應用金屬-半導體接面原理實現無光源下 製造N型多孔矽之研究

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姓名

鄭詔元(Chao-Yuan Cheng) 查詢紙本館藏

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機械工程學系

論文名稱

應用金屬-半導體接面原理實現無光源下製造N型多孔矽之研究
(Study of application of metal-semiconductor junction principle on the production of N-type porous silicon in the dark)

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摘要(中)

ㄧ般而言，以電化學法製造N型多孔矽必須外加光源照射矽晶圓，以達電子-電洞對分離，產生電洞，才能進行蝕刻。另一方面，在近期研究指出使用外加電場、磁場或是P-N接面方式可暗室製造N型多孔矽。本研究應用金屬-半導體接面原理，以銅片電極為金屬端，N-Type矽晶圓為半導體端，在順向偏壓下使空間電荷區變薄，使得電子-電洞對分離，實現不以任何光源輔助即可蝕刻出N型多孔矽。另外，研究中發現使用1064nm雷射輔助蝕刻，發現能使多孔矽表面以及光激發光現象更為均勻。

摘要(英)

In general, N-type Si must be illuminated in order to drive electrochemical etching, light generates electron-hole pairs. On the other hand, there are there novel methods to assist hole generation and enhance the growth porous silicon on n-type silicon in the dark, respectively, added electric field, magnetic field, P-N junction. This study is based on the principle of metal-semiconductor junction, the copper electrode is the metal side, the N-Type silicon wafer is the semiconductor side, and the space charge region is thinned under the forward bias,
so that the electron-hole pairs are separated, to achieve without any auxiliary light source can be etched N-type porous silicon. In addition, the study found that the use of 1064nm laser-assisted etching, porous silicon surface and the phenomenon of light excitation can be more uniform.

關鍵字(中)

★ N型多孔矽
★ 金屬-半導體接面
★ 電化學蝕刻
★ 順向偏壓
★ 光激發光
★ 暗室

關鍵字(英)

★ N-type porous silicon
★ metal-semiconductor junction
★ electrochemical etching
★ forward bias
★ photoluminescence
★ in the dark

論文目次

摘要 i
ABSTRACT ii
誌謝 iii
目錄 iv
圖目錄 viii
表目錄 xiii
第一章緒論 1
1-1研究背景 1
1-2多孔矽製程 3
1-2-1乾式蝕刻法(Dry etching) 3
1-2-2濕式蝕刻法(Wet etching) 4
1-2-3電化學蝕刻法(Electrochemical Etching) 5
1-3多孔矽應用 6
1-4研究動機 10
第二章原理與文獻回顧 12
2-1 多孔矽理論模型 12
2-1-1量子模型(The Quantrm Model) 12
2-1-2 Rate模型(The Rate Model) 13
2-1-3 擴散限制模型（The Diffusion-Limited Model） 14
2-1-4 貝爾模型（The Beale Model） 15
2-2多孔矽形成機制 16
2-2-1多孔矽電化學反應裝置 16
2-2-2多孔矽成型的溶解機制 17
2-2-3矽在電解液中的電流-電壓曲線(I-V Curve) 19
2-3金屬-半導體接面理論 22
2-3-1金屬-N-Type半導體接觸 22
2-3-2金屬-N-Type半導體之電壓電流關係 24
2-4半導體-電解液接觸 29
2-4-1 N-Type半導體的光效應 31
第三章實驗方法與步驟 33
3-1試片選擇與清洗 33
3-2實驗器材 34
3-2-1 雷射光源、偏振片與雷射功率計 34
3-2-2 電化學蝕刻系統 36
3-3實驗步驟 37
3-3-1暗室化學蝕刻 (Electrochemical in dark) 37
3-3-2光電化學蝕刻 (Photoelectrochemical) 38
3-4實驗分析儀器 41
3-4-1場發射掃描式電子顯微鏡 (FE-SEM) 41
3-4-2光激發光頻譜 (Photoluminescence, PL) 42
3-4-3高強度紫外燈 (High intensity UV lamps) 43
第四章結果與討論 44
4-1暗室電化學蝕刻實驗試片 44
4-1-1直接觀察試片表面及UV照射觀察 44
4-1-2 FE-SEM觀察多孔矽表面與剖面形貌 47
4-2光電化學蝕刻實驗試片 55
4-2-1直接觀察試片表面及UV照射觀察 55
4-2-2 FE-SEM觀察多孔矽表面與剖面形貌 60
4-3蝕刻速率 69
4-4多孔矽之光激發光光譜(PL)強度 72
4-5 N-Type多孔矽成型討論 77
4-6驗證金屬-N-Type半導體接面對於電化學蝕刻的影響 81
4-6-1 鍍銅膜之矽試片PL比較 89
第五章結論 92
第六章參考文獻 94

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2017-6-21

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