應用銅顆粒輔助蝕刻製作矽奈米蟲洞似通道之研究

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姓名

何承隆(Cheng-Long Ho) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

應用銅顆粒輔助蝕刻製作矽奈米蟲洞似通道之研究
(Fabricate nano worm-like tunnel of silicon by copper particals assisted etching)

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摘要(中)

一維奈米材料因其獨特的結構被受很大的關注，其蘊含極大潛能應用在電子、光學及磁性元件。多孔的陽極氧化鋁(anodic aluminum oxid,AAO)是最普遍地用來製作一維奈米材料的模板，但由於AAO模版非常脆弱難以組裝成堅固的元件。若有多孔矽模板來替代AAO模板，即可避開此困難。本論文闡述利用銅輔助化學蝕刻法製備奈米矽通道結構，而其結果不同於以往的電化學蝕刻法所得之形貌。利用此方法探討在矽晶內形成蟲洞似奈米通道的機理，並詳細分析了從銅沉積到矽蝕刻完成的具體流程，從各種不同實驗條件下，找出銅沉積與矽蝕刻之間規律性，由各條件下蝕刻出之孔洞結構中，最終得到了適合當作多孔矽模板之結構。

摘要(英)

One-dimensional (1D) nanomaterials have attracted much attention due to the unique structure, which have found many potential applications in electronic, optical and magnetic devices. Porous anodic aluminum oxide (AAO) templates, are most frequently used to fabricate 1D materials and devices. However, the AAO templates are too fragile to be assembled into sturdy device. With porous silicon templates replacing the AAO templates, the dilemma of AAO template can be avoided. This paper describes fabricating nano tunnel of silicon by copper assisted etching. Compare with electrochemical etching, the results of etching appearance were different. We investigated the formation mechanism of the nano wormhole-like tunnel of silicon, and analyzed the process of nano-tunnel of silicon formation. In different condition, we find the regularity between deposition and etching. By the porous structures etched in various conditions, the porous silicon templates have been prepared.

關鍵字(中)

★ 金屬輔助化學蝕刻
★ 多孔矽
★ 銅輔助蝕刻
★ 非等向蝕刻

關鍵字(英)

★ porous silicon
★ etching
★ nano
★ copper

論文目次

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章緒論 1
1.1前言 1
1.2研究動機與目的 2
第二章原理與文獻回顧 4
2.1 多孔矽的基礎原理 4
2.1.1矽基板的種類 4
2.1.2多孔矽的發現 5
2.1.3電化學蝕刻法 6
2.1.4多孔矽的理論模型 8
2.2金屬輔助化學蝕刻法(MACE) 11
第三章實驗原理與實驗步驟 23
3.1 實驗概述 23
3.2 實驗方法與原理 23
3.3實驗耗材與藥品 25
3.4實驗器材 26
3.5 實驗分析儀器與原理 27
3.6實驗過程 29
3.6.1矽試片切割與清洗 29
3.6.2銅粒子沉積矽基板 29
3.6.3奈米孔洞蝕刻 30
第四章結果與討論 37
4.1沉積時間對銅奈米粒子沉積形貌的影響 37
4.2實驗條件對奈米孔洞形貌之影響 38
第五章結論 47

