探討微奈米結構圖形化藍寶石基板對覆晶 LED 晶片的萃取效率之影響

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姓名

林憲璋(Hsien-Chang Lin) 查詢紙本館藏

畢業系所

光機電工程研究所

論文名稱

探討微奈米結構圖形化藍寶石基板對覆晶 LED 晶片的萃取效率之影響

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摘要(中)

發光二極體（LED）晶片的界面菲涅爾效應會限制其光的萃取率，
藉由圖形化LED晶片中的異質材料的接合界面，可有效抑制其界面菲
涅爾效應，因而提高光萃取率。本論文主要探討LED晶片之藍寶石基
板圖形化的奈微米圖形結構之設計技術。我們將奈微米圖形結構尺寸
分成三個範圍，並考慮分別使用有限時域差分法（FDTD）、嚴格耦
合波分析（RCWA）與蒙地卡羅光線追跡法等演算法的三種模擬工具，
來探討與分析藍寶石基板圖形化的奈微米圖形結構的模擬演算法的
應用問題與適用度。根據研究結果顯示，適當模擬演算法的選用與適
用模擬演算法的工具之參數設定，對LED晶片的奈微米圖形結構設計
影響很大，且每件結構模擬的時間差異也很大。我們的研究結果可提
供圖形化LED晶片中異質材料的接合界面之奈微米圖形結構的可靠
的、有效率的模擬參考。我們也分析了奈米到微米範圍的奈微米半球
結構對覆晶式LED晶片的光萃取率影響，模擬發現在奈米以及微米尺
寸在高寬比0.8 時，能達到最佳的光萃取率。

摘要(英)

The light-extraction efficiency of light-emitting diodes (LEDs) is strictly limited by the Fresnel reflection. The patterned sapphire substrate technique can reduce the Fresnel reflection and enhance the light extraction
efficiency. In this thesis, the size range of patterned structure is considered from a few microns to hundreds of nanometers. To obtain fast and accurate simulation, three simulation algorithms: finite time difference domain,
rigorous coupled-wave analysis and Monte carlo ray tracing method are considered and found the preferred range of applications. The results show that appropriate simulation algorithms and parameter settings of simulation tools have obvious influence on simulation time and simulation accuracy. We also analyze influence of sphere-shape nano-patterned and micronpatterned sapphire substrate on LED, and we found that the largest light extraction efficiency can be obtained when the aspect ratio is 0.8.

關鍵字(中)

★ 有限時域差分法
★ 嚴格耦合波分析
★ 蒙地卡羅光線追跡法

關鍵字(英)

★ Finite time difference domain
★ Rigorous coupled-wave analysis
★ Monte carlo ray tracing method

論文目次

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VIIII
表目錄 ΧI
一、緒論 1
1-1 前言 1
1-2 研究背景 1
1-1 研究動機與目的 2
1-1 論文架構 4
二、LED光學特性分析 6
2-1 LED發光原理 6
2-2 LED發光效率 9
2-3 LED光萃取效率機制 10
2-3-1全反射損耗 11
2-3-2 Fresnel損耗 12
2-4 LED光萃取率結構設計 13
2-4-1 晶粒外型 13
2-4-2 半導體表面粗化 15
2-4-3 圖形化藍寶石基板 16
2-4-4 覆晶封裝 17
三、數值模擬方法 19
3-1 有限時域差分法 19
3-1-1 馬克斯威爾方程式 19
3-1-2 FDTD方程式 19
3-1-3 三維FDTD方程式 22
3-1-4 邊界條件 24
3-2 嚴格耦合波分析法 26
3-3 蒙地卡羅光線追跡法 32
四、模擬方法設定與分析 33
4-1 奈米級圖形化藍寶石基板 33
4-1-1 RCWA模擬圖形化藍寶石基板與空氣端界面 35
4-1-2 FDTD模擬圖形化藍寶石基板與空氣端界面 47
4-1-3 FDTD模擬覆晶LED 光萃取效率 51
4-1-4 RCWA模擬覆晶LED 光萃取效率 57
4-2 微米級圖形化藍寶石基板 63
4-2-1 蒙地卡羅光線追跡法模擬覆晶LED光萃取效率 64
五、PSS結構參數探討 65
5-1 結構參數設定 66
5-2 模擬結果 66
六、結論與未來展望 69
6-1 結論 69
6-2 未來展望 70
參考文獻 70

