氮化物表面電漿生醫感測之理論分析

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姓名

黃凱麟(Kai-Lin Huang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

氮化物表面電漿生醫感測之理論分析
(Theoretical Analyses on Nitride-based Surface Plasmon Resonance Biosensors)

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摘要(中)

表面電漿共振是存在於金屬與介電物質介面處的表面電磁波，近年來表面電漿共振的特性，已被大幅應用在生醫檢測技術。表面電漿共振生醫感測是屬於光學式的量測方式，對金屬/介電質界面的折射率變化具備超高的敏感度，藉此我們可以判定表面待測物質的濃度變化。
本研究以氮化物為介電質，搭配銀薄膜以形成表面電漿結構，並利用理論分析的方式，探究氮化物表面電漿結構在生醫感測上的應用潛力。與傳統常用的稜鏡相較，氮化物(GaN或InGaN)具備更高的折射率、更高的化學穩定度。而氮化銦鎵(InGaN)量子井所產生的光子，非常適合當作表面電漿效應的增益介質(Gain Medium)，可增加感測元件的靈敏度。此外，氮化物的磊晶方式，可輕易形成大面積分布的奈米結構，有助於產生單分子偵測所需的表面拉曼散射增強效應(surface enhanced Raman scattering, SERS)。我們利用模擬的方式，觀察其氮化物表面電漿的強度變化，並藉此說明氮化物表面電漿結構在生物檢測應用上的優勢。

摘要(英)

Surface plasmon resonance (SPR) is the collective electron oscillation at the interface of metal and dielectric material. The SPR effect is highly sensitive to the change of surface refractive index, and therefore can be used to detect biomolecular binding events between the antibody and the antigen.
In this research, we present theoretical analyses on the potential of nitride-based SPR structure in biosensing applications. The SPR effect is achieved with a GaN/InGaN/GaN quantum well and a thin Ag layer, and the change in surface refractive index is detected by the varied emission intensity from the quantum well. The nitride epilayers were grown with metal-organic chemical vapor deposition (MOCVD). The MOCVD technique can easily produce wafer-scale nanostructures that are suitable for single-molecule detection with the surface enhanced Raman scattering (SERS) effect. With the calculated dispersion curves and the penetration depths estimated by the finite-difference time-domain method, we demonstrate the advantages of this novel SPR biosensing structure, which are not attainable with the conventional Kretschmann configuration.

關鍵字(中)

★ 表面電漿
★ 氮化鎵

關鍵字(英)

★ Surface Plasmon
★ GaN

論文目次

中文摘要 I

ABSTRACT II

誌謝 III

目錄 IV

圖目錄 VI

表目錄 IX

中英文名詞縮寫對照表 X

第一章、緒論 1
1.1前言 1
1.2氮化物材料結構與特性 3
1.3表面電漿生醫感測元件的優勢與挑戰 5
1.4研究動機與章節架構 8
第二章、實驗原理、製程與儀器 9
2.1表面電漿原理 9
2.2表面電漿色散曲線 15
2.3表面電漿共振現象....... ...19
2.4金屬奈米粒子局域性表面電漿....... ...22
2.5增益介質....... ...24
2.6試片結構及元件製作流程....... ...25
2.7模擬軟體介紹....... ...27
第三章、分析與討論 28
3.1氮化鎵與銀介面色散曲線 28
3.2氮化鎵與銀介面能態密度 29
3.3表面電漿共振角度 31
3.4表面電漿模擬分析FDTD 36
3.5氮化鎵光致激發光譜(PL)量測分析 44
第四章、結論與未來發展 49
4.1結論 49
4.2未來發展 49
參考文獻 52

參考文獻

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指導教授

賴昆佑(Kun-Yu Lai)

審核日期

2017-7-11

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