開孔電極結構對於垂直式有機電晶體電性影響之研究

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姓名

楊瑞豪(Rui-Hao Yang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

開孔電極結構對於垂直式有機電晶體電性影響之研究
(Effect of Electrical Characterization in Vertical Organic Transistors with Patterned Electrode Structure)

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摘要(中)

本論文研究N型有機材料C60的開孔式源極垂直電晶體，並探討不同源極結構對於垂直電晶體開/關電流比及電流密度之影響。利用膠體微影技術獲得大面積且高均勻性的單層奈米球膜作為金屬蒸鍍遮罩，可製作出高孔洞覆蓋率的開孔式源極。此外選用高功函數金屬銀作為源極材料，搭配全氟癸烷硫醇單分子層PFDT修飾銀源極功函數來提升與C60間的蕭特基能障，並比較孔洞覆蓋率及C60厚度對於垂直電晶體電性表現的影響。由實驗結果可知，在100 nm-C60有最大的開電流密度之收集，但關電流密度抑制能力差，已無明顯的開/關電流表現。為了有效抑制關電流密度，試著使用更高功函數金屬金、以硫醇基單分子層MUA優化銀源極表面形貌以及推疊金屬氧化物作為內部電流阻絕層。整體而言，以雙電子槍蒸鍍系統於開孔銀源極上鍍製適當厚度的Al2O3絕緣層，且搭配100 nm-C60主動層垂直電晶體可有效的抑制關電流密度至少一個數量級，其開電流密度可達101~102 mA/cm2和開/關電流比接近103，此電性表現以達到驅動OLED條件，未來可將垂直電晶體應用於顯示面板中。

摘要(英)

The thesis studies different patterned source electrode structures and their effects on the on/off ratio and current density of C60 vertical organic transistors. By using colloidal lithography to prepare large area, highly uniform nanospheres monolayer as the evaporation mask, the patterned electrode with high perforations coverage was obtained. The device was fabricated with the high work function Ag source electrode modified with PFDT self-assembled monolayer (SAM) to increase Schottky barrier berween Ag and C60. Next the electrical performance of transistors with different perforations coverage and thickness of C60 layer was investigated. The experimental results showed that the transistor exhibits the highest on-current density with 100 nm C60, but the off-current increases significantly with source-drain voltage, and hence the on/off ratio is poor. In order to reduce the off-current density for 100 nm C60 transistors, several methods were investigated: Au electrode with a higher work function, using MUA-SAM to optimize surface morphology of electrode, and depositing metal oxide layer on Ag-source as a blocking layer. Overall, deposition of appropriately thick Al2O3 on Ag source by Double E-gun results in off-current about 10 times lower than Ag source treated with PFDT-SAM, while the on-current density reaches 101~102 mA/cm2 and on/off ratio is nearly 103. The device is expected to be used to drive OLEDs and applied for display technology in the future.

關鍵字(中)

★ 垂直式有機電晶體
★ 開孔電極結構

關鍵字(英)

論文目次

摘要 V
Abstract VI
致謝 VII
目錄 VIII
圖目錄 X
第一章緒論 1
1-1 前言 1
1-1-1傳統有機薄膜電晶體 3
1-1-2蕭特基基底垂直電晶體 5
1-1-3研究目的與動機 9
第二章基本理論 10
2-1膠體微影術簡介 10
2-1-1六方最密堆積自組裝效應 11
2-1-2無序排列自組裝效應 13
2-2垂直式電晶體之工作原理 16
2-1-2垂直式電晶體-關狀態操作機制 18
2-1-2垂直式電晶體-開狀態操作機制 21
2-1-2垂直式電晶體-轉換特性曲線與開/關電流比 24
第三章實驗方法與步驟 25
3-1元件材料級結構介紹 25
3-1-1主動層材料介紹 25
3-1-2垂直式電晶體能階設計 27
3-1-3硫醇基自組性單分子層 28
3-1實驗方法與製備 32
3-2-1實驗儀器 32
3-2-2垂直式有機電晶體之製成步驟 40
3-3垂直式電晶體之模擬 45
第四章結果與討論 46
4-1垂直電晶體之開孔式源極 46
4-1-1單層聚苯乙烯奈米球膜成長結果 46
4-1-2奈米級開孔式源極製作 47
4-1-3奈米級開孔源極結構之總結 51
4-2垂直式有機電晶體之電性探討 52
4-2-1以硫醇基單分子層修飾開孔式源極金屬功函數 52
4-2-2不同孔徑大小及開孔率垂直電晶體之模擬 54
4-2-3以硫醇基分子PFDT修飾金屬功函數之銀源極垂直電晶體 57
4-2-4高金屬功函數之金源極垂直電晶體 65
4-2-5以硫醇基分子MUA優化銀源極表面形貌 69
4-2-6以金屬氧化物抑制電晶體關電流密度 73
4-2-7垂直式有機電晶體電性之總結 81
第五章結論與未來展望 83
參考文獻 85

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指導教授

張瑞芬(Jui-Fen Chang)

審核日期

2017-10-5

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