博碩士論文 103521037 詳細資訊




以作者查詢圖書館館藏 以作者查詢臺灣博碩士 以作者查詢全國書目 勘誤回報 、線上人數:16 、訪客IP:3.237.66.86
姓名 王聖博(Sheng-Po Wang)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 P型金屬氧化物薄膜的製備應用於軟性電子
(Fabrication of P-Type Metal Oxide Thin Film for Flexible Electronics)
相關論文
★ 以熱熔異質磊晶成長法製造之鍺光偵測器★ 在SOI基板上以快速熱熔法製造高品質鍺及近紅外線光偵測元件之研製
★ 鉭錳合金及銅鍺化合物應用於積體電路後段製程中銅導線之研究★ 快速熱熔磊晶成長法製造側向PIN(Ge-Ge-Si)光偵測器
★ 二維薄膜及三維塊材Seebeck係數量測★ 塊材、薄膜與奈米線之熱導係數量測方法探討
★ 以快速熱熔異質磊晶成長法製作鍺矽累增型光偵測器★ 以快速熱熔融磊晶成長法製作 鍺錫合金PIN型光偵測器
★ 利用火花電漿燒結法製備以矽為基底之奈米材料於熱電特性上之應用研究★ 金屬氧化物製備應用於軟性電子元件
★ 超導材料釔鋇銅氧化物熱電特性量測分析★ 鎂矽錫合金熱電特性研究及應用
★ 矽基熱電模組開發及特性研究★ P型金屬氧化物與硫化物之研究
★ 物聯網之熱感測器應用★ P型金屬氧化物與硫化物合金薄膜之研究
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   至系統瀏覽論文 ( 永不開放)
摘要(中) 2005年的IEEE會議上提出了軟性電子的概念,希望能透過更加人性化的設計有效解決不易攜帶或硬質基板碎裂等議題。近年來,穿戴式電子產品的興盛毫無疑問地是引起了熱潮,軟性電子也勢必朝著輕、薄及透明等方面發展,然而,最常用於透明薄膜的ITO卻有著資源即將短缺等不穩定因素,使得資源豐富的氧化鋅成為炙手可熱的研究對象,因此,本論文也將氧化鋅選作為研究對象。
本研究著重於製備p-type氧化鋅粉末,透過熱擴散方式以五氧化二磷選作為摻雜物分別於不同溫度與環境下,並分析粉末之晶格特性以及元素比例,將粉末熱壓成靶材後濺鍍薄膜,以霍爾量測確定薄膜特性。本研究成功製備了p-type氧化鋅粉末,然而,其特性仍不夠理想,希望以這次實驗做為往後改善氧化鋅粉末摻雜之基石。
摘要(英) In 2005, IEEE conference brought out the idea of flexible electronics, that could be much more humanity to solve the problem of rigid substrate fragmentation or hard to carry and other issues. Last few years, the rise of wearable electronics is undoubtedly caused a boom and flexible electronics will also bound towards more light, thin, transparent and other aspects of development. ITO, the most commonly used in transparent film, lacks in resources and is unstable. However, zinc oxide, that is resource-rich, becomes more popular in study. Therefore, the modulation doping of zinc oxide is the research object in this paper.
This study focuses on the preparation of p-type zinc oxide powder doped by phosphorus pentoxide through thermal diffusion manner at different temperatures and environment. P-type zinc oxide powders were achieved. Subsequently, analysis the characteristics on the powders were carried out before hot pressing to make the bulk target and the sputtering process to study film properties by Hall measurement and Fourier transform infrared spectroscopy.
關鍵字(中) ★ 金屬氧化物
★ 氧化鋅
關鍵字(英) ★ Metal Oxide
★ Zinc Oxide
論文目次 摘要..................................I
ABSTRACT.............................II
致謝................................III
目錄.................................IV
圖目錄...............................VI
第一章 簡介與研究動機.................1
1-1 前言..............................1
1-2 研究動機與目的....................2
第二章 理論基礎與文獻回顧...............4
2-1 氧化鋅之晶體特性及應用..............4
2-2 氧化鋅摻雜.........................5
2-3 熱擴散摻雜原理......................6
2-4 粉末熱壓...........................6
第三章 實驗流程與儀器設備...............8
3-1實驗流程............................8
3-2 實驗製程方法.......................9
3-3 實驗儀器...........................11
第四章 實驗結果與結論...................23
4-1 粉末分析...........................23
4-2 薄膜特性分析.......................24
4-3 結論與未來展望.....................25
參考文獻..............................36
參考文獻 [1] 吳奕儒,可撓式面板基板製程期待突破,光電科技工業協進會,p47-p49

[2] 白世南,林鴻達,吳世全,溶膠-凝膠法製備氧化鋅薄膜於PES可撓式基板之特性研究,建國科技大學電子工程系暨研究所,財團法人國家實驗研究院國家奈米元件實驗室,p1-p5

[3] G. Auer, W.D. Griebler, B. Jahn, Industrial Inorganic Pigments, 3rd ed., Wiley VCH Verlag GmbH & Co. KGaA, Weinheim, 2005

[4] Wiberg, E. and Holleman, A. F. Inorganic Chemistry. Elsevier. 2001. ISBN 0-12-352651-5

[5] Gul Amin,“White LEDs Printed on Paper-A Doctoral Thesis─Part I”, August 06, 2012, EDN network

[6] Ü . Ö zgür, J. Appl.Phys, 98, 041301, 2005.