參考文獻

[1]Round, H. J. (1907). A note on carborundum. Electrical world, 49(6), 309.
[2]Destriau, G. (1936). Experimental studies on the action of an electric field on phosphorescent sulfides. J. chem. Phys, 33, 620.
[3]Holonyak Jr, N., & Bevacqua, S. F. (1962). Coherent (visible) light emission from Ga (As1? xPx) junctions. Applied Physics Letters, 1(4), 82-83.
[4]Allen, J. W., Moncaster, M. E., & Starkiewicz, J. (1963). Electroluminescent devices using carrier injection in gallium phosphide. Solid-State Electronics, 6(2), 95-102.
[5]Grimmeiss, H. G., & Scholz, H. (1964). Efficiency of recombination radiation in GaP. Physics Letters, 8(4), 233-235.
[6]Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986). Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Applied Physics Letters, 48(5), 353-355.
[7]Koide, Y., Itoh, N., Itoh, K., Sawaki, N., & Akasaki, I. (1988). Effect of AlN buffer layer on AlGaN/α-Al2O3 heteroepitaxial growth by metalorganic vapor phase epitaxy. Japanese journal of applied physics, 27(7R), 1156.
[8]Nakamura, S., Mukai, T., & Senoh, M. (1994). High?brightness InGaN/AlGaN double?heterostructure blue?green?light?emitting diodes. Journal of Applied Physics, 76(12), 8189-8191.
[9]Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S. I., Yamada, T., & Mukai, T. (1995). Superbright green InGaN single-quantum-well-structure light-emitting diodes. Japanese Journal of Applied Physics, 34(10B), L1332.
[10]Shimizu, Y., Sakano, K., Noguchi, Y., & Moriguchi, T. (1999). U.S. Patent No. 5,998,925. Washington, DC: U.S. Patent and Trademark Office.
[11]Yole development: In the LED packaging world, Flip Chip technology is rising，2014年10月，取自 http://www.yole.fr/iso_upload/News/2014/PR_LpS_YOLE%20DEVELOPPEMENT_Sept2014.pdf
[12]Ohya, M., Naniwae, K., Kondo, T., Suzuki, A., Mori, M., Kitano, T., ... & Kamiyama, S. (2015). Improvement of vertical light extraction from GaN?based LEDs on moth?eye patterned sapphire substrates. physica status solidi (a), 212(5), 935-940.
[13]Shen, C. F., Chang, S. J., Chen, W. S., Ko, T. K., Kuo, C. T., & Shei, S. C. (2007). Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate. IEEE Photonics Technology Letters, 19(10), 780-782.
[14]Su, Y. K., Chen, J. J., Lin, C. L., Chen, S. M., Li, W. L., & Kao, C. C. (2009). Pattern-size dependence of characteristics of nitride-based LEDs grown on patterned sapphire substrates. Journal of Crystal Growth, 311(10), 2973-2976.
[15]Kondo, T., Kitano, T., Suzuki, A., Mori, M., Naniwae, K., Kamiyama, S., ... & Akasaki, I. (2014). Advantages of the moth?eye patterned sapphire substrate for the high performance nitride based LEDs. physica status solidi (c), 11(3?4), 771-774.
[16]Pan, J. W., Tsai, P. J., Chang, K. D., & Chang, Y. Y. (2013). Light extraction efficiency analysis of GaN-based light-emitting diodes with nanopatterned sapphire substrates. Applied optics, 52(7), 1358-1367.
[17]Kang, H. J., Cho, S. U., Kim, E. S., Kim, C. S., & Jeong, M. Y. (2013). Improving light-emitting diode performance through sapphire substrate double-side patterning. Optical Engineering, 52(2), 023002-023002.
[18]Zhu, P., Liu, G., Zhang, J., & Tansu, N. (2013). FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays. Journal of Display Technology, 9(5), 317-323.
[19]Schubert, E. F., Gessmann, T., & Kim, J. K. (2005). Light emitting diodes. John Wiley & Sons, Inc..
[20]Krames, M. R., Ochiai-Holcomb, M., Hofler, G. E., Carter-Coman, C., Chen, E. I., Tan, I. H., ... & Stockman, S. A. (1999). High-power truncated-inverted-pyramid (AlxGa1? x) 0.5 In0. 5P/GaP light-emitting diodes exhibiting> 50% external quantum efficiency. Applied physics letters, 75(16), 2365-2367.
[21]Schnitzer, I., Yablonovitch, E., Caneau, C., Gmitter, T. J., & Scherer, A. (1993). 30% external quantum efficiency from surface textured, thin?film light?emitting diodes. Applied Physics Letters, 63(16), 2174-2176.
[22]Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., & Nakamura, S. (2004). Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Applied physics letters, 84(6), 855-857.
[23]Krames, M. R., Shchekin, O. B., Mueller-Mach, R., Mueller, G. O., Zhou, L., Ha7,1881-1886 (2005).
31. H. Fukumoto and Y. Yonezawa, “Layer-by-layer self-assembly of
polyelectrolyte and water soluble cyanine dye”, Thin Solid Films,
vol. 327, pp. 748-751, (1998).

指導教授

陳奇夆(Chi-Feng Chen)

審核日期

2017-1-25

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