博碩士論文 103521041 詳細資訊




以作者查詢圖書館館藏 以作者查詢臺灣博碩士 以作者查詢全國書目 勘誤回報 、線上人數:8 、訪客IP:34.204.191.31
姓名 劉鎮瑋(Zhen-Wei Liu)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 氮化鎵異質接面場效電晶體之電流崩塌和熱儲存研究
相關論文
★ 電子式基因序列偵測晶片之原型★ 增強型與空乏型砷化鋁鎵/砷化銦鎵假晶格高電子遷移率電晶體: 元件特性、模型與電路應用
★ 使用覆晶技術之微波與毫米波積體電路★ 注入增強型與電場終止型之絕緣閘雙極性電晶體佈局設計與分析
★ 以標準CMOS製程實現之850 nm矽光檢測器★ 600 V新型溝渠式載子儲存絕緣閘雙極性電晶體之設計
★ 具有低摻雜P型緩衝層與穿透型P+射源結構之600V穿透式絕緣閘雙極性電晶體★ 雙閘極金氧半場效電晶體與電路應用
★ 空乏型功率金屬氧化物半導體場效電晶體 設計、模擬與特性分析★ 高頻氮化鋁鎵/氮化鎵高速電子遷移率電晶體佈局設計及特性分析
★ 氮化鎵電晶體 SPICE 模型建立 與反向導通特性分析★ 加強型氮化鎵電晶體之閘極電流與電容研究和長時間測量分析
★ 新型加強型氮化鎵高電子遷移率電晶體之電性探討★ 離子佈植砷化鎵金屬半導體場效電晶體之研究
★ 碰撞游離係數的量測及其在異質接面雙極性電晶體之設計應用★ 磷化銦鎵/砷化鎵異質接面雙極性電晶體之研製及其集極調變對元件特性的影響
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載]
  1. 本電子論文使用權限為同意立即開放。
  2. 已達開放權限電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。
  3. 請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。

摘要(中) 氮化鎵材料因為具有快速的電子飽和速度與高崩潰電場,使得氮化鎵元件非常適合製作低串聯電組與高崩潰電壓的元件,主要應用在商業化 RF power amplification 和 HV power switching中。但氮化鋁鎵/氮化鎵在磊晶過程中會產生一些缺陷,這些缺陷會造成電流崩塌現象,對電晶體做為切換開關或是不同頻率操作下,是非常嚴重的問題。本論文將利用商業製程元件進行一系列元件的電流崩塌現象測量分析,並進一步深入討論缺陷所在跟元件特性關聯。
本論文選用穩懋半導體且其閘極長度為0.25 µm的HEMT元件進行研究。建立等校電路模型以萃取小訊號參數,並以動態量測方法經過關閉狀態後進入開啟狀態,觀察發生電流崩塌時小訊號參數變化,可以發現到其中源極電阻(Rs)、閘極與汲極間電容(CGD) 等內部元件參數在偏壓後有顯著的變化。
最後除了進行不同溫度下的小訊號參數測試研究外,進一步討論電流崩塌跟溫度的關聯性。還設計了在高溫下(150°C)進行熱儲存(Thermal Storage),改變熱儲存之時間以觀察元件電性的改變。
摘要(英) GaN based devices are suitable candidates of low on resistance and high breakdown device because of high electron velocity and breakdown field in GaN materials. The major applications include RF power amplifiers and power switching. However, there is a serious current collapse problem when transistor operated as a switch in high frequencies. The main cause is due to epitaxial layer quality, which effects in AlGaN/GaN and buffer layers act like traps which traps carriers and results in current collapse leading to a great impact on the DC and RF characteristics. This study analyzes device current collapse phenomenon using commercial GaN HEMT in small-signal model and gate-lag/drain-lag measurement.
In small signal equivalent circuit modeling, extracted values of intrinsic elements in leaner and saturation regions were compared after different high-voltage off-state biases. The significant change in the intrinsic elements after high-voltage off-state biases are channel resistance (Rds) and gate-drain capacitance (Cgd), which may attribute to the GaN channel and buffer layers. Besides, small signal equivalent circuit model after high-voltage off-state was investigated under different temperatures.
Gate-lag and drain-lag were measured at different temperatures to study the trapping effect. Because of temperature effect, trapping effect is alleviated at higher temperature thus current collapse is less severe. . Finally, a thermal storage was carried out on GaN HEMTs at 150 C under room temperature ambient. No degradation was found after 55 hours storage.
