快速熱熔磊晶成長法製造側向PIN(Ge-Ge-Si)光偵測器

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：34

、訪客IP：3.17.5.68

姓名

蔡宇欣(Yu-Shin Tsai) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

快速熱熔磊晶成長法製造側向PIN(Ge-Ge-Si)光偵測器
(Lateral-Configured Ge-Ge-Si PIN Photodetector on Silicon-on-Insulator substrate by Rapid-Melting-Growth Technique)

相關論文

★ 以熱熔異質磊晶成長法製造之鍺光偵測器	★ 在SOI基板上以快速熱熔法製造高品質鍺及近紅外線光偵測元件之研製
★ 鉭錳合金及銅鍺化合物應用於積體電路後段製程中銅導線之研究	★ 二維薄膜及三維塊材Seebeck係數量測
★ 塊材、薄膜與奈米線之熱導係數量測方法探討	★ 以快速熱熔異質磊晶成長法製作鍺矽累增型光偵測器
★ 以快速熱熔融磊晶成長法製作鍺錫合金PIN型光偵測器	★ 利用火花電漿燒結法製備以矽為基底之奈米材料於熱電特性上之應用研究
★ P型金屬氧化物薄膜的製備應用於軟性電子	★ 金屬氧化物製備應用於軟性電子元件
★ 超導材料釔鋇銅氧化物熱電特性量測分析	★ 鎂矽錫合金熱電特性研究及應用
★ 矽基熱電模組開發及特性研究	★ P型金屬氧化物與硫化物之研究
★ 物聯網之熱感測器應用	★ P型金屬氧化物與硫化物合金薄膜之研究

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

至系統瀏覽論文 ( 永不開放)

摘要(中)

近年來鍺對於應用在電子元件以及光電元件上的趨勢越來越明顯，利用鍺與矽相對小的晶格差異、較易於整合在傳統矽製程上的特點、電子電洞遷移率是矽的2倍，以及較一般材料能帶較窄、並且藉由拉伸應力可使從間接能隙轉成直接能隙的特點，做出具有高光響應度、高頻率的電子元件。但是矽鍺元件雖然較其它三五族元件有較小的晶格差異，但還是有4.2%以上的晶格不匹配，讓鍺整合在矽製程上有一定的困難度，一般的方法會使用直接磊晶MBE……等製程方法，但是成長時間相對較慢，要付出較長的時間以及昂貴的高真空機台使得在整合上需要付出較大的製程成本。
在本論文中使用的是快速熱熔法來成長，較一般的磊晶有更快速的成長時間且可以整合在前段製程，在SOI基板中向下蝕刻出10X5 µm¬2的區域增加沉積非晶鍺厚度並沉積非晶絕緣層覆蓋非晶鍺區域，將試片利用快速熱熔異質磊晶成長重新排列鍺成為多晶結構，並且降低長晶成本和降低矽/鍺異質接面整合難度，最後整合製作出側向式光感測器，量測其光響應度的特性，且利用TEM及拉曼光譜觀測鍺區重新排列的品質。

摘要(英)

High-speed communication devices have been developed for many years for the synergy of photonic and electronic signal transmission. Because of the narrow bandgap for infrared light absorption of germanium and its strain-engineered band gap modulation, the incorporation of germanium into silicon-based optoelectronics has attracted more attention. However, germanium has lattice mismatch of 4.2% with silicon. Generally, germanium epitaxy technique is high-cost by MBE and will compound the difficulty of silicon/germanium integration.
In this thesis, we use rapid-melting-growth to grow germanium thin film on Si, and then we can obtain high-quality germanium mesa. The film was investigated by TEM and SEM microscopy and Raman spectrum. Moreover, the high-quality silicon/germanium/silicon PIN-photodetector was fabricated and measured to study its I-V characteristics and study the photocurrent and responsivity at near-infrared frequency.

關鍵字(中)

★ 光偵測器
★ 快速熱熔磊晶成長法
★ 鍺

關鍵字(英)

★ Photodetector
★ Rapid-Melting-Growth
★ Lateral-Configured
★ Ge

論文目次

Abstrate i
摘要 ii
致謝 iii
目錄 iv
第一章簡介 1
1-1 論文架構 1
1-2 光纖通訊發展 1
1-3 光偵測器 2
1-3-1 光偵測器理論 3
1-3-2 光偵測器架構 3
1-3-3 光偵測器量子效率與光響應度以及截止波長 4
1-3-4 光偵測器種類 5
1-4 研究動機 7
第二章快速熱熔磊晶成長法優勢以及元件設計製作 9
2-1 前言 9
2-2 快速熱熔磊晶程長介紹以及優勢 9
2-3 單晶鍺側向式 PIN 光偵測器製作流程光偵測器製作流程 11
2-4 PIN光偵測器量測方法 19
第三章 PIN 光偵測器量測與探討 23
3-1 前言 23
3-2 快速熱熔磊晶成長法鍺膜品質分析 23
3-2-1拉曼光譜分析 23
3-2-2 SEM&TEM光學繞射比較 25
3-3快速熱熔熱退火側向式PIN(Ge-Ge-Si)光偵測器電性分析 30
第四章快速熱熔熱退火製造側向式 PIN(Ge-Ge-Si)光偵測器結論與展望 36
參考文獻 37

