area single-crystalline silicon nanowires array on silicon (110) substrate, then modified the silicon nanowires to sharp the structure by cycle metal-assisted eletroless chemical etching. We observed and discussed the sharped trends and the etching mechanism by SEM、TEM and contact angle analysis. At last we measured the field emission property of silicon nanowires during various treatments.

In this work, we deposited iron for 20 nm on silicon nanowires array by lateral deposition, then treated it by high temperature to form metal silicide nanoparticles on silicon nanowires. We applied SEM、TEM and EDS to discussing the diffusion reaction of iron film and silicon nanowires and quantitative analysis during 900 oC and 1000 oC. We gave an explanation of growing small nanowires from the surface of silicon nanowire at 1000 oC by Solid-Liquid-Solid mechanism.

關鍵字(中) ★ 矽晶奈米線
★ 場發射效應
★ 金屬催化無電鍍
★ 固-液-固機制
★ 尖針狀
★ 矽化物
關鍵字(英)
論文目次 摘要 i

Abstract ii

致谢 iii

目录 iv

第一章 前言及文獻回顧 1

1-1前言 1

1-2矽單晶奈米線製備方法 4

1-2-1矽單晶奈米線應用 4

1-2-2矽單晶奈米線成長機制及優缺點 5

1-2-3金屬催化化學蝕刻法製備矽單晶奈米線陣列 7

1-3奈米球微影技術 9

1-3-1奈米球的自組裝行為 9

1-3-2奈米球微影技術結合金屬催化化學蝕刻法製備單晶矽奈米柱陣列 10

1-3-3金屬催化無電鍍銀蝕刻矽晶奈米線 10

1-4親疏水性質及相關理論 11

1-5場發射元件 12

1-5-1場發射相關理論 12

1-5-2矽晶基材的場發射效應研究 14

1-6鐵矽化物 15

1-6-1金屬矽化物的製備與應用 15

1-6-2薄膜鐵金屬矽化物 18

1-6-3鐵金屬矽化物奈米線 19

1-7研究動機及目標 21

第二章 實驗步驟及儀器設備 23

2-1實驗步驟 23

2-1-1矽晶基材使用前處理 23

2-1-2奈米球陣列模板製備 23

2-1-3氧電漿蝕刻調變奈米球模板的尺寸 24

2-1-4蒸鍍金薄膜 24

2-1-5金屬催化化學蝕刻製備矽單晶奈米線陣列 24

2-1-6金屬催化無電鍍蝕刻法修飾矽單晶奈米線 25

2-1-7熱氧化法修飾矽單晶奈米線之線寬 25

2-1-8凖直鐵矽化物奈米線陣列之製備 26

2-2試片分析 26

2-2-1掃描式電子顯微鏡 26

2-2-2穿透式電子顯微鏡 27

2-2-3高解析穿透式電子顯微鏡 27

2-2-4 X光能量散佈光譜儀 28

2-2-5拉曼光譜分析 28

2-2-6 XRD圖譜分析 29

2-2-7場發射性質測量 29

2-2-8水滴接觸角測量儀 30

第三章 結果與討論 31

3-1製備奈米球模板 31

3-1-1製備單層聚苯乙烯奈米球模板 31

3-1-2氧電漿蝕刻調控單層聚苯乙烯奈米球模板 31

3-1-3製備矽單晶奈米線陣列 32

3-1-4以熱氧化法調控矽單晶奈米線尺寸 33

3-2以金屬催化無電鍍方法製備尖針狀矽單晶奈米線 34

3-3尖針化之矽晶奈米線的水滴接觸角變化 36

3-4尖針狀矽晶奈米線之場發射性質測量與探討 38

3-5製備鐵矽化物奈米線陣列及其性質測量 42

第四章 結論與未來展望 48

第五章 參考文獻 50

圖目錄 64

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指導教授 鄭紹良(Shao-Liang Cheng) 審核日期 2015-8-26
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