高功率脈衝磁控濺鍍成長透明導電膜 於可撓性塑膠基板之研究

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鄧鈞懋(JUN-MAO DENG) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

高功率脈衝磁控濺鍍成長透明導電膜於可撓性塑膠基板之研究
(Research of Transparent Conductive Films on the Flexible Plastic Substrates Using High Power Impulse Magnetron Sputtering)

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摘要(中)

可撓式基板材料為具有可連續捲對捲(roll-to-roll)生產優勢的新
世代基板技術，在材料上則需具備輕、薄、不易破碎以及攜帶方便、
可彎曲性之特性。欲探討分子結構與電荷傳導速率關連，受到分子濺
鍍成膜時的形貌影響。而 HIPIMS（高功率脈衝磁控濺鍍，high power
impulse magnetron sputtering）是一種以高功率脈衝電源進行磁控
濺鍍的技術，可在基材低溫度下得到無孔隙高密度的薄膜。在軟性基
板中，薄膜元件需經歷反覆撓曲，撓曲薄膜元件電性的影響是一有趣
課題。本實驗使用可撓曲之塑膠製備透明導電膜ITO，研究撓曲對其
載子傳遞能力之影響。本研究於塑膠基板上以HIPIMS方法製作可撓式
透明導電膜，並量測在不同應力下的元件特性。我們發現當元件受壓
應力彎曲，元件電性差異大，且可容忍之彎折次數較少；反之受張應
力彎曲時，則電性差異較平緩，而可容忍之彎折次數較多。我們認為
元件受應力的改變主要來自於薄膜內分子間作用力的變化：在張應力
狀態時，晶粒-晶粒間的平均自由徑變大使薄膜產生微裂痕，使得載
子遷移率較好；反之，當元件處於壓應力狀態時，晶粒-晶粒間的平
均自由徑變小使薄膜產生變形，載子遷移率因而下降。

摘要(英)

The flexible substrate material is a new generation substrate technology with the advantages of continuous roll-to-roll production. The material needs to be light, thin, not easily broken, and easy to carry and bend. The molecular structure is related to the charge conduction rate and is affected by the morphology of the film when it is sputtered by a molecule. HIPIMS (high power impulse magnetron sputtering) is a high-power pulsed power supply for magnetron sputtering, which provides a low-porosity film at low temperatures.
In a flexible substrate, the thin film component undergoes repeated flexing, and the electrical influence of the flexographic film component is an interesting subject. In this experiment, a transparent conductive
film ITO was prepared using a flexible plastic to study the effect of deflection on its carrier transport ability. In this study, a flexible transparent conductive film was fabricated on a plastic substrate by HIPIMS method, and the characteristics of the components under different stresses were measured. We found that when the component is bent by compressive stress, the electrical difference of the component is large,and the number of bends that can be tolerated is small. On the contrary,
when the tensile stress is bent, the electrical difference is gentle, and the number of bends that can be tolerated is large.
We believe that the change of the stress of the component mainly comes from the change of the intermolecular force in the film: in the tensile stress state, the average free diameter between the grains and the grains becomes large, which causes the film to have micro-cracks, which makes the carrier mobility better. On the contrary, when the element is in a compressive stress state, the average free diameter between the crystal grains and the crystal grains becomes small, and the film is deformed,and the carrier mobility is thus lowered.

關鍵字(中)

★ 透明導電膜
★ 高功率脈衝磁控式濺鍍
★ 可撓曲性
★ 可靠度測試

關鍵字(英)