參考文獻

[1] John Wiley & Sons,’’ RP Photonics Consulting”,2008.
[2] R. Chau et al., “Silicon nano-transistors for logic applications,” Physica E:
Low-dimensional Systems and Nanostructures, vol. 19, p. 1, 2003.
[3] Y. Cui et al., “High performance silicon nanowire field effect transistors,” Nano
Lett., vol. 3, p. 149, 2003.
[4] N. Singh et al., “High-performance fully depleted silicon nanowire (diameter ≦
5 nm) gate-all-around CMOS devices,” IEEE Electron Device Lett., vol. 27,
p. 383, 2006.
[5] HyeonDeokYang,Yeon-HoKil,Jong-HanYang,SukillKang,TaeSooJeong, Chel-Jong Choi,TaekSungKim n, Kyu-HwanShim” Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure”,2013.
[6] P.Susthitha Menon, Member, S.Kalthom Tasirin, Ibrahim Ahmad, S.Fazlili Abdullah”,High Performance of a SOI-based Lateral PIN Photodiode Using SiGe/Si Multilayer Quantum Well”,2012.
[7] Suhail Murtaza,“Rob Mayer, Mahbub Rashed, David Kinosky, Christine Maziar,”Room Temperature Elec troabsorption in a Ge,Si - PIN Photodiode”,2008.
[8] Po-Han Huang,”Silicon/Gemanium Heterojunction Photodector by Rapid-Melting-Growth Technique”,2014.
[9] H.J.R.Dutton,”Understand Optical Communications”,1998.
[10]張欣會,III族氮化物之金屬-半導體-金屬紫外光感測氣特性研究”國立中原大學研究所論文,2008.
[11] Lorenzo Colace, Gaetano Assanto et al “Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers”,2008.
[12] S. Klinger1, W. Vogel1, M. Berroth1, M. Kaschel2, M. Oehme2, E. Kasper ,“Ge on Si p-i-n Photodetectors with 40 GHz bandwidth”,2008.
[13] Yasuhiko Ishikawa, Sungbong Park, Jiro Osaka, and Kazumi Wada “Low-Dark-Current pin Photodiodes Using As-Grown Ge with an i-Si Insertion Layer:Mechanism of Dark Current Suppression”,2009.
[14] Kirnehkrib “English: Pin-photodiode with space charge distribution under reverse voltage”,2011.
[15] Djafar K. Mynbaev and Lowell L. Scheiner’’ Fiber-Optic Communications Technology”,2001.
[16] 郭銘浩，““量身訂作”鍺量子點以應用於近紅外光偵測元件之研製”，碩士論文，國立中央大學，民國102年。
[17] J. Michel, J. Liu and L. C. Kimerling,“High-performance Ge-on-Si photodetectors.”Nature Photonics, 4, p527, 2010.
[18] J. Liu et al., “Ge-on-Si optoelectronics, ”Thin Solid Films,520,3354,(2012).
[19]Masanobu Miyao*et al.” High-mobility Defect-free Ge Single-crystals by Rapid Melting Growth on Insulating Substrates”,2010.
[20] 羅聖全,工業技術研究院材料與化工研究所, “掃瞄式電子顯微鏡”2013.
[21]國立彰化師範大學物理學系洪連輝教授“穿透式電子顯微鏡”,2009.
[22] Tsutomu Tezuka, Shu Nakaharai, Yoshihiko Moriyama, Norio Hirashita, Eiji Toyoda, Naoharu Sugiyama,Tomohisa Mizuno, and Shin-ichi Takagi ,”A New Strained-SOI/GOI Dual CMOS Technology Based on Local Condensation Technique,1994.
[23]王上明,“在SOI基板上以快速熱熔法製造高品質鍺及近紅外線光偵測元件之研製”,碩士論文,2014.
[24] S. Mirbaha, R. N. Tait,” Metal-semiconductor-metal photodetector with a-Ge:H absorption layer for 1.55μm optical communication wavelength”,2010.
[25] Cho, A. Y.; Arthur, J. R.; Jr. “Molecular beam epitaxy. Prog. Solid State Chem.”, 1975.
[26] Tao Yin1*, Rami Cohen2, Mike M. Morse1, Gadi Sarid2, Yoel Chetrit2, Doron Rubin2,and Mario J. Paniccia1“31GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator Substrate”,2007.
[27] J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu,S. J. Lee, Guo-Qiang Lo, and D.-L. Kwong ,“Evanescent-Coupled Ge p-i-n Photodetectors onSi-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations ”,2008.
[28] P.Susthitha Menon, Member,S.Kalthom Tasirin, Ibrahim Ahmad, S.Fazlili Abdullah,”High Performance of a SOI-based Lateral PIN Photodiode Using SiGe/Si Multilayer Quantum Well”,2012.
[29] M. Oehme,a) M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze“GeSn p-i-n detectors integrated on Si with up to 4% Sn”,2014.

指導教授

辛正倫(Cheng-Lun Hsin)

審核日期

2015-10-14

推文