博碩士論文 102327017 詳細資訊




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姓名 王俊程(Chun-Cheng Wang)  查詢紙本館藏   畢業系所 光機電工程研究所
論文名稱 MOCVD晶圓表面溫度即時量測系統之開發
(Development of in-situ measurement system of wafer surface temperature in MOCVD process)
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摘要(中) 本論文在開發一套晶圓表面溫度即時量測系統。應用於薄膜製程時,即時監控晶圓表面溫度,有效提高製程品質。根據普朗克黑體輻射理論與克希荷夫定理,以發射率修正量測溫度值。實驗以一道雷射光垂直入射晶圓表面,反射光與熱輻射由光偵測器接收,使用鎖相放大技術將熱輻射訊號與反射光訊號分離,並藉由一個標準參考片取得反射光強與反射率之關係、獲得晶圓反射率,再依據克希荷夫定理推算出發射率;透過軟體計算,將所得之熱輻射訊號求解溫度,並以發射率補償量測之溫度值。
本研究量測矽基板以及藍寶石基板於近紅外光940nm之熱輻射訊號。並使用相同波長之雷射二極體量測基板的發射率,藉以修正量測之溫度。溫度量測範圍約於450℃以上時,系統能較穩定地量測到溫度。於低溫段約450℃的系統解析度約為6℃;於高溫段700℃以上時,系統量測解析度皆在0.1℃以內。
摘要(英) The purpose of this paper is to measure the wafer surface temperature during the Metal Organic Chemical Vapor Deposition (MOCVD) process. Measurement are based on Plank’s blackbody radiation theorem and Kirchhoff’s law. A function generator (FG) is used to modulate the laser diode (LD), so that the high-frequency modulated laser beam with a wavelength of 940 nm is normally incident on the wafer. The reflected laser beam and the thermal radiation from the wafer surface are received by a photo diode. Then, the total signals from the reflected laser light and thermal radiation are transmitted to a personal computer (PC) via a data acquisition card (DAQ). A lock-in amplifier is used to demodulate the amplitude of the reflected light signal, and particular algorithms are developed to compute the reflectance and the thermal radiation signal, and solve for the temperature. Moreover, the emissivity can be obtained from the reflectance based on Kirchhoff’s law, to compensate for the temperature.
The experimental results show that the resolution of the temperature at about 450℃ is 6℃, and the resolutions of temperature above 700℃ are within 0.1℃.
關鍵字(中) ★ 光學高溫計
★ MOCVD
★ 熱輻射
★ 反射率
★ 發射率
★ 即時量測
關鍵字(英) ★ pyrometer
★ MOCVD
★ thermal radiation
★ reflectance
★ emissivity
★ in-situ measurement
論文目次 摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 IX
符號說明 X
第一章 緒論 1
1-1 研究背景 1
1-2 文獻回顧 2
1-3 研究目的 8
1-4 論文架構 9
第二章 基礎理論與原理 10
2-1 熱輻射理論 10
2-1-1 黑體輻射 10
2-1-2 實際物體熱輻射 13
2-2 單波長溫度量測 15
2-2-1 維恩近似 15
2-2-2 單波長溫度量測公式 15
2-3 發射率校正溫度量測 17
2-3-1 發射率與反射率之關係 18
2-3-2 發射率校正溫度公式 19
2-4 鎖相放大器 20
2-5 小結 22
第三章 系統及架構 23
3-1 真空腔體 23
3-2 光學儀器及元件選用 26
3-3 量測系統及軟體介紹 28
3-3-1 量測頭系統組成 28
3-3-2 量測頭光路模擬 31
3-3-3 量測軟體之開發 33
3-4 熱輻射及發射率量測 34
3-4-1 反射光強振幅解調 34
3-4-2 反射光與熱輻射訊號分離方法 36
3-4-3 熱輻射訊號模擬 37
3-5 小結 38
第四章 實驗結果與討論 39
4-1 載盤溫度量測 39
4-1-1 量測架構介紹 39
4-1-2 載盤溫度量測 42
4-1-3 載盤熱輻射訊號 46
4-1-4 載盤量測穩定度 47
4-2 晶圓溫度量測 49
4-2-1 量測架構介紹 49
4-2-2 矽晶圓溫度量測 52
4-2-3 矽晶圓量測穩定度 55
4-2-4 藍寶石晶圓溫度量測 57
4-2-5 藍寶石晶圓量測穩定度 60
4-2-6 晶圓熱輻射訊號 62
4-3 實驗討論 63
4-4 小結 66
第五章 誤差分析 67
5-1 系統誤差 67
5-1-1 光二極體偏壓引進溫度量測誤差 67
5-1-2 斜向入射所引進之餘弦誤差 68
5-1-3 系統響應時間 69
5-2 隨機誤差 71
5-2-1 環境及機械震動 71
5-2-2 環境溫度 71
5-2-3 電子雜訊 72
5-3 小結 72
第六章 結論與未來展望 73
6-1 結論 73
6-2 未來展望 73
參考文獻 74
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指導教授 李朱育(Ju-Yi Lee) 審核日期 2015-8-5
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