論文目次

摘要----------------------------------------------I
Abstract------------------------------------------Ⅱ
致謝----------------------------------------------Ⅲ
目錄----------------------------------------------IV
圖目錄--------------------------------------------Ⅷ
表目錄-------------------------------------------ⅩIV
第一章緒論----------------------------------------1
1-1 研究背景---------------------------------------1
1-2 可撓式基板簡介----------------------------------7
1-3 研究動機與目的---------------------------------10
第二章基本理論------------------------------------12
2-1 ITO 透明導電膜之特性---------------------------12
2-1-1 與導電性質有關的量---------------------------12
2-1-2 In2O3 的電學特性與導電理論--------------------15
2-2 ITO 透明導電膜光學性質之理論--------------------17
2-2-1 與光學性質有關的係數--------------------------18
2-2-2 紫外光吸收區---------------------------------20
2-2-3 可見光與近紅外光干涉區------------------------21
2-3 薄膜應力定義-----------------------------------23
第三章實驗設備與量測儀器---------------------------25
3-1 實驗流程與前置步驟------------------------------25
3-2 濺鍍系統---------------------------------------26
3-2-1 高功率脈衝磁控濺鍍----------------------------27
3-2-2 濺鍍條件對透明導電膜性質的影響-----------------28
3-2-3 基板溫度調整---------------------------------30
3-3 量測系統---------------------------------------31
3-3-1 光譜儀---------------------------------------31
3-3-2 Hall量測-------------------------------------31
3-3-3 四點探針量測----------------------------------34
3-3-4 表面輪廓儀Alpha-step profile meter------------34
3-3-5 UV Ozone-------------------------------------35
3-3-6 鉛筆硬度計------------------------------------36
3-3-7 附著性----------------------------------------36
第四章實驗結果與分析--------------------------------37
4-1 實驗架構----------------------------------------37
4-2 濺鍍功率對 ITO 薄膜性質的影響--------------------37
4-2-1 濺鍍功率對ITO膜在Glass與PET基板的穿透率之影響---38
4-2-2 濺鍍功率對ITO膜在Glass與PET基板的反射率之影響---39
4-2-3 濺鍍功率對ITO膜在Glass與PET基板的吸收率之影響---40
4-2-4 濺鍍功率對ITO膜在Glass與PET基板的電性之影響-----41
4-3 脈衝時間對 ITO 薄膜性質的影響--------------------43
4-3-1 脈衝時間對ITO膜在Glass與PET基板的穿透率之影響---44
4-3-2 脈衝時間對ITO膜在Glass與PET基板的反射率之影響---45
4-3-3 脈衝時間對ITO膜在Glass與PET基板的吸收率之影響---46
4-3-4 脈衝時間對ITO膜在Glass與PET基板的電性之影響-----47
4-4 氧氣流量對 ITO 薄膜性質的影響--------------------50
4-4-1 氧氣流量對ITO膜在Glass與PET基板的穿透率之影響---51
4-4-2 氧氣流量對ITO膜在Glass與PET基板的反射率之影響---52
4-4-3 氧氣流量對ITO膜在Glass與PET基板的吸收率之影響---53
4-4-4 氧氣流量對ITO膜在Glass與PET基板的電性之影響-----54
4-5 濺鍍電壓對 ITO 薄膜性質的影響--------------------56
4-5-1 濺鍍電壓對ITO膜在Glass與PET基板的穿透率之影響---57
4-5-2 濺鍍電壓對ITO膜在Glass與PET基板的反射率之影響---58
4-5-3 濺鍍電壓對ITO膜在Glass與PET基板的吸收率之影響---59
4-5-4 濺鍍電壓對ITO膜在Glass與PET基板的電性之影響-----60
4-6 降低濺鍍電壓改變沉積率對薄膜性質影響--------------62
4-6-1 降低濺鍍電壓對ITO膜在PET基板的穿透率之影響------62
4-6-2 降低濺鍍電壓對ITO膜在PET基板的電性之影響--------63
4-7 撓曲狀態下的元件電性表現-------------------------64
4-7-1 量測方式--------------------------------------64
4-7-2 脈衝時間濺鍍 ITO 薄膜進行撓曲後電性表現---------65
4-7-3 撓曲次數與電性表現-----------------------------66
4-7-4 不同撓曲直徑下的電性分析-----------------------76
4-7-5 撓曲狀態下電性變化總結與分析--------------------82
4-7-6 撓曲模型--------------------------------------84
4-8 機械特性----------------------------------------84
4-8-1 硬度測試--------------------------------------84
4-8-2 附著性程度------------------------------------86
第五章結論-----------------------------------------88
參考文獻--------------------------------------------90

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指導教授

陳昇暉

審核日期

2018-10-19

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