參考文獻

[1] Uhlir A, "Electrolytic shaping of germanium and silicon‚"Bell System Technical Journal, vol. 35(2), pp. 333-347, 1956.
[2] Fuller C S, Ditzenberger J A, "Diffusion of donor and acceptor elements in silicon‚" Journal of Applied Physics, vol. 27(5), pp. 544-553, 1956.
[3] Turner D R, "Electropolishing silicon in hydrofluoric acid solutions," Journal of the electrochemical Society, vol. 105(7), pp. 402-408, 1958.
[4] Archer R J, "Stain films on silicon," Journal of Physics and Chemistry of Solids, vol . 14, pp. 104-110, 1960.
[5] Watanabe Y, Arita Y, Yokoyama T, Igarashi Y, "Formation and properties of porous silicon and its application," Journal of the Electrochemical society, vol. 122(10), pp. 1351-1355, 1975.
[6] Beale M I J, Benjamin J D, Uren M J, Chew N G, Cullis A G, "An experimental and theoretical study of the formation and microstructure of porous silicon, " Journal of Crystal Growth, vol.73(3), pp. 622-636, 1985.
[7] Beale M I J, Chew N G, Uren M J, Cullis A G, Benjamin J D, "Microstructure and formation mechanism of porous silicon, " Applied Physics Letters, vol. 46(1), pp. 86-88, 1985.
[8] Smith R L, Chuang S F, Collins S D, "A theoretical model of the formation morphologies of porous silicon," Journal of Electronic Materials, vol. 17(6), pp. 533-541, 1988.
[9] Smith R L, Collins S D, "Generalized model for the diffusion-limited aggregation and Eden models of cluster growth, "Physical Review A, vol. 39(10), pp. 5409-5413, 1989
[10] Smith R L, Collins S D, "Porous silicon formation mechanisms," Journal of Applied Physics, vol. 71(8), pp. R1-R22, 1992
[11] Read A J, Needs R J, Nash K J, Canham L T, Calcott P D J, Qteish A, "First-principles calculations of the electronic properties of silicon quantum wires, " Physical review letters, vol. 69(8), pp. 1232-1235, 1992.
[12] Sanders G D, Chang Y C, "Theory of optical properties of quantum wires in porous silicon," Physical Review B, vol. 45(16), pp. 9202, 1992. [13] Lehmann V, Gösele U, "Porous silicon formation: a quantum wire effect," Applied Physics Letters, vol. 58(8), pp. 856-858, 1991.
[14] Dimova-Malinovska D, Sendova-Vassileva M, Tzenov N, Kamenova M, "Preparation of thin porous silicon layers by stain etching," Thin Solid Films, vol. 291(1), pp. 9-12, 1997.
[15] Li X, Bohn P W, " Metal-assisted chemical etching in HF/H2O2 produces porous silicon," Applied Physics Letters, vol. 77(16), pp. 2572-2574, 2000.
[16] Smith Z R, Smith R L, Collins S D, "Mechanism of nanowire formation in metal assisted chemical etching," Electrochimica Acta, vol. 92, pp. 139-147,2013.
[17] Qiu T, Chu P K, "Self-selective electroless plating: An approach for fabrication of functional 1D nanomaterials," Materials Science and Engineering: R: Reports, vol. 61(1), pp. 59-77, 2008.
[18] Huang Z, Fang H, Zhu J, "Fabrication of silicon nanowire arrays with controlled diameter, length, and density," Advanced materials, vol. 19(5), pp. 744-748, 2007.
[19] Peng K, Fang H, Hu J, Wu Y, Zhu J, Yan Y, Lee S T, "Metal‐Particle‐Induced, Highly Localized Site‐Specific Etching of Si and Formation of Single‐Crystalline Si Nanowires in Aqueous Fluoride Solution," Chemistry–A European Journal, vol. 12(30), pp. 7492-7947, 2006.
[20]張家彬,“以自發性化學輔助蝕刻法製備矽奈米結構成長控制之研究”，國立中央大學能源工程所(2010)
[21] Huang Z, Geyer N, Werner P, Boor J, Gösele U, "Metal‐assisted chemical etching of silicon: a review," Advanced materials, vol. 23(2), pp. 285-308, 2011.
[22] Peng K Q, Yan Y J, Gao S P, Zhu J, "Synthesis of large-area silicon nanowire arrays via self-assembling nanoelectrochemistry," Advanced Materials, vol.14(16), pp. 1164-1167, 2002.
[23] Huang Z, Zhang X, Reiche M, Liu L, Lee W, Shimiza T,Senz S, Gösele U, "Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching," Nano letters, vol. 8(9), pp. 3046-3051, 2008.
[24] Huang Z, Shimizu T, Senz S, Stephan S, Zhang Z, Zhang X,Lee W, Geyer N, Gösele U, "Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred< 100> etching directions," Nano letters, vol. 9(7), pp. 2519-2525, 2009.
[25] Huang Z, Shimizu T, Senz S, Zhang Z, Geyer N, Gösele U, "Oxidation rate effect on the direction of metal-assisted chemical and electrochemical etching of silicon," The Journal of Physical Chemistry C, vol. 114(24), pp. 10683-10690, 2010.

指導教授

李天錫(Tien-Hsi Lee)

審核日期

2016-6-15

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