本質/磷摻雜氫化非晶矽(a-Si:H)堆疊結構應用於背表面電場光電特性與鈍化品質之關聯探討

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呂佳承(Chia-Cheng Lu) 查詢紙本館藏

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論文名稱

本質/磷摻雜氫化非晶矽(a-Si:H)堆疊結構應用於背表面電場光電特性與鈍化品質之關聯探討

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摘要(中)

本研究利用射頻電漿輔助化學氣相沉積(Radio-frequency plasma enhanced chemical vapor deposition, RF-PECVD)製備本質與磷化氫摻雜氫化非晶矽(a-Si:H)薄膜堆疊結構，射頻電漿輔助化學氣相沉積為產業廣泛使用之設備，學理發展完整、設備技術純熟，其特性為沉積速率較緩慢；能沉積高緻密性薄膜，故適合應用於嚴格要求低薄膜厚度與高薄膜品質之異質接面太陽能電池(Heterojunction with intrinsic thin layer solar cell, HIT)的結構中。本實驗以RF-PECVD引入矽甲烷(SiH4)、氫氣(H2)、磷化氫(PH3)與氬氣(Ar)製備本質堆疊磷摻雜氫化非晶矽薄膜，實驗規劃調變射頻功率(RF power)、氫稀釋比例(Hydrogen dilution ratio)、基板溫度(Substrate temperature)、電極間距(Electrode distance)、製程壓力(Pressure)、磷化氫氣體流量(PH3 Flow)等製程參數對a-Si:H薄膜特性影響，並且使用四點探針薄膜電阻量測儀(Four point sheet resistance meter) 、霍爾效應分析儀(Hall)、橢圓偏光儀(Ellipsometer)、二次離子質譜儀(Secondary ion mass spectrometer, SIMS)量測薄膜結構與電特性、穿透式電子顯微鏡(Transmission electron microscopy, TEM)觀察薄膜接面平滑度與鈍化品質之關係，最後以光電導生命週期量測儀 (Photoconductance lifetime tester)測量少數載子生命週期(Lifetime)與表面載子複合速率(SRV)結果得知鈍化品質優劣。未來期望應用於異質接面太陽能電池背表面電場上，以提升電池開路電壓與短路電流。
研究結果顯示，在調變參數的情形下，薄膜結晶率愈高則導電特性愈好，而磷摻雜氫化非晶矽薄膜中的磷原子雖然可以貢獻電子提升薄膜電特性，但是過多的磷原子相對會導致缺陷密度提升，不但不利於摻雜的活化更嚴重影響少數載子生命週期，故如何再生命週期與導電特性上取得平衡是相當重要的關鍵。
進行優化後的堆疊結構中不但提升本質層之鈍化效果，更能在太陽能電池池內建構一背電場提升短路電流，製備出之薄膜之摻雜濃度可大於1019且少數載子生命週期可大幅提高到1.8 msec以上。

摘要(英)

In this study, the intrinsic/phosphorus doping hydrogenated amorphous silicon (a-Si:H) double structure was optimized by the process conditions in which film growth of doped silicon as a back surface field (BSF) layer in a symmetric cell structure was prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). PF-PECVD had major advantages: (1) low operation temperature, (2) higher compactness of deposited layer, (3) good passivation properties of deposited layer, (4) good step coverage.
The process parameters effect of a-Si:H thin films such as radio-frequency power, hydrogen dilution ratio, substrate temperature, electrode distance, pressure, PH3 flow was investigated. The thin films physical and optical properties were analyzed by Four Point Sheet Resistance Meter, Hall, TEM, Ellipsometer, Photoconductance lifetime tester and Secondary Ion Mass Spectrometer. We determined the thin film quality by photo conductance lifetime tester. In addition, this double structural film will be applied to heterojunction with intrinsic thin layer (HIT) solar cells as a back surface field layer to improve the open-circuit voltage and short-circuit current of solar cells.
The results of experiments show that the excess phosphorus atoms in the films will increase the defect and degrade the electronic properties. Thus, the control of phosphorus content in the films is very important to obtain a high electronic properties. We achieved high quality of BSF on surface passivation, resulting lifetime up to 1.5ms and concentrations > 1019 in 4cm2 HIT solar cell.

關鍵字(中)

★ 氫化非晶矽
★ 磷摻雜
★ 太陽能電池
★ 堆疊結構

關鍵字(英)

★ HIT solar cell
★ doping
★ PECVD

論文目次

摘要 I
Abstract III
致謝 IV
目錄 V
圖目錄 VIII
表目錄 XIV
第一章緒論 1
1-1 前言 1
1-2 太陽能電池發展背景 3
1-3 研究動機及方法 5
1-4 論文架構 7
第二章基本理論及文獻回顧 8
2-1 太陽能電池基本原理 8
2-2化學氣相沉積(Chemical vapor deposition) 13
2-3 鈍化原理與機制 17
2-4薄膜沉積 19
2-4-1 薄膜沉積原理 19
2-4-2 非晶相轉換模型 21
2-4-3 氫化非晶矽薄膜介紹 24
2-5 載子生命週期復合機制 26
2-5-1輻射復合(Radiative/band to band recombination) 26
2-5-2歐傑復合(Auger recombination) 27
2-5-3夏克禮-里德-霍爾復合(Shockley-Read-Hall recombination) 28
2-5-4表面復合(Surface recombination) 29
2-6 文獻回顧 30
第三章研究方法與實驗設備 38
3-1 實驗方法 38
3-2 實驗步驟 40
3-2-1 試片基板清洗 40
3-2-2 試片製作 41
3-3 實驗裝置與量測 42
3-3-1射頻電漿輔助化學氣相沉積(Radio-frequency plasma enhanced chemical vapor deposition, RF-PECVD) 42
3-3-2橢圓偏光儀(Ellipsometer) 45
3-3-3霍爾量測(Hall) 47
3-3-4光電導生命週期量測儀(Photoconductance lifetime tester) 48
3-3-5二次離子質譜儀(Secondary Ion Mass Spectrometer, SIMS) 49
3-3-6光放射光譜儀(Optical emission spectroscopy, OES) 50
第四章實驗結果與討論 52
4-1 10nm磷摻雜矽薄膜特性優化 53
4-1-1磷化氫流量(Phosphorus flow) 53
4-1-2製程壓力(Pressure) 58
4-1-3射頻功率(Power) 62
4-1-4氫稀釋濃度(Dilution ratio) 67
4-1-5電極間距(Electrode distance) 71
4-1-6製程溫度(Temperature) 75
4-2 5nm本質層對於堆疊結構特性影響分析 78
4-2-1 5nm本質層氫稀釋濃度在高低壓力沉積之氫化非晶矽薄膜特性對於堆疊結構之影響 79
4-2-2 5nm本質層射頻功率在高低壓力沉積之氫化非晶矽薄膜特性對於堆疊結構之影響 86
4-3本質/磷摻雜(a-Si:H)堆疊結構應用於背表面電場特性分析 93
4-3-1堆疊結構以SIMS量測雜質總量 93
4-3-2堆疊結構場效鈍化效果分析 94
4-3-3 HIT太陽能電池背表面電場與矽晶圓界面缺陷 98
第五章結論與未來展望 103
參考文獻 107

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指導教授

利定東(Tomi T. Li)

審核日期

2015-5-11

推文