摘要(英) |
Transparent conductive oxide layer (TCO) with good optical transmittance and conductivity, is often applied to the solar cell. Through the modulation of work function of TCO to align energy band between TCO and semiconductor, enable to improve the fill factor (FF) of the solar cell effectively. In addition, deposition of emitter layer with different machines, its passivation and absorption coefficient effect open-circuit voltage (VOC) and short circuit current density (JSC) of the solar cell respectively because of different film properties
In the first part, we use simulation software AMPS-1D to investigate the effect of the work function of ITO on heterojunction with intrinsic thin layer (HIT) solar cells. And then fabricate indium tin oxide (ITO) of the TCO film with RF magnetron sputtering process. Through different UV-ozone stripper process temperature and time, modulate the work function of ITO from 4.5 eV to 5.0 eV, and applied the result to silicon based solar cells deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD), in order to investigate its effect on optical properties, electrical properties and conversion efficiency of the solar cells. The results show that increase the work function of ITO to 5.0 eV is applied to the front ITO contacted with the emitter, will effectively improve fill factor from 0.535 to 0.594, the conversion efficiency from 9.76 % to 12.14 %; and decrease the work function of ITO to 4.5 eV is applied to the back ITO in contacted with the back surface field, will effectively improve the fill factor from 0.53 to 0.54, the conversion efficiency from 10.9 % to 11.22 %.
In the second part, we investigate the different structures of heterojunction silicon solar cells with different equipment, and its variation of optical and electrical characteristics. The results show that the emitter of heterojunction silicon solar cell deposited with PECVD get better passivation effect, improving the open circuit voltage 2.98%; and deposited with ECR-CVD have a lower resistivity and absorption, improving the short circuit current 9.25%. And improve the conversion efficiency from 9.25 % to 11.53 %. |
參考文獻 |
[1] 中國礦冶工程學會,取自http://www.cimme.org.tw/new/PDF-file/5803/013-027.pdf
[2] 台電月刊,取自http://tpcjournal.taipower.com.tw/article/index/id/326/page/1
[3] German Advisory Council on Global Change,http://www.wbgu.de/en/home/
[4] ITRPV Edition 2015_Revision 1,取自http://www.itrpv.net/Home/
[5] 黃惠良,太陽電池,五南出版社,民國九十七年。
[6] E. Centurioni and D. Iencinella, "Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance," IEEE Electron Device Letters, vol. 24, no. 3, 177–179, Mar. (2003).
[7] M. W. M. van Cleef, J. K. Rath, F. A. Rubinelli, C. H. M. van der Werf, R. E. I. Schropp, and W. F. van der Weg, "Performance of heterojunction p[sup +] microcrystalline silicon n crystalline silicon solar cells," Journal of Applied Physics, vol. 82, no. 12, p. 6089, (1997).
[8] M. Taguchi et al., "24.7% record efficiency HIT solar cell on thin silicon wafer," IEEE Journal of Photovoltaics, vol. 4, no. 1, pp. 96–99, Jan. (2014).
[9] Pelanchon, F., P. Mialhe, and J.P. Charles, “The photocurrent and the open-circuit voltage of a silicon solar-cell”, solar cells, 28(1): p. 41–55, (1990).
[10] Schimpe, R.,Theory of reflection at the facet of a semiconductor-laser. Aeu-Archiv Fur Elektronik Und Ubertragungstechnik-International Journal of Electronics and Communications, 46(2): p. 80–85, (1992).
[11] M. Quirk and J. Serda, Semiconductor Manufacturing Technology, Ch.11 Deposition, (2001).
[12] 莊達人編著, VLSI 製造技術, 高立圖書有限公司, p. 357, (1996).
[23] A. Matsuda and K. Tanaka, Thin Solar Film, Vol. 171, (1982).
[34] R. Robertson, D. Hils, H. Chatham, and A. Gallagher, “Radical species in argon‐silane discharges”, Appl. Phys. Lett, Vol. 544, (1983).
[45] 陳治明,非晶半導體材料與器件,科學出版社,民國八十年。
[56] A. Matsuda, "Microcrystalline silicon. Growth and device application", Journal of Non-Crystalline Solids, Vol. 338, p. 1–12, (2004).
[17] 楊明輝,透明導電膜(第二版),藝軒圖書出版社,民國一零一年。
[18] 游鈞傑及王駿翰及簡崇恩, "透明導電膜應用於顯示器上之研究", 東南科技大學電子工程系實務專題報告
[19] 李玉華,透明導電膜及其應用,科儀新知,第12卷第一期,(1990),pp. 94 – 102
[20] 谷俊能,ITO在有機發光二極體之應用,工業材料雜誌 188期,(2002), pp. 133-136
[21] 楊賜麟,半導體物理與元件,滄海書局,民國九十九年。
[22] S. M. Sze, Semiconductor devices, physics and technology, 22nd ed. New York: Wiley, John & Sons, (2001).
[23] AMPS-1D, http://www.ampsmodeling.org/
[24] N. Hernández-Como and A. Morales-Acevedo, "Simulation of hetero-junction silicon solar cells with AMPS-1D," Solar Energy Materials and Solar Cells, vol. 94, no. 1, pp. 62–67, Jan. (2010).
[25] W.-K. Oh, S. Q. Hussain, Y.-J. Lee, S. Ahn, and J. Yi, "Study on the ITO work function and hole injection barrier at the interface of ITO/a-si: H(p) in amorphous/crystalline silicon heterojunction solar cells," Materials Research Bulletin, vol. 47, no. 10, pp. 3032–3035, Oct. (2012).
[26] 徐蔚, "The fabrication and optimization of silicon hetero-junction solar cells for high conversion efficiency" ,國立中央大學,(2014).
[27] D. L. Young et al., "Carrier selective, Passivated contacts for high efficiency silicon solar cells based on transparent conducting oxides," Energy Procedia, vol. 55, pp. 733–740, (2014). |