關鍵字(中) ★ 氮化鎵
★ 場效電晶體
關鍵字(英)
論文目次 中文摘要 I
Abstract II
目錄 III
圖目錄 VI
表目錄 VIII
第一章緒論 1
1.1 前言 1
1.2 氮化鎵材料特性 2
1.3 氮化鎵功率元件發展概況 4
1.4 本論文研究動機與架構 5
第二章 電流崩塌效應與可靠度分析 6
2.1 前言 6
2.2 電流崩塌效應 6
2.3 可靠度分析 14
2.4 結論 25
第三章 氮化鋁鎵/氮化鎵HEMTs之動態特性分析 26
3.1 前言 26
3.2 電流崩塌效應分析 26
3.2.1建立小訊號等效模型 27
3.2.2 線性區與飽和區之動態特性 35
3.2.3 變溫之動態特性量測 42
3.3 變溫之脈衝量測與分析 49
3.4 結論 56
第四章 熱儲存分析 58
4.1前言 58
4.2熱儲存(Thermal Storage)分析 58
4.3 結論 62
第五章 結論與未來展望 63
參考文獻 64
參考文獻 [1] Guerra and J. Zhang, “New Design Proposals for High-Power Renewable Energy Applications” Power electronic Europe, issue 4, 2010.
[2] RAPHAEL BROWN“A novel AlGaN/GaN based enhancement-mode high electron mobility transistor with sub-critical barrier thickness.”PhD . A thesis submitted in partial fulfillment for the degree of Doctor of Philosophy in the School of Engineering University of Glasgow, 2015
[3] Yi Zhou , Dake Wang , Claude Ahyi , Chin-Che Tin , John Williams , Minseo Park ,N. Mark Williams b, Andrew Hanser “High breakdown voltage Schottky rectifier fabricatedon bulk n-GaN substrate”Solid-State Electronics 50 pp. 1744–1747, 2006
[4] Khan M A.Bhattarai A.Kuznia J N “High electron mobility transistor based on a GaN-AlGaN heterojunction” Appl. Phys. Lett. 63, 1214, 1993
[5] M.A.Khan, M.S.Shur, Q.C.Chen, and J.N.Kuznia,“Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias,” Electronics Letters ,vol: 30, issue: 25, 8 1994
[6] Davide Bisi, Matteo Meneghini, Carlo de Santi, Alessandro Chini, Michael Dammann,Peter Brückner, Michael Mikulla, Gaudenzio Meneghesso, “Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements” IEEE Trans. Electron Devices., vol. 60, no. 10, pp.3166-3175, 2013.
[7] Davide Bisi, Matteo Meneghini, Marleen Van Hove, Denis Marcon, Steve Stoffels, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni “Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate” Phys. Status Solidi A 212, no. 5, pp. 1122–1129, 2015
[8] S.C. Binari , P.B. Klein and T.E. Kazior “Trapping effects in GaN and SiC microwave FETs”Proceedings of the IEEE Vol: 90, Issue: 6, pp. 1048-1058, 2002
[9] S. Huang, Q. Jiang, K. Wei, G. Liu, J. Zhang, X. Wang, Y. Zheng, B. Sun, C. Zhao, H.
Liu, Z. Jin,X. Liu, H. Wang, S. Liu, Y. Lu, C. Liu, S. Yang, Z. Tang, J. Zhang, Y. Hao,
and Kevin J. Chen, “High-Temperature Low-Damage Gate Recess Technique and
Ozone-Assisted ALD-grown Al2O3 Gate Dielectric for High-Performance Normally-
Off GaN MIS-HEMTs,” International Electron Devices Meeting, pp.17.4.1-17.4.4, 2014.
[10] R. Vetury, N.Q. Zhang, S. Keller, and U.K. Mishra, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp.560-566, 2001.
[11] D. Jin and Jesus A. del Alamo, “Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs,” in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, 2012.
[12] O. Mitrofanov and M. Manfra, "Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors," Superlattices and Microstructures, vol. 34, pp. 33-53, 2003.
[13] O. Mitrofanov and M. Manfra, "Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy," Applied Physics Letters, vol. 84, pp. 422-424, 2004.
[14] O. Mitrofanov and M. Manfra, "Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors," Journal of Applied Physics, vol. 95, pp. 6414-6419, 2004.
[15] Vetury, R., Zhang, N.Q. , Keller, Stacia , Mishra, Umesh K ,“The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs,” IEEE Transactions Electron Devices, vol. 48, no. 3, pp. 560-566, 2001.
[16] Yuanzheng Yue, Yue Hao, Jincheng Zhang, Jinyu Ni, Wei Mao, Qian Feng and Linjie Liu, “AlGaN/GaN MOS-HEMT With HfO2 Dielectric and Al2O3 interfacial passivation layer Grown by atomic layer deposition,” IEEE Electron Device Lett., vol. 29, no 8, pp. 838-840, 2008.
