姓名 |
林明政(Ming-cheng Lin)
查詢紙本館藏 |
畢業系所 |
機械工程學系在職專班 |
論文名稱 |
利用光導效應改善非接觸式電容位移感測器測厚儀之研究 (Use of the photo conductive effect to improve non-contact capacitive displacement sensors measurement of Thickness)
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相關論文 | |
檔案 |
[Endnote RIS 格式]
[Bibtex 格式]
[相關文章] [文章引用] [完整記錄] [館藏目錄] 至系統瀏覽論文 ( 永不開放)
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摘要(中) |
非接觸式電容位移感測器之晶片厚度量測儀器的應用已經有數十年,以非接觸式電容原理設計的精密測量厚度(平坦度)儀器。非接觸式之特點為無磨擦、無損磨和無惰性,且還具有信噪比大、靈敏度高、頻響寬、非線性小、精度穩定性佳等優點,但在使用上有其限制,其限制在於量測超高阻矽晶片特別是〖10〗^5Ω-cm以上之晶片,量測上會有數值誤差值異常現象。非接觸式電容位移感測器之靜電場於量測超高阻(〖10〗^5Ω-cm以上)矽晶片高功率Power裝置晶片通常使用超高阻晶片,以往量測CZ與FZ長晶法成長的超高阻矽晶棒切割之矽晶片,需經過退火RTA(Rapid Thermal Annealing)熱處理程序將矽晶棒內部之摻雜分布更均勻外,經快速退火熱處理程序將阻抗數值降低至低於〖10〗^5Ω-cm,才能透過非接觸式電容感測器厚度(平坦度)量測儀器,量測得準確的平坦度數據,本研究利用光導效應提高導電率,降低其阻抗使超高阻阻抗數值降低至低於〖10〗^5Ω-cm,使得非接觸式電容位移感測器晶片厚度(平坦度)量測儀器,量測數值得到改善其準確性,本研究使用波長廣佈可見光範圍之鹵素燈及指向性高強度集中的可見光雷射光來照射量測區域之矽晶片表面,讀取其數據,實驗結果準確性及穩定性皆有顯著的改善。 |
摘要(英) |
Non-contact capacitive disposition sensor on thickness measurement equipment applications have many years then use the non-contact capacitive principle to designed measurement thickness (flatness) gauge. Contactless of features is without friction, non -destructive and non- inertness characteristics. It also has high signal-noise ratio and high sensitive and bandwidth wide, non-linear is small, precision stability better and more benefits. But the still has its limitations, it is limited to a very high resistivity wafer especially it over resistivity 〖10〗^5Ω-cm measurement will have a value is not accurate. Because when non-contact capacitive disposition sensor of the electrostatic field will be pass through the wafer surface on the ultra-high resistivity wafer ( > resistivity 〖10〗^5Ω-cm) would cause measurement is not correct. And high-power device chip typically use FZ within phosphorus atomic or through NTD technology replace silicon to phosphorus for ultra-high resistivity wafer. As well known the high resistivity silicon wafer must be through rapid thermal annealing (RTA) process to uniform inside dopants then also reduce resistivity. So measure it will be accurately. This research used the photo conductive effect to enhance conductivity then reduce the resistivity < 〖10〗^5Ω-cm and improve non-contact capacitive displacement sensors measurement of thickness more accurately. This study used halogen lamp in visible wavelength range and used directive, high intensity, visible laser light irradiating the measurement area of the wafer surface to improve the accuracy and stability of the results. |
關鍵字(中) |
★ silicon wafer ★ non-contact measurement ★ photo conductive effect |
關鍵字(英) |
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論文目次 |
目錄
中文摘要........................I
英文摘要........................II
致謝..........................III
目錄...........................IV
圖目錄..........................VII
表目錄.......................... X
第一章、緒論.......................1
1.1 前言........................1
1.2 研究動機與目的..................4
1.3 文獻回顧....................5
1.4 論文架構...................6
第二章、 量測原理......................7
2.1 章序說明.....................7
2.2 光電效應之光導效應.................7
2.3 非接觸式電容感測器型式說明............10
2.3.1.平行板電容原理..............10
2.3.2.邊際電容原理...............12
2.3.3.非接觸式電容式位移感測器量測厚度方式...14
2.4 四點探針阻值量測原理..........16
第三章、 研究方法...................18
3.1 研究架構...................18
3.2 試片與光源準備..................19
3.2.1.試樣片之準備...............19
3.2.2.光源準備...............20
3.3 量測器材設備介紹.................20
3.4 實驗步驟.....................22
3.4.1.試樣片清洗與標示取樣點..........22
3.4.2.量測取樣片阻抗之數據..........22
3.4.3.非接觸式電容位移感測器晶片平坦度測厚儀校
正..22
3.4.4.量測取樣片阻抗及使用非接觸式電容位移感測器之
量測
厚度儀器量測未照射光線時之數據.....23
3.4.5.使用鹵素燈照射非接觸式電容位移感測器之測厚
儀...24
3.4.6.使用雷射不同波長光源照射量測區域,光對於數值
影響與穩定度---照射光源入射感測器上測照
射.......25
3.4.7.使用雷射不同波長光源照射量測區域,光對於數值
影響與穩定度---照射光源入射感測器上測與下側
照射....25
3.4.8.量測試樣片阻抗並且照射可見光雷射光進行數據取
樣..26
第四章 結果與討論...................27
4.1 鹵素燈光源對於不同強度照射量測晶片並測得數據數值穩定
度..27
4.2 使用雷射不同波長光源照射對於數值影響與穩定度..29
4.2.1.照射光源入射感測器上測照射......29
4.2.2.針對使用紫藍光雷射與綠光雷射與紅光雷射進行連
續讀值十次,觀測其照射上側量測區域讀值及穩定
度.....30
4.2.3.照射光源入射感測器上測與下側照射....37
4.2.4.針對照射光源入射感測器上測與下側照射,使用紫
藍光雷射與綠光雷射與紅光雷射進行連續讀值十
次,觀測其讀值及穩定度..........38
4.2.5.入射光照射感測器量測晶片量測區域上側與入射光
照射上測及下側兩者比較.........44
4.3 使用雷射光線照射試樣A與試樣B及試樣C量測四點探針時之數
據分析................45
4.4 實驗結果.............46
第五章 總結與未來方向............47
參考文獻.......................48
附錄一.......................49
附錄二.......................61
附錄三......................64
附錄四......................69
附錄五....................71 |
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指導教授 |
李天錫
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審核日期 |
2016-7-12 |
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