參考文獻 |
[1] U. K. Mishra, L. Shen, T. E. Kazior, and Y. Wu, “GaN Power Devices for Micro Inverters,”Proceedings of the IEEE, No. 2, February 2008.
[2] N. Kaminski, and O. Hilt, “SiC and GaN devices – wide bandgap is not all the same,” IET Circuits Devices Syst, Vol. 8, Iss. 3, pp. 227–236, May 2014.
[3] H. Huang, Y. C. Liang, G. S. Samudra, T. Chang, and C. Huang, “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs,”IEEE Transactions on Power Electronics, vol. 29, no. 5, May 2014.
[4] P. Kordos, J. Bernat, and M. Marso, “Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT,”Electronics Letters, Vol. 40, Iss. 1, pp. 438–441, March 2005.
[5] T. Zine-eddine, H. Zahra, and M. Zitouni, “DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT,” International Conference on Electrical Engineering, December 2015.
[6] C. Liu, E. F. Chor, and L.S. Tan, “Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-kdielectric for surface passivation and gate oxide,” Semiconductor Science and Technology, Vol. 22, Number. 5, March 2007.
[7] T. Hashizume, S. Ootomo, and H. Hasegawa, “Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric,” Applied Physics Letters, Vol. 83, Number. 14, October 2003.
[8] D. Deen, D. Storm, D. Meyer, D. S. Katzer, R. Bass, S Binari, and T Gougousi, “AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation,” Physica. Status Solidi C, No. 7–8, 2420–2423, May 2011.
[9] A.Fontser, A.Perez-Tomas, P.Godignon, and J.Millan, “High Voltage Low Ron In-situ SiN/Al0.35GaN0.65/GaN-on-Si Power HEMTs Operation up to 300 oC,” Proceedings of the European Solid-State Device Research Conference, September 2012.
[10] S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara, “Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer,” Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for, June 2015.
[11] T. Chang, T. Hsiao, C. Huang, W. Kuo, S. Lin, G. S. Samudra, and Y. C. Liang, “Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs,” IEEE Transactions on Electron Devices, Vol 62, issue 2, September 2014.
[12] H. Huang, Y. C. Liang, G. S. Samudra, T. Chang, and C. Huang, “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs,” IEEE Teansactions on Power Electronics, Vol. 29, No. 5, May 2014.
[13] M. T. Hasan, T. Asano, H. Tokuda, and M. Kuzuhara, “Current Collapse Suppression by Gate
Field-Plate in AlGaN/GaN HEMTs,” IEEE Electron Device Letters, Vol. 34, Issue. 11, September 2013.
[14] M. T. Hasan, T. Asano, H. Tokuda, and M. Kuzuhara, “Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation,” IEEE Electron Devvice Letters, Vol. 34, No. 9, September 2013.
[15] Z. Tang, S. Huang, Q. Jiang, S. Liu, C. Liu, and K. J. Chen, “High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx Passivation,” IEEE Electron Device Letters, Vol. 34, No. 3, March 2013.
[16] S. Arulkumaran, T. Egawa, H. Ishikawa, and T. Jimbo, “Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4 , and silicon oxynitride,” Applied Physics Letters, Vol. 84, Number. 4, January 2004.
[17] Z. H. Liu, G. I. Ng, H. Zhou, S. Arulkumaran, and Y. K. T. Maung, “Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation,” Applied Physics Letters, Vol. 98, March 2011.
[18] G. Vanko, T. Lalinsky, S. Hascık, I. Ryger, Z. Mozolova, J. Skriniarova, M. Tomaska, I. Kostic, and A. Vincze, “Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT,” Elsevier, Vol. 84, Issue. 1, August 2009.
[19] M. F. Romero, A. Jimenez, F. G. Flores, S. Martín-Horcajo, F. Calle, and E.s Munoz, “Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance,” IEEE Transactions on Electron Devices, Vol. 59, Issue. 2, December 2011.
[20] D. J. Meyer, J. R. Flemish, and J. M. Redwing, “Pre-passivation Plasma Surface Treatment Effects on Critical Device Electrical Parameters of AlGaN/GaN HEMTs,” Cs Mantech Conference, April 2008.
[21] D. S. Lee, J. W. Chung, H. Wang, X. Gao, S. Guo, P. Fay, and T. Palacios, “245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment,” IEEE Electron Device Letters, Vol. 32, No. 6, June 2011.
[22] T. Katsuno, M. Kanechika, K. Itoh, K. Nishikawa, T. Uesugi, and T. Kachi, “Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors,” Japanese Journal of Applied Physics, Vol. 52, March 2013.
[23] X. Wang, S. Huang, Y.Zheng, K. Wei, X. Chen, G. Liu, T. Yuan,W. Luo, L. Pang, H. Jiang, J. Li, C. Zhao, H. Zhang, and X. Liu, “Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer,” IEEE Electron Device Letters, VOL. 36, NO. 7, July 2015.
[24] M. Kuroda, T. Murata, S. Nakazawa, T. Takizawa, M. Nishijima, M. Yanagihara, T. Ueda, and T. Tanaka, “High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators,” IEEE Compound Semiconductor Integrated Circuits Symposium, October 2008.
[25] B. A. Hull, S. E. Mohney, H. S. Venugopalan, and J. C. Ramer, “Influence of oxygen on the activation of p-type GaN,” Applied Physics Letters, VOL. 76, Number. 16, April 2000.
