金屬輔助化學蝕刻法製備矽奈米線之熱電性質研究

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柯佩汝(Pei-Ju Ko) 查詢紙本館藏

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材料科學與工程研究所

論文名稱

金屬輔助化學蝕刻法製備矽奈米線之熱電性質研究
(Thermoelectric properties of silicon nanowires fabricated using metal-assisted chemical etching)

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摘要(中)

矽塊材在室溫下為高熱導率材料，熱導率約為150 W/m-K，導致矽塊材ZT值只有0.01，為不良的熱電材料，降低矽的熱導率才能提升ZT值，因此，一維奈米結構成為熱門的研究。相較於塊材，一維矽奈米線結構表面容積比大，聲子傳遞受到侷限，導致聲子散射，有效降低熱導率。本研究使用低摻雜p-type及重摻雜n-type (100)矽晶片，以金屬輔助化學蝕刻法(Mental-assisted chemical etching)製成單晶粗糙的矽奈米線，直徑約為150-250nm，熱導率明顯下降，經氧電漿蝕刻，低摻雜奈米線電導率電導率會上升。

摘要(英)

The thermal conductivity of bulk silicon is 150Wm-1K-1 at room temperature. It is considered as poor thermoelectric material. The ZT is just 0.01 due to its high thermal conductivity. Thus, one dimensional nanostructure has become a good study to solve this problem. Comparing with bulk, there have large surface to volume ratio of one dimension nanostructure. The thermal conductivity reduced by the phonon scattering in the boundary of nanowires. It is helpful to reduce the thermal conductivity. In our study, we use MACE method to fabricate single rough silicon nanowires from lightly doped p-type and heavily doped n-type (100) wafers. The diameter of silicon nanowires are about 150-250nm. The thermal conductivity was decreasing obviously. After oxygen plasma etching, the electric conductivity was increased for lightly doped silicon nanowires.

關鍵字(中)

★ 矽
★ 一微奈米結構
★ 金屬輔助化學蝕刻法
★ 熱電
★ 電漿表面改質

關鍵字(英)

★ silicon
★ one-dimensional nanostructure
★ mental-assisted chemical etching
★ thermoelectric
★ plasma-surface modification

論文目次

摘要 i

Abstract ii

致謝 iii

目錄 v

圖目錄 viii

第一章文獻回顧 1

1.1矽一維奈米結構特性 1

1.2 矽一維奈米結構合成方法 2

1.2.1 熱蒸鍍法 2

1.2.2 雷射消融法 2

1.2.3 化學氣相沉積法 3

1.2.4 分子束磊晶法 4

1.2.5 超臨界流體-液-固合成法 5

1.3 矽一維奈米結構合成機制 6

1.3.1 氣-液-固成長機制 6

1.3.2 氣-固-固成長機制 7

1.3.3 固-液-固成長機制 8

1.3.4 溶液-液-固成長機制 9

1.3.5 氧化物輔助成長機制 9

1.4 金屬輔助蝕刻法 10

1.4.1一步金屬輔助化學蝕刻法 10

1.4.2 兩步金屬輔助化學蝕刻法 12

1.5 熱電效應及熱電材料 12

1.6 電漿表面改質技術 15

第二章實驗方法及儀器 18

2.1 實驗流程圖 18

2.2 實驗藥品 19

2.3 實驗儀器 20

2.3.1 顯微拉曼光譜儀 20

2.3.2 掃描式電子顯微鏡 20

2.3.3 穿透式電子顯微鏡 21

2.3.4 雙束型場發射聚焦離子束系統 22

2.3.5 微波電漿源及電源供應器 23

第三章矽奈米結構之熱電性質探討 25

3.1 研究動機 25

3.2 實驗步驟 27

3.2.1 製備矽奈米線 27

3.2.2 矽奈米線電漿改質製成 30

3.2.3 製備熱電性質量測試片 31

3.2.4 熱電性質量測 32

第四章實驗結果與討論 35

4.1矽奈米線結構與形貌分析 35

4.1.1金屬輔助化學蝕刻法矽奈米線 35

4.1.2電漿改質矽奈米線 41

4.2熱電性質分析 47

4.3 結論 52

第五章未來展望 53

參考文獻 54

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指導教授

李勝偉(Sheng-Wei Lee)

審核日期

2015-8-27

推文