830nm雷射光照對P型矽晶圓表面電化學蝕刻之影響

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姓名

王薏茹(Wang Yiru) 查詢紙本館藏

畢業系所

材料科學與工程研究所

論文名稱

830nm雷射光照對P型矽晶圓表面電化學蝕刻之影響
(The influences of the 830nm Laser in the Electrochemical Etching Process with P-type Silicon Wafers)

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摘要(中)

近年來有關於多孔矽的研究與應用越來越廣泛，在半導體製程、太陽能元件、藥物檢測及食品檢測皆有非常多的應用，顯示多孔矽有非常廣泛研究價值。2012年本研究團隊在進行矽晶圓電化學蝕刻時，發現若同步使用633nm He-Ne雷射光照射於晶圓表面，會使電化學蝕刻速率降低。
本研究延續既有成果，選用830nm IR雷射，進一步了解雷射光能量參數以及雷射波長對於抗蝕刻的影響。此製程技術未來可以整合微機電技術中曝光、顯影、光刻製程，並且取代半導體的蝕刻製程。

摘要(英)

In recent years, researches on porous silicon and related applications are widely applied to semiconductor processing, solar cells, drug testing and food testing. Thus, the research value of porous silicon is widely acknowledged. In 2012, when Laboratory of Nanoclub was conducting electrochemical etching for the P-type silicon wafer, this research team accidentally discovered that the etching rate would decrease if the He-Ne laser (633nm) was synchronously shined on the surface of the wafer.
The study extends the existing research results, aiming to further research the influences of laser energy parameters and laser beam wavelengths on electrochemical etching through the use of the 830nm IR laser. This technology can integrate the MEMS processing techniques such as exposure, development and lithography in the future and can replace the etching process of semiconductors.

關鍵字(中)

★ 多孔矽

關鍵字(英)

★ porous silicon

論文目次

摘要 I
ABSTRACT II
致謝 II
圖目錄 VII
表目錄 X
第一章緒論 1
1-1 研究背景 1
1-2多孔矽製程 2
1-3多孔矽應用 5
1-4 研究動機 6
第二章原理與文獻回顧 7
2-1多孔矽理論模型 7
2-1-1 比爾模型（The Beale Model） 7
2-1-2 擴散限制模型（The Diffusion-Limited Model） 8
2-1-3 量子模型（The Quantum Model） 9
2-2 多孔矽形成機制 10
第三章實驗方法 14
3-1 實驗試片前處理 14
3-2 實驗流程 17
3-3 實驗與分析儀器 19
3-3-1光學系統 19
3-3-2 電化學蝕刻系統 19
3-3-3 場發射掃描式電子顯微鏡與原子力顯微鏡 23
第四章結果與討論 25
4-1 實驗試片觀察之結果 25
4-2 FE-SEM比較雷射光照與非光照區多孔矽表面與橫截面形貌….25
4-3 波長對抗蝕刻影響 36
4-4 量測孔矽率 38
4-5使用AFM比較雷射光照區粗糙度 40
4-6雷射光照對多層多孔矽抗蝕刻的影響 36
第五章結論 44
參考文獻 46

參考文獻

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指導教授

李天錫(Lee, Tien-His)

審核日期

2015-7-6

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