二硫化鉬及二硫化鎢電晶體的 低頻雜訊行為

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姓名

劉彥伯(Yen-Po Liu) 查詢紙本館藏

畢業系所

物理學系

論文名稱

二硫化鉬及二硫化鎢電晶體的低頻雜訊行為
(Behaviors of Low-Frequency Electrical Noise in MoS2 and WS2 Field-Effect Transistors)

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摘要(中)

在這篇論文中，我們研究化學沉積法成長的單層二硫化鎢(WS2)和二
硫化鉬(MoS2)場效電晶體元件的電子傳輸特性與低頻雜訊表現。我們測量單層二硫化鎢和二硫化鉬的電流-電壓曲線得知兩材料皆為N型半導體，同時也由此計算出材料的電子遷移率。單層二硫化鎢和二硫化鉬的電子遷移率分別為1-2 cm2/Vs和30-40 cm2/Vs。單層二硫化鎢電晶體的低頻雜訊行為和在高電子濃度(大於3 × 1013 cm-2)下單層二硫化鉬電晶體的低頻雜訊表現。
低頻雜訊強度與電子濃度的關係可以判斷1/f 雜訊是來自電荷數目
的擾動還是電荷遷移率的擾動。低頻雜訊強度與電子濃度的關係是找出
1/f 雜訊的電流擾動的來源的重要課題。在我們的工作中發現，單層二硫化鎢電晶體的1/f 雜訊雖然γ=1.5不符合Hooge empirical low，但雜訊表現可以判斷此1/f 雜訊可能是源自於電荷遷移率擾動，而單層二硫化鉬電晶體在高電子濃度下的1/f 雜訊是源自於電荷數目的擾動。

摘要(英)

In this thesis, we study electrical transport properties and low frequency noise behaviors on chemical-vapor-deposition (CVD) monolayer WS2 and MoS2 FETs devices. We measure the transfer function and the IV characteristics, and N-type semiconducting behaviors of both WS2 and MoS2
are also obtained. The mobility of single-layered WS2 and MoS2 are 1-2 cm2/Vs and 30-40 cm2/Vs, respectively. Moreover, the low-frequency noise behavior of monolayer WS2 FETs is investigated, and low frequency noise performance in high carrier density (above 3 × 1013 cm-2) of monolayer MoS2 FETs is discussed in Chapter 3.
Carrier density dependence of low frequency electrical noise is a way to determine whether the 1/f noise is dominated by fluctuations in carrier number or carrier mobility. Carrier density dependence is an important topic to characterize the source of electrical current fluctuation forming 1/f noise out. Our experimental results show that 1/f noise of CVD single-layer WS2 FETs is dominated by fluctuation of carrier mobility, although γ=1.5 of this WS2 1/f noise deviates from Hooge empirical law, and 1/f noise of CVD single-layer MoS2 FETs at high carrier density regime is dominated by fluctuation of carrier number.

關鍵字(中)

★ 1/f 雜訊
★ 低頻雜訊
★ 過渡金屬硫屬化合物
★ 二維材料
★ 二硫化鉬
★ 二硫化鎢

關鍵字(英)

★ 1/f noise
★ Low-frequency noise
★ Transition metal dichalcogenides
★ 2D material
★ MoS2
★ WS2

論文目次

目錄Contents
Ab s t r a c t …………………………………………………………………………………………………………………I
中文摘要……………………………………………………………………………………………………………………………………II
誌謝…………………………………………………………………………………………………………………………………………III
目錄Contents………………………………………………………………………………………………………………………IV
圖目錄List of Figures………………………………………………………………………………………………VI
表目錄List of Tables…………………………………………………………………………………………………XI
Chapter 1 Introduction to 1/f Noise in Semiconducting TMDs…………………………………1
1.1 Electrical Current Fluctuation at Low Frequency…………………………………………………1
1.1.1 The Hooge Empir ical Law…………………………………………………………………………3
1.1.2 Random Telegraph Noise and Models of 1/f noise…………………………3
1.1.3 The McWhorter Model and the Hooge Model…………………………………5
1.2 Introduction to TMDs…………………………………………………………………………………………9
1.3 Low-Frequency Electronic Noise in TMDs Transistors……………………………15
Chapter 2 Experimental Methods………………………………………………………………………19
2.1 Device Fabrication……………………………………………………………………………………………19
2.1.1 Electron Beam Lithography……………………………………………………………………20
2.1.2 Device Introduction……………………………………………………………………………………22
2.2 Ohmic Contact…………………………………………………………………………………………………………23
2.2.1 Heater Annealing……………………………………………………………………………………………25
2.2.2 High Current Annealing……………………………………………………………………………26
2.3 Measurement Setup………………………………………………………………………………………………27
2.3.1 Instrument Setup……………………………………………………………………………………………27
2.3.2 Instrument List………………………………………………………………………………………………28
2.3.3 Repeal the 60Hz Noise………………………………………………………………………………30
Chapter 3 Result of Experiment………………………………………………………………………31
3.1 Experimental Result of WS2………………………………………………………………………31
3.1.1 Optical characterizations of WS2…………………………………………………31
3.1.2 Transport Characteristic of WS2……………………………………………………32
3.1.3 Low-frequency noise behavior of WS2 FETs……………………………33
3.1.4 Carrier Density Dependence in WS2 FETs…………………………………35
3.2 Experimental Result of MoS2……………………………………………………………………37
3.2.1 Optical characterizations of MoS2………………………………………………37
3.2.2 Transport Characteristic of MoS2…………………………………………………38
3.2.3 Low-frequency noise behavior of MoS2 FETs…………………………40
3.2.4 Carrier Density Dependence in MoS2 FETs………………………………42
Chapter 4 Conclusion and Future Work ……………………………………………………45
References……………………………………………………………………………………………………………………………47

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指導教授

陳永富(Yung-Fu Chen)

審核日期

2017-1-11

推文