以快速熱熔融磊晶成長法製作 鍺錫合金PIN型光偵測器

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姓名

李翼丞(Yi-Cheng Li) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

以快速熱熔融磊晶成長法製作鍺錫合金PIN型光偵測器
(GeSn PIN Photodetector on Silicon Substrate by Rapid-Melting-Growth Technique)

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摘要(中)

隨著光纖通訊系統迅速發展，矽鍺整合技術逐漸應用於電子元件與光電元件
，利用鍺的高電子及電洞遷移率與窄能帶的優點，很適合做為近紅外光偵測器。而在許多參考文獻中提到當鍺材料加入少量的錫元素，隨著錫濃度的改變，可以使鍺間接能隙材料轉換為鍺錫合金直接能隙材料，並證實在長波長下有更好的吸收係數，且提高其光響應率。但鍺錫合金整合於矽基板上存在著困難，因鍺錫合金與矽之間存在4.2％以上的晶格不匹配且鍺與錫之間有著低固態溶解度，所以一般會將鍺錫合金直接磊晶於矽基板上，但此方法需使用昂貴的超高真空機台，且磊晶成長慢、所需時間長，付出的製程成本相對來的大。
本論文以快速熱熔融磊晶成長法作為基本架構，並改良傳統的快速熱熔融磊晶成長法，將省略晶種視窗區，採用兩段式快速熱退火，期望有效得到良好的高品質鍺錫合金，再以此磊晶成長法製作垂直式PIN型鍺錫合金光偵測器，而此磊晶方法較一般高真空機台更簡單快速且可降低成本。最後使用1310nm與1550nm波段的雷射光進行光暗電流的直流量測分析，並利用SEM、TEM及Raman光譜進行材料分析。

摘要(英)

With the rapid development of optical fiber communication systems, the integration of germanium with silicon has attracted much attention for both electronic and photonic devices, taking the advantage of narrow band gap as well as high electron and hole mobility. On the other hand, germanium tin(GeSn) alloys was expected to improve the photo-response of a near-infrared photodetector. However the growth of single-crystalline GeSn alloys on silicon is very challenging because of the low equilibrium solubility (<1%) of Sn in Ge and the large lattice mismatch（greater than 4.2％）between silicon and GeSn alloys. Therefore, traditional GeSn alloys grown on silicon rely on ultra-high-vacuum chambers, which are expensive and time-consuming.
In this article, we use rapid-melting-growth technique to grow GeSn alloys on silicon substrate, expect to get high-quality GeSn alloys. The as-grown GeSn alloys were employed for PIN photodetector devices. At the last, physical characteristics, including the I-V behavior, photoresponsibility, and materials quality were investigated by electrical analyzer, SEM, TEM and Raman spectroscopy.

關鍵字(中)

★ 快速熱熔融磊晶成長法

關鍵字(英)

論文目次

中文摘要............................................i
英文摘要...........................................ii
致謝...............................................iii
目錄...............................................iv
第一章簡介........................................1
1-1論文架構.........................................1
1-2光纖通訊基本架構..................................1
1-3光偵測器的原理....................................3
1-4矽鍺光偵測器的優勢..............................7
第二章使用快速熱熔融磊晶成長法製作鍺錫合金光偵測器之設計原理.......8
2-1本論文研究動機及目的...................................8
2-2錫合金探討............................................9
2-3快速熱熔融磊晶成長法.................................12
第三章使用快速熱熔融磊晶成長法製作鍺錫合金光偵測器之實驗設計與製作流程.............................................13
3-1 前言..............................................13
3-2實驗設計...........................................16
3-3元件製程流程與細節..................................17
第四章快速熱熔融磊晶成長法製作鍺錫合金之實驗分析.........27
4-1鍺錫合金光偵測器量測分析.............................27
4-2 鍺錫合金光偵測器材料分析............................31
4-2-1鍺錫薄膜拉曼光譜分析...............................31
4-2-2 鍺錫薄膜不同波段之吸收率分析.......................32
4-2-3 鍺錫合金光偵測器元件SEM與TEM分析...................33
4-3 30奈米鍺錫薄膜材料分析..............................36
第五章快速熱熔融磊晶成長法製作鍺錫合金之實驗結論..........39
參考文獻...............................................40

參考文獻

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指導教授

辛正倫(Cheng-Lun Hsin)

審核日期

2016-10-12

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