博碩士論文 103324062 詳細資訊




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姓名 賴榕樺(Rong-Hua Lai)  查詢紙本館藏   畢業系所 化學工程與材料工程學系
論文名稱 在氮氣離子佈植非晶矽基材上製備鎳金屬點陣列及其界面反應之研究
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摘要(中) 本研究首度探討規則排列之鎳金屬奈米點陣列與氮氣離子佈植非晶矽基材間不同熱處理條件下之界面反應。從掃描式電子顯微鏡影像觀察分析顯示,直到退火溫度至500℃時,其鎳金屬奈米點陣列尺寸隨著退火溫度升高而有逐漸增加的趨勢。此外,再升高熱處理溫度時,其鎳金屬奈米點形貌將從原本的三角形轉變成環狀結構。從穿透式電子顯微鏡及選區電子繞射圖譜分析顯示,在氮氣離子佈植非晶矽基材上製備之鎳金屬奈米點陣列退火至300-450℃時,其奈米尺寸鎳矽化物點陣生成低電阻相NiSi,當退火溫度升高至500℃甚至更高時,其生成相將完全轉換為高電阻相poly-NiSi2之奈米環。由平面式高解析穿透式電子顯微鏡影像及橫截面影像圖顯示,NiSi2奈米環內部已生成再結晶而外部區域仍為非晶矽型態。退火溫度至550℃時,氮氣離子佈植非晶矽層則完全形成再結晶,相對於一般未鍍製鎳金屬奈米點之氮氣離子佈植非晶矽基材須高於700℃下完全形成再結晶而言,顯示NiSi2奈米環有顯著地提升氮氣離子佈植非晶矽再結晶的溫度約提前200℃。此觀察結果可用鎳矽化物誘發非晶質矽再結晶的製程機制解釋。
摘要(英) We report here the first study on the interfacial reactions of two-dimensional (2D) periodic arrays of Ni nanodots on nitrogen ion-implanted amorphous silicon (N2+-a-Si) substrates at different heat treatments. It was found from SEM observations that the size of the nanodots increased gradually by increasing annealing temperature up to 500 ℃ . Furthermore, for the higher temperature annealed samples, many of the nanodots were found to transit from the original triangular shape to become ring-like in shape. From TEM and SAED analyses, low resistivity NiSi was identified to be the only silicide phase form in N2+-a-Si samples annealed at 300-450 ℃ . As the annealing temperature was increased to 500 ℃ or above, the phase of silicide nanorings was converted into NiSi2 and the structure of the NiSi2 nanorings was polycrystalline. The results of planview HRTEM and cross-section TEM analyses further reveal that the inner region of the NiSi2 nanoring on N2+-a-Si substrate has become crystallized while the outer region of the NiSi2 nanoring is still amorphous. Complete recrystallization of the a-Si layer of the Ni metal nanodots N2+-a-Si sample can be achieved at a temperature as low as 550 ℃, which is about 200 ℃ lower than the annealing temperature required for complete solid-phase recrystallization of the blank N2+-a-Si sample. In addition, the presence of NiSi2 nanodots was found to significantly enhance the recrystallization of N2+-a-Si layer. The observed result can be explained by the Ni-silicide induced crystallization process.
關鍵字(中) ★ 鎳矽化物
★ 氮氣離子佈植
關鍵字(英)
論文目次 摘要 I
Abstract II
致謝 III
第一章 簡介 1
1-1前言 1
1-2微影製程技術 2
1-2-1 光微影技術 2
1-2-2 掃描式探針微影術 3
1-2-3 X-ray微影術 3
1-2-4 電子束微影術 4
1-3奈米球微影術 4
1-3-1 奈米球自組裝技術 5
1-3-2 自然滴製法(Drop Coating) 5
1-3-3 旋轉塗佈法(Spin Coating) 5
1-3-4 液面自組裝轉附技術 6
1-4奈米球微影技術製備各式奈米結構 6
1-4-1 奈米球微影術結合金屬薄膜沉積技術 6
1-5金屬矽化物製程 7
1-5-1 金屬矽化物的應用及製程 7
1-5-2 鈦、鈷金屬矽化物 8
1-5-3 鎳金屬矽化物 10
1-6離子佈植技術 10
1-6-1 離子佈植之非晶化 11
1-6-2 不同佈植離子種類對矽化物生成反應之影響 11
1-6-3 金屬薄膜與非晶矽界面反應 12
1-7研究動機 13
第二章 實驗步驟及儀器分析 15
2-1 奈米球模板之製備 15
2-1-1 基材使用前處理 15
2-1-2 奈米球膠體溶液配置 16
2-1-3 自組裝奈米球陣列 16
2-2 大面積鎳金屬矽化物奈米點陣列之製備 17
2-2-1 金屬薄膜蒸鍍 17
2-2-2 奈米球舉離 17
2-2-3 熱退火處理 17
2-3 使用儀器及特性分析 18
2-3-1 掃描式電子顯微鏡 18
2-3-2 穿透式電子顯微鏡 18
第三章 結果與討論 19
3-1單層奈米球陣列模板之製備 19
3-1-1液面自組裝轉附技術 19
3-1-2鎳金屬奈米點陣列之製備 20
3-2 鎳矽化物奈米點陣列與氮氣離子佈植非晶矽界面反應 20
3-2-1 氮氣離子佈植非晶矽基材製備鎳矽化物點陣之形貌觀察21
3-2-2 鎳矽化物奈米點陣與氮氣離子佈植非晶矽基材之相鑑定分析 22
3-3-3 鎳矽化物相轉換與氮氣離子佈植非晶矽基材間晶體結構分析 25
3-3氮氣離子佈植非晶矽基材生成鎳矽化物奈米點陣之形貌變化及相轉換27
3-4 鎳金屬於氮氣離子佈植濃度1×1015dose/cm2非晶矽基材間界面反應 29
第四章 結論 31
參考文獻 33
表目錄 44
圖目錄 47
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指導教授 鄭紹良(Shao-Liang Cheng) 審核日期 2016-8-26
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