摘要(英) |
This work investigates the Raman spectroscopy of low temperature (180 ℃) growth germanium thin film on Si (100) substrate using electron cyclotron resonance chemical vapor deposition. The film quality and stress with various process parameters during deposition process, such as flow rates of GeH4, working pressures and inner sub-magnetic coil current, have been discussed. As the GeH4 flow rate increased, the crystallinity of Ge thin film was increased and the tensile strain was decreased. In addition, if the working pressure was increased, the Ge phonon peak position shifted to low energy more and the crystallinity was decreased, as well as the result by increasing GeH4 flow rate. However, if the inner sub-magnetic coil current was increased, the crystallinity of Ge thin film was increased and the tensile strain was decreased. Through the investigation of the OES spectroscopy, these results were depended on the hydrogen dissociation, which enhances germanium lattice structure arranged neatly during deposition process. If the flow rates of GeH4 increased, and the working pressure increased or the inner sub-magnetic coil current was decreased, the hydrogen dissociation would decrease obviously and caused the crystallinity of Ge thin film and the stress decreased. After the annealing process, the qualities of germanium thin films were getting better. The bandgap peak of GaAs grown on such germanium buffer layer was observed successfully in photoluminescence spectra. |
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