[17] Liang Pang, Yaguang Lian, Dong-Seok Kim, Jung-Hee Lee and Kyekyoon Kim, “AlGaN/GaN MOSHEMT with High-Quality Gate-SiO2 Achieved by Room-Temperature Radio Frequency Magnetron Sputtering,” IEEE Trans. Electron Devices, vol. 59, no. 10, pp. 2650-2655, 2012.
[18] T. Lalinsky´, G. Vanko, M. Vallo, E. Dobrocˇka, I. Ry´ger, and A. Vincze, “AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation,” Appl. Phys. Lett., 100, 092105, 2012.
[19] Han-Yin Liu, Bo-Yi Chou, Wei-Chou Hsu, Ching-Sung Lee, Jinn-Kong Sheu, and Chiu-Sheng Ho, “Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydroden Peroxide Oxidation Technique,” IEEE Trans. Electron Devices., vol. 60, no. 1, pp. 213-219, 2013.
[20] Goutam Koley, Student Member, IEEE, Vinayak Tilak, Lester F. Eastman, Fellow, IEEE, and Michael G. Spencer“Slow Transients Observed in AlGaN/GaN HFETs:Effects of SiNx Passivation and UV Illumination” IEEE Transactions on Electron Devices, vol. 50, no. 4, pp.886-893, 2003
[21] J. W. Chung, J. C. Roberts, E. L. Piner, and T. Palacios, “Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs”IEEE Electron Device Lett. vol: 29, issue: 11, pp.1196-1198, 2008.
[22] S. Linkohr, W. Pletschen, V. Polyakov, M. Himmerlich, P. Lorenz, S. Krischok, L. Kirste, S. Müller, O. Ambacher, and V. Cimalla, “Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures”Phys. Status Solidi vol. 9, Issue 3-4, pp.1096-1098, 2012.
[23] S. Linkohr, W. Pletschen, L. Kirste, M. Himmerlich, P. Lorenz, S. Krischok, V. Polyakov, S. Müller, O. Ambacher, and V. Cimalla,“Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs”Phys. Status Solidi vol. 9, Issue 3-4, pp.938-941, 2012.
[24] M.-F. Romero, A. Jiménez, F. G.-P. Flores, S. Martín-Horcajo, F. Calle, and E. Muñoz, “Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance” IEEE Transactions on Electron Devices, vol. 59, no. 2, pp.374-379, 2012.
[25] Z. T. Chen, K. Fujita, and T. Egawa,“Pd/InAlN Schottky diode with low reverse current by sulfide treatment” Appl. Phys. Lett. 99, pp. 183504, 2011.
[26] G. Vanko, T. Lalinský, Š. Haščík, I. Rýger, Ž. Mozolová, J. Škriniarová, M. Tomáška, I. Kostič, and A. Vincze,“Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT” Vacuum , Volume 84, Issue 1, pp. 235–237, 2009,
[27] Shuxun Lin, Maojun Wang, Member, IEEE, Bing Xie, Cheng P. Wen, Life Fellow, IEEE, Min Yu, Jinyan Wang,Yilong Hao, Wengang Wu, Member, IEEE, Sen Huang, Kevin J. Chen, Fellow, IEEE, and Bo Shen “Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment” IEEE Electron Device Letters, vol. 36, no. 8, pp.757-759, 2015
[28] Jimenez JL, Chowdhury U. “X-band GaN FET reliability.”IEEE int. rel. phys. symp. proceedings; pp.429-435, 2008.
[29] C . CANALI, F . CASTALDO, F. FANTINI, D. OGLIARI, L. UMENA, AND E. ZANONI,” Gate Metallization “Sinking” into the Active Channel in TilWlAu Metallized Power MESFET’s” Electron Device Letters, vol. 7, no.3, pp.185-187, 1986.
[30] Y.C. Chou , D. Leung, I. Smorchkova, M. Wojtowicz, R. Grundbacher, L. Callejo, Q. Kan, R. Lai, P.H. Liu, D. Eng, A. Oki“Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting”Microelectronics Reliability 44, pp.1033–1038, 2004.
[31] Singhal, S.; Roberts, J.C.; Rajagopal, P; Li, T.; Hanson, A.W.; Therrien, R.; Johnson, J.W.; Kizilyalli, J.; Linthicum, K.J. “GaN-on-Si failure mechanisms and reliability improvements.” Proceeding of 44th Annual IEEE International Reliability Physics Symposium, San Jose, CA, USA, 26–30 2006.
[32] Piazza, M.; Dua, C.; Oualli, M.; Morvan, E.; Carisetti, D.; Wyczisk, F. “Degradation of TiAlNiAu as Ohmic contact metal for GaN HEMTs.” Microelectron. Reliab. vol 49, issues 9–11, pp. 1222–1225, 2009
[33] Joh, J.; del Alamo, J.A. “Mechanisms for electrical degradation of GaN high-electron mobility transistors.”Proceeding of IEDM ′06 International Electron Devices Meeting, San Francisco, CA, USA, 11–13, 2006.
