半導體黃光製程中六甲基二矽氮烷 之數量對顯影後圖型之影響

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姓名

何建鋒(Jian-Fong He) 查詢紙本館藏

畢業系所

機械工程學系在職專班

論文名稱

半導體黃光製程中六甲基二矽氮烷之數量對顯影後圖型之影響

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摘要(中)

摘要
本篇論文主要研究探討半導體黃光製程的HMDS(六甲基二矽氮烷, Hexamethyldisilazane)在其製程中之應用。半導體黃光製程包括上底材(Priming)，也就是HMDS(六甲基矽氮烷, Hexamethyldisilazane)、光阻塗佈(Resist Coating)、曝光(Exposure)、顯影(Develop)、烘烤(Baking)、量測(Measure)。
上述之黃光製程，每個步驟對最後要量測的值，都會因為當時的設定參數有所不同，而有不一樣的結果。而參數設定的最佳化，必須依照產品當時所需要的規格，來實驗做參數比較。
本論文以探討HMDS(六甲基矽氮烷, Hexamethyldisilazane)的動機點是來自於客戶端產品的圖型量測值缺陷，而其缺陷情形為晶圓曝光顯影後之圖型倒塌。為了找出其圖型倒塌原因，將以最有可能發生原因的六甲基矽氮烷來做研究及實驗，以證明及改善製程不良。

摘要(英)

Abstract
The application of HMDS (Hexamethyldisilazane) in semiconductor lithography process is mainly explain in this report. In semiconductor Lithography process, it includes Priming, HMDS (Hexamethyldisilazane), Resist Coating, Exposure, Develop, Baking and Measurement.

For semiconductor Lithography process, the value of the final measurement will very base on the parameter settings that were enter for each process.
The optimization of parameter settings come from multiple experiments and compare results with each other. For experiment’s parameter settings, it is based on the required specifications depend on each product.

The motivation of studying HMDS (Hexamethyldisilazane) comes from the defect of pattern from the product of customer. The reason of defect for pattern is because of the pattern of wafer exposure.

In order to discover the reason of failure, this report will focus on the research of Hexamethylsilazane for improvement of process.

關鍵字(中)

★ 六甲基二矽氮烷

關鍵字(英)

★ Hexamethyldisilazane

論文目次

目次
摘要.....................................................II
Abstract..............................................III
誌謝....................................................V
目次.....................................................VI
圖目錄...................................................VIII
表目錄....................................................XII
第一章.緒論...............................................1
第二章.半導體黃光製程介紹.................................3
2-1 半導體黃光製程........................................3
2-1-1 Prime(塗底).........................................4
2-1-2 Coating(光阻塗佈)...................................5
2-1-3 Soft Bake(軟烤).....................................5
2-1-4 Cooling(冷卻).......................................6
2-2 曝光機................................................6
2-2-1 Exposure(曝光)......................................6
2-2-2 PEB(Post-Exposure-Bake).............................7
2-3 Develop(顯影).........................................7
2-4 Hard Bake(硬烤)......................................8
第三章.實驗與結果.........................................9
3-1 實驗方法..............................................9
3-2 實驗流程及機台........................................9
3-2-1 ACT 8...............................................10
3-2-2 KRUSS DSA-30 (measure contact angle)................13
3-2-3 ASML PAS 5500 system................................15
3-2-4 Applied Materials Vera SEM..........................17
3-3 TEL Track coating HMDS參數條件.........................22
3-3-1設定時間: 20S.......................................22
3-3-2設定時間: 40S.......................................29
3-3-3設定時間: 60S.......................................35
3-3-4設定時間: 80S.......................................41
3-3-5設定時間: 90S......................................47 3-3-6設定時間: 120S......................................53
3-4討論..................................................58第四章.結論..............................................64
參考文獻.................................................65

圖目錄
圖1-1半導體廠商製程趨勢..................................1
圖2-1半導體黃光製程......................................3
圖2-2 TEL ACT 8...........................................4
圖2-3 晶圓光阻塗佈........................................5
圖2-4 ASML TWINSCAN system Exposure Machine...............7
圖3-1為nozzle移動到wafer中心點準備開始噴灑光阻.........11
圖3-2為nozzle 在wafer表面噴灑光阻過程，可以看到wafer旋轉過程使噴灑的光阻均勻分佈在wafer上.......................12
圖3-3 KRUSS DSA-30.......................................13
圖3-4為wafer在KRUSS DSA-30上作業，滴上水滴後準備量測Contact Angle(接觸角)............................................14
圖3-5 Contact Angle(接觸角)所量測之九點..................14
圖3-6為曝光光源穿過Reticle(光罩)，再經由Lens(透鏡)後，光源散佈於wafer(晶圓) 上.....................................15
圖3-7 光對光照的繞射.....................................16
圖3-8 SEM 量測簡圖.......................................17
圖3-9-1 SEM量測顯影後之正常圖型..........................18
圖3-9-2 SEM量測顯影後之正常圖型..........................18
圖3-9-3 SEM量測顯影後之正常圖型..........................19
圖3-10-1 SEM量測顯影後之異常圖型.........................20
圖3-10-2 SEM量測顯影後之異常圖型.........................20
圖3-10-3 SEM量測顯影後之異常圖型.........................21
圖3-11 為量測contact angle (接觸角)之量測點..............22
圖3-12 20S contact angle P1量測點........................24
圖3-13 20S coating 2D profile............................25
圖3-14 20S coating 3D profile............................25
圖3-15 20S HMDS塗底後顯影之圖型..........................27
圖3-16 20S HMDS塗底後顯影之圖型..........................27
圖3-17 20S HMDS塗底後顯影之圖型..........................28
圖3-18 40S contact angle P3量測點.........................29
圖3-19 40S coating 2D profile............................31
圖3-20 40S coating 3D profile............................31
圖3-21 40S HMDS塗底後顯影之圖型..........................33
圖3-22 40S HMDS塗底後顯影之圖型..........................33
圖3-23 40S HMDS塗底後顯影之圖型..........................34
圖3-24 60S contact angle P5量測點........................35
圖3-25 60S coating 2D profile............................37
圖3-26 60S coating 3Dprofile.............................37
圖3-27 60S HMDS塗底後顯影之圖型..........................39
圖3-28 60S HMDS塗底後顯影之圖型..........................39
圖3-29 80S contact angle P7量測點........................41
圖3-30 80S coating 2D profile............................43
圖3-31 80S coating 3Dprofile.............................43
圖3-32 80S HMDS塗底後顯影之圖型..........................45
圖3-33 80S HMDS塗底後顯影之圖型..........................45
圖3-34 90S contact angle P0量測點........................47
圖3-35 90S coating 2D profile.............................49
圖3-36 90S coating 3D profile..............................49
圖3-37 90S HMDS塗底後顯影之圖型..........................51
圖3-38 90S HMDS塗底後顯影之圖型..........................51
圖3-39 120S contact angle P2量測點.......................53
圖3-40 120S coating 2D profile...........................55
圖3-41 120S coating 3D profile...........................55
圖3-42 HMDS不同秒數塗佈之接觸角呈現狀況..................61
圖3-43 HMDS相關反應化學式與矽醇之形成、脫水...............63
圖3-44 HMDS相關反應化學式與矽醇之形成、脫水...............63
圖3-45 HMDS相關反應化學式與矽醇之形成、脫水.............63

參考文獻

參考文獻
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指導教授

李天錫

審核日期

2017-3-10

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