[26] T. WEN, S. LEE, W. LEE1, T CHEN2, S CHAN2 and J. TSANG, “Activation of p-Type GaN in a Pure Oxygen Ambient,” Japanese Journal of Applied Physics, VOL. 40, pp. 495-497 16, February 2001.
[27] S. ARULKUMARAN, T. EGAWA, and H. ISHIKAWA, “Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors,” Japanese Journal of Applied Physics, VOL. 44, No. 5A, pp. 2953-2960, May 2005.
[28] T. R. Prunty, J. A. Smart, E. N. Chumbes, B. K. Ridley, L.F. Eastman, and J.R. Shealy, “Passivation of AIGaN/GaN Heterostructures with Silicon Nitride For Insulated Gate Transistors,” High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on, February 2000.
[29] J. Derluyn, S. Boeykens, K. Cheng, R. Vandersmissen, J. Das, W. Ruythooren,S. Degroote, M. R. Leys, M. Germain, and G. Borghs, “Improvement of AlGaN/ GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer,” Journal of Applied Physics, VOL. 98, September 2005.
[30] P. Moens, C. Liu, A. Banerjee, P. Vanmeerbeek, P. Coppens, H. Ziad, A. Constant, Z. Li, H. De Vleeschouwer, J. Roig-Guitart, P. Gassot, F. Bauwens, E. De Backer, B. Padmanabhan, A. Salih, J. Parsey, and M. Tack, “An Industrial Process for 650V rated GaN-on-Si Power Devices using in-situ SiN as a Gate Dielectric,” 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC′s (ISPSD), June 2014.
[31] B.P. Downey, D.J. Meyer, D.S. Katzer, T.M. Marron, M. Pan, and X. Gao, “Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs,” Elsevier, January 2015.
[32] M. J. Anand, G. I. Ng, S. Vicknesh, S. Arulkumaran, and K. Ranjan, “Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs,” physica Status Solidi C, No. 11, pp. 1421-1425, October 2013.
[33] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” Journal of Applied Physics, VOL. 85, Number6, March 1999.
[34] D. Balaz, “Current Collapse and Device Degradation in AlGaN/GaN Heterostructure Field Effect Transistors,” University of Glasgow, 2010.
[35] J. W. P. Hsu, M. J. Manfra, R. J. Molnar, B. Heying, and J. S. Speck, “Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates,” Applied Physics Letters, VOL. 81, Number. 1, July 2002.
[36] B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller,S. P. DenBaars, and J. S. Speck, “Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films,” Applied Physics Letters, VOL. 68, Number. 1, January 1996.
[37] Z. Tang, S. Huang, X. Tang, B. Li, and K. J. Chen, “Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs,” IEEE Transactions on Electron Devvice, Vol. 61, No. 8, August 2014.
[38] S.Agnihotri, S. Ghosh, A. Dasgupta, S. A. Ahsan, S K.handelwal, and Y. S. Chauhan, “Modeling of Trapping Effects in GaN HEMTs,” Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on, July 2015.
[39] Z. Tang, S. Huang, X. Tang, B. Li, and K. J. Chen, “Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs,” 2012 24th International Symposium on Power Semiconductor Devices and ICs, June 2012.
[40] A. Armstrong, A. R. Arehart, D. Green, U. K. Mishra, J. S. Speck, and S. A. Ringel, “Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon,” Journal of Applied Physics, VOL. 98, September 2005.
[41] M. Gassoumi, O. Fathallah , C. Gaquiere, and H. Maaref , “Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse,” Elsevier, VOL. 405, Issue. 9, pp. 2337-2339 , May 2010.
[42] Y. Tokuda, “Traps in MOCVD n-GaN Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy,” Cs Mantech Conference, May 2014.
[43] M. Gassoumi, B. Grimbert, C. Gaquiere, and H. Maaref, “Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS,” Semiconductors, VOL. 46, Issue. 3, pp. 382-385 , March 2012.
[44] D. Bisi, M. Meneghini, C. d. Santi, A. Chini, M. Dammann, P. Brückner, M. Mikulla, G. Meneghesso, and Enrico Zanoni , “Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements,” IEEE Transactions on Electron Devices, VOL. 60, No. 10, pp. 2337-2339 , October 2013.
[45] Z.-Q. Fang, J. W. Hemsky, D. C. Look, and M. P. Mack , “Electron-Irradiation-Induced Deep Level in n-Type GaN,” Applied Physics Letters, VOL.72, No. 4, January 1998.
[46] M. GASSOUMI, B. GRIMBERT, M. A. POISSON, J. FONTAINE, M. A. ZAIDI, C. GAQUIERE, and H. MAAREF, “Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs,” Journal of Optoelectronics and Advanced Materials, VOL.11, No. 11, pp. 1713-1717 November 2009.
[47] M. Meneghini, P. Vanmeerbeek, R. Silvestri, S. Dalcanale, A. Banerjee, D. Bisi, E. Zanoni, G. Meneghesso, and P. Moens, “Temperature-Dependent Dynamic RON in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage,” IEEE Transactions on Electron Devices, VOL. 62, No. 3, March 2015.
[48] C. Mizue, Y. Hori, M. Miczek, and T. Hashizume, “Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface,” Japanese Journal of Applied Physics, VOL. 50, Number. 2R, February 2011.
[49] S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges,” IEEE Electrin Device Letters, VOL. 34, Number. 2, February 2013.
[50] Z. H. Liu, G. I. Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, “Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator,” Appl. Phys. Lett., 2009. |