[34] Sarua, A. “Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias.”Appl. Phys. Lett., 88, 103502:1–103502:3, 2006
[35] K.Cheng, M.Leys, S.Degroote, et al.,“AlGaN/GaN High Electron Mobility Transistors Grown on 150 nm Si(111) Substrates with High Uniformity.”Japanese J. Appl. Phys., vol. 47, pp. 1553-1555, 2013
[36] D. Balaz, “Current Collapse and Device Degradation in AlGaN/GaN Heterostructure
Field Effect Transistors,“ PhD thesis, University of Glasgow, 2011
[37] Jungwoo Joh *, Feng Gao, Tomás Palacios, Jesús A. del Alamo. “A model for the critical voltage for electrical degradation of GaN high electron mobility transistors” Microelectronics Reliability, vol 50, issue 6, pp. 767–773, 2010
[38] J. W. Chung, J. C. Roberts, E. L. Piner, and T. Palacios, “Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs”IEEE Electron Device Lett., vol. 29, no. 11, pp. 1196-1198, 2008
[39] Yevgeniy Puzyrev, Shubhajit Mukherjee, Jin Chen, Tania Roy, Marco Silvestri, Ronald D. Schrimpf, Daniel M. Fleetwood,, Jasprit Singh, John M. Hinckley, Alessandro Paccagnella, and Sokrates T. Pantelides“Gate Bias Dependence of Defect-Mediated
Hot-Carrier Degradation in GaN HEMTs“IEEE Transactions on Electron Devices , vol: 61, issue: 5, pp. 1316-1320, 2014
[40] Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni, “Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation”IEEE Transactions on Device and Materials Reliability, vol. 13, no. 2, pp 357-361, 2013
[41] David J. Cheney 1, Erica A. Douglas , Lu Liu , Chien-Fong Lo , Brent P. Gila , Fan Ren and Stephen J. Pearton “Degradation Mechanisms for GaN and GaAs High Speed Transistors”Materials, 5, pp 2498-2520, 2012
[42] Walter Wohlmuth, Ming-Hung Weng, Che-Kai Lin, Jhih-Han Du, Shin-Yi Ho, Tung-Yao Chou, ShuanMing Li, Clement Huang, Wei-Chou Wang, Wen-Kai Wang “AlGaN/GaN HEMT Development Targeted for Xband Applications” WIN Semiconductors Corp., No. 35,
[43] M. A. Bloom, R. W. White, M. A. Porter, D. J. Derickson, T. R. Weatherford “Small-Signal and DC Characterization of Stressed GaN-on-Si HEMTs”Integrated Reliability Workshop Final Report (IRW), 2012
[44] L. Yang et.all, “New method to measure source and drain resistance of the GaAs MESFET model,” IEEE Electron Device Lett., vol. 7, pp. 75-77, 1986.
[45] G. Dambrine et all, “A new method to determining the FET small-signal circuit,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp. 1151-1159, 1988.
[46] W. R. Curtice et all, “A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers,” IEEE Trans. Microwave Theory Tech., vol. 33, no. 12, pp. 183, 1985.
[47] Manfred Berroth and Roland Bosch, “Broad-band determination of the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory & Technology, vol. 38, no. 7, pp 891-895, 1990.
[48] D. Jin and Jesus A. del Alamo, “Mechanisms responsible for dynamic ON-resistance
in GaN high-voltage HEMTs,” in Proc. IEEE Int. Symp. Power Semicond. Devices
ICs., pp.333-336, 2012.
[49] Sebastien Nuttinck, Edward Gebara, Joy Lasker, and Herbert M. Harris, “Study of self-heating effects, temperature-dependent modeling, and pulsed Load-Pull measurements,” IEEE Trans. Microwave Theory & Technology, vol. 49, no. 12, pp. 2413-2420, 2001.
[50] Chuan Zhang, Maojun Wang, Member, IEEE, Bing Xie, Cheng P. Wen, Life Fellow, IEEE, Jinyan Wang,Yilong Hao, Wengang Wu, Member, IEEE, Kevin J. Chen, Fellow, IEEE, and Bo Shen “Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate”IEEE Transactions on Electron devices, vol. 62, no. 8, pp. 2475-2480, 2015
指導教授 辛裕明(Yue-Ming Hsin) 審核日期 2016-10-20
推文 facebook   plurk   twitter   funp   google   live   udn   HD   myshare   reddit   netvibes   friend   youpush   delicious   baidu   
網路書籤 Google bookmarks   del.icio.us   hemidemi   myshare   

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明