電漿輔助低溫化學氣相沉積法直接成長石墨烯/金屬複合透明導電薄膜

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魏健桓(Chien-Huan Wei) 查詢紙本館藏

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論文名稱

電漿輔助低溫化學氣相沉積法直接成長石墨烯/金屬複合透明導電薄膜
(Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition)

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摘要(中)

石墨烯為近幾年備受矚目的材料之一，其擁有優異的電性、高穿透率及高導熱性，亦為可撓曲的透明導電薄膜，目前的研究皆希望取代傳統的透明導電膜如氧化鋅鋁(AZO)、氧化銦錫(ITO)等。由於石墨烯需在高溫環境以金屬催化合成，現有的光電產品皆無法承受其高溫製程(1000 ℃)，必須依靠轉印的方式來使用。本研究為了解決高溫製程與轉印步驟，提出直接成長石墨烯在光電產品的方式，先使用磁控濺鍍法鍍製超薄且高穿透率的金屬薄膜作為成長石墨烯的催化金屬，為了保持透明度，此金屬膜穿透率必須在80 %@550 nm以上(包含透明基板，如玻璃基板、石英基板、藍寶石基板等等)，厚度必須要在5奈米以下，再使用電漿輔助低溫化學氣相沉積法於250 ℃成長石墨烯，得到石墨烯/金屬複合透明導電薄膜，片電阻值為755.48 ohm/sq，穿透率維持在近75 % @ 550 nm，完成可直接成長在光電產品上之透明導電薄膜的研究。

並同時研究低溫直接成長石墨烯於基板上的技術，利用鎳金屬的溶入-析出特性，以低溫製程的電漿輔助化學氣相沉積法直接成長石墨烯於基板上。

摘要(英)

Graphene is one of the popular materials in recent years, which has excellent electrical properties, high transmittance and high thermal conductivity; it can also be the flexible transparent conductive film. The present research are hoped to replace the traditional transparent conductive, such as Aluminum Zinc Oxide (AZO), Indium Tin oxide (ITO) etc. Because of graphene growth required a metal catalytic synthesis at very high temperature (1000 ℃), and the photovoltaic products are unable to process high-temperature. So, to replace the traditional transparent conductive by graphene, there are many challenges to overcome.

In this study, the objective is directly grown graphene on optoelectronic products without high temperature process and transfer. First, coating the high transmittance metal film as the catalytic metal by magnetron sputter, and then growth graphene on metal thin film by low-temperature plasma enhanced chemical vapor deposition (PECVD), in order to maintain transparency, the metal film transmittance must be more than 80% at 550 nm (containing a transparent substrate, such as glass, quartz, sapphire, etc.), and the thickness must be 5 nm or less. Then use a low temperature plasma enhanced chemical vapor deposition to grow graphene at 250 ℃.

The result is the graphene / metal composite transparent conductive film, which sheet resistance was 755.48 ohm / square, and transmittance remained at nearly 75% at 550 nm, complete growth in direct research on the transparent conductive film photovoltaic products.

And research the low temperature process of PECVD of directly grown graphene on the substrate by using nickel′s characteristics: dissolved and precipitation.

關鍵字(中)

★ 鎳
★ 磁控濺鍍
★ 低溫
★ 電漿輔助化學氣相沉積法
★ 石墨烯

關鍵字(英)

★ Nickel
★ magnetron sputter
★ low temperature
★ plasma enhanced chemical vapor deposition (PECVD)
★ graphene

論文目次

摘要 i

Abstract ii

致謝 iii

目錄 iv

圖目錄 vii

表目錄 xi

第一章緒論 1

1-1 前言 1

1-2 研究動機 2

1-3 研究架構 4

第二章基礎理論文獻回顧 5

2-1 石墨烯基礎理論 5

2-2 透明導電薄膜 8

2-3 石墨烯製備方法 10

2-3-1 機械剝離法 11

2-3-2 碳化矽磊晶法 12

2-3-3 氧化石墨烯還原法 12

2-3-4 化學氣相沉積法 13

2-3-5 電漿輔助化學氣相沉積法 15

2-4 電漿源原理及濺鍍法 17

2-5 金屬薄膜成長石墨烯 20

2-6 選用鎳作為CVD製程之金屬薄膜 26

第三章實驗方法與儀器介紹 27

3-1 石墨烯/鎳金屬複合薄膜製程 27

3-1-1 鍍製金屬薄膜 27

3-1-2 電漿輔助化學氣相沉積法製程介紹 28

3-1-3 以PECVD成長石墨烯/鎳金屬複合薄膜 29

3-1-4 利用鎳金屬特性以PECVD直接成長石墨烯於基板 30

3-2 分析儀器 30

3-2-1 拉曼光譜儀 31

3-2-2 四點探針 33

3-2-3 霍爾量測儀 34

3-2-4 光譜儀 35

3-2-5 掃描式電子顯微鏡 35

3-2-6 原子力顯微鏡 36

第四章實驗結果與討論 38

4-1 磁控濺鍍法之金屬薄膜成長石墨烯/鎳複合薄膜 38

4-1-1 溫度對於成長石墨烯之影響 38

4-1-2 複合薄膜之光性與電性分析 43

4-1-3 複合薄膜之拉曼量測與SEM表面量測 46

4-1-4 分析金屬薄膜於成長前後表面形貌 49

4-2 直接成長石墨烯於非金屬催化基板 52

4-2-1 光性與電性分析 53

4-2-2 拉曼分析 56

4-3 比較兩種石墨烯成長方式 59

第五章結論與未來工作 64

參考文獻 67

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指導教授

郭倩丞(Chien-Cheng Kuo)

審核日期

2015-8-26

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