[7] S. B. Zhang, S.-H. Wei, and Alex ZungerPhys. Rev. B 63, 075205

[8] Kazunori Minegishi, Yasushi Koiwai, Yukinobu Kikuchi, Koji Yano,Masanobu Kasuga, and Azuma Shimizu, Jpn. J. Appl. Phys. 36 (1997)L1453.

[9] Woo-Jin Lee, Joongoo Kang, K.J. Chang, Physica B, 376-377 (2006)699.

[10] Xin-Li Guo, Hitoshi Tabata, Tomoji Kawai, J. Cryst. Growth, 223(2001) 135.

[11] M. Joseph, H. Tabata, and T. Kawai, Appl. Phys. Lett. 74 (1999)2534.

[12] Z.Z Zhang, Z.P. Wei, Y.M. Lu, J.Cryst. Growth, 301-302, 362-365,2007

[13] S. Kandasamy, W. Wlodarski, A. Holland, S. Nakagomi, Y. Kokubun, Appl. Phys. Lett., 90, 064103(2007)

[14] J. Lim, K. Shin, C. Lee, Journal of materials science, 39 (2004) 3195.

[15] K. Nakahara, H. Takasu, P. Fons, A. Yamada, K. Iwata, K.Matsubara, R. Hunger, S. Niki, J. Cryst. Growth, 237-239 (2002) 503.

[16] Jong Kyu Kim, Jong-Lam Lee, Jae Won Lee, Yong Jo Park, andTaeil Kim, J. Vac. Sci. Technol. B, 17 (1999) 497.
[17] K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, S. J. Park, Appl. Phys.Lett. 83 (2003) 63.

[18] C. H. Park, S. B. Zhang, and Su-Huai Wei, Phys. Rev. B, 66 (2002)073202.

[19] N. Xu,_ Y. Xu, L. Li, Y. Shen, T. Zhang, J. Wu, J. Sun, Z. Ying, J.Vac. Sci. Technol. A24(3) (2006) 517.

[20] Tamiko Ohshima, Tomoaki Ikegami, Kenji Ebihara, Jes Asmussen,RajK. Thareja, Thin Solid Films, 435 (2003) 49.

[21] Y. R. Ryu, T. S. Lee, H. W. White, Appl. Phys. Lett. 83 (2003) 87.

[22] N.T. Houng, N.V. Tuyen, N.H. Hong, Materials Chemistry and Physics 126 (2011) 54-57

[23] 劉傳習、解子章、李月珠, 粉末冶金成形,中國大百科全書,1993年(簡體版),2001 年(繁體版)

[24]B. Joseph et al. Ceramics International 32(2006)487-493

[25]Yadav et al., J. Appl. Phys. 99, 083507 (2006)

[26] X. Zi-qiang, D. Hong, L. Yan, C. Hang, Materials Science in Semiconductor Processing 9,132-135(2006)

[27]H. Gomez, A. Maldonado, R. Castanedo-Perez, G. Torres-Delgado b, M. de la L.Olvera, Materials Characterization 58,708-714(2007)

[28] S. B. Zhang, S.-H. Wei, and Alex Zunger, Phys. Rev. B, 63 (2001)
75205.

[29] H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G.
Biehne, M. Lorenz, M. Grundmann, and G. Brauer, Appl. Phys. Lett. 89
(2006) 092122.

[30] T. V. Butkhuzi, A. V. Bureyev, A. N. Georgobiani, N. P. Kekelidze,
and T.G. Khulordava, J. Cryst. Growth, 117 (1992) 366.

[31] L. D. Hicks., T. C. Harman., X. Sun. and M. S. Dresselhaus.,“Experimental study of the effect of quantum-well structures on the thermoelectric figure of merit”,Phys. Rev. B, 53, R10493 (1996)

[32] C. Dames. and G. Chen.,“Theoretical phonon thermal conductivity of Si/Ge superlatticenanowires” J. Appl. Phys., 95, 682 (2004)

[33] D. M. T. Kuo. and Y. C. Chang., “Thermoelectric and thermal rectification properties of quantum dot junctions” Phys. Rev. B, 81, 205321 (2010)

[34]Hadis Morkoç and Ümit Özgur,“Zinc Oxide: Fundamentals, Materials and Device Technology”(2009)

[35]何建志,摻雜鋁之 P-type 氧化鋅薄膜特性分析,國立台北科技大學光電工程系研究所碩士論文(2007)
指導教授 辛正倫(Chung-Lun Hsin) 審核日期 2016-10-12
推文 facebook   plurk   twitter   funp   google   live   udn   HD   myshare   reddit   netvibes   friend   youpush   delicious   baidu   
網路書籤 Google bookmarks   del.icio.us   hemidemi   myshare   

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明