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姓名	連翊鈞(I-Chun Lien)  查詢紙本館藏	畢業系所	照明與顯示科技研究所
論文名稱	石墨烯應用於近紅外光偵測器元件之研究 (Investigation of Graphene Applied on Near Infrared Photodetector)
相關論文	★ 偏壓式磁控濺鍍法製作矽異質接面太陽能電池之研究 ★ 高功率脈衝磁控濺鍍技術鍍製高硬度光學多 層膜的研究 ★ 膜堆光學導納量測儀 ★ 以奈米壓印改善陽極氧化鋁週期性 ★ 含氫矽薄膜太陽電池材料之光電特性研究 ★ 自我複製結構膜光學性質之研究 ★ 溫度及應力對高密度分波多工器(DWDM)濾光片中心波長飄移之研究 ★ 以射頻磁控濺鍍法鍍製P型和N型微晶矽薄膜之研究 ★ 以奈米小球提升矽薄膜太陽能電池吸收之研究 ★ 定光電流量測法在氫化矽薄膜特性的研究 ★ 動態干涉儀量測薄膜之光學常數 ★ 反應式濺鍍過渡態矽薄膜之研究 ★ 光子晶體偏振分光鏡之設計與製作 ★ 偏壓對射頻濺鍍非晶矽太陽能薄膜特性之研究 ★ 負折射率材料應用於抗反射與窄帶濾光片之設計 ★ 負電荷介質材料在矽晶太陽電池之研究
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摘要(中)	本論文主旨為製作近紅外光之石墨烯-鍺-石墨烯光偵測器(Graphene-Germanium-Graphene photodetector)並加以量測及分析。鍺的吸收波段恰可應用於光通訊常用之近紅外光波長850nm、1310nm與1550nm，一般而言會利用金屬做為光偵測器之電極，但會影響受光面積而造成光損耗。近年來石墨烯常被使用於導電薄膜，其為特殊的二維結構，此類型適合以化學氣相沉積法製備，且非常有潛力應用為透明導電膜，具有很多優異特性及光學穿透率，尤其是在紅外光區幾乎是透明的，我們也藉此提升元件的光電流及響應度。 本研究使用指叉狀電極(Interdigitated electrode)做為光偵測器之電極，其目的是利用簡單的製程做出高頻的元件並應用於IC設計當中。我們利用n-Ge基板做為光偵測器的主動區並以雙層的石墨烯做為電極，而此指叉狀電極是由CVD製備的石墨烯轉印至基板上後利用氧電漿蝕刻圖形，我們入射雷射光於元件區並通以直流電壓量測其光暗電流。以石墨烯作為電極之光偵測器除了能增加照光面積提升光電流亦可增加其光暗電流比而達到整流效果。本實驗鍺基板之光偵測器於850 nm、1310 nm及1550 nm之波長之響應度分別可達0.39 A/W、0.59 A/W及0.77 A/W，其光暗電流比也達三個數量級以上。
摘要(英)	A graphene-germanium-graphene photodetector (GSG PD) is investigated in this research with transparent graphene electrodes. Germanium is a good absorption coefficient material in near infrared wavelength including 850 nm, 1310 nm and 1550 nm for optics communication. Generally, the metal electrode was utilized for the photodetector applications. However, there were a lot of light loss for the non-transparency. In recent years, graphene has been found to be a good transparent conductive film (TCF) with a two-dimensional monolayer composed by sp2-bonded carbon atoms. Due to its exceptional electrical conductivity and high optical transmittance especially including near infrared, graphene is one of the promising candidates for TCFs. Therefore, the higher photo-current and responsivity of the device with graphene can be achieved. In this investigation, interdigitated graphene electrodes were applied to a near infrared photodetector. We used a n-type germanium as the substrates and graphene layers as the interdigitated electrodes of the photodetector. The interdigitated graphene electrodes were prepared by chemical vapor deposition (CVD), and transferred to the substrate first, then patterned by O2 plasma. The responsivity of the n-Ge PD was 0.39 A/W, 0.59 A/W and 0.77 A/W for the wavelength 850 nm, 1310 nm and 1550 nm of the incident light, separately. And the photo to dark current ratio was over three orders.
關鍵字(中)	★ 石墨烯 ★ 鍺 ★ 光偵測 ★ 響應度 ★ 指叉狀電極 ★ 光暗電流比	關鍵字(英)	★ graphene ★ germanium ★ photodetector ★ responsivity ★ interdigitated ★ photo to dark current
論文目次	摘要 I Abstract II 致謝 III 目錄 IV 圖目錄 VII 表目錄 IX 第一章 序論 1 1-1 前言 1 1-2 研究動機 4 1-3 論文架構 6 第二章 石墨烯基礎理論 7 2-1 石墨烯發展概況 7 2-2 石墨烯結構與特性 8 2-3 石墨烯製備方法 13 2-3-1 機械剝離法 13 2-3-2 碳化矽磊晶法 15 2-3-3 氧化石墨烯還原法 17 2-3-4 化學氣相沉積法 18 第三章 光偵測器原理 22 3-1 蕭特基接觸與歐姆接觸 22 3-2 光偵測器電子電洞傳遞行為 26 3-3 光偵測器操作原理 27 3-3-1 原理 27 3-3-2 響應度 29 第四章 實驗製程與儀器介紹 30 4-1 近紅外光偵測器元件設計 31 4-1-1 GSG PD元件 31 4-1-2 指叉狀電極設計 32 4-1-3 響應度計算模擬 32 4-2 元件製作流程 36 4-3 石墨烯之製程方法 38 4-3-1 化學氣相沉積法製程石墨烯 39 4-3-2 石墨烯轉印 40 4-4 分析儀器 42 4-4-1 拉曼光譜儀 42 4-4-2 掃描式電子顯微鏡 44 4-4-3 霍爾量測儀 45 4-4-4 紫外光電子能譜儀（UPS） 46 4-4-5 可見光-近紅外光光譜儀 48 4-4-6 響應度量測系統 49 4-4-7 頻率響應量測系統 50 第五章 結果與討論 51 5-1 石墨烯導電膜之分析 51 5-1-1 拉曼光譜 52 5-1-2 電性分析與光學穿透率 53 5-1-3 功函數 55 5-1-4 元件平面圖 57 5-2 n-Ge光偵測器元件 58 5-2-1 光電特性量測 58 5-2-2 響應度 64 5-2-3 頻率響應及響應時間 67 5-3 n-Si光偵測器元件 71 5-3-1 光電特性量測 71 5-3-2 響應度 73 第六章 結論與未來展望 74 參考文獻 76
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指導教授	陳昇暉(Sheng-Hui Chen)	審核日期	2016-9-29
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