雷射光誘發氧化還原合成N型矽奈米晶之研究

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：17

、訪客IP：18.118.140.155

姓名

戴衡君(Heng-Chun Tai) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

雷射光誘發氧化還原合成N型矽奈米晶之研究
(Study of Synthesis of N-type Silicon Nanocrystals by Laser Induced Redox Process)

相關論文

★ 塑膠機殼內部表面處理對電磁波干擾防護研究	★ 研磨頭氣壓分配在化學機械研磨晶圓膜厚移除製程上之影響
★ 利用光導效應改善非接觸式電容位移感測器測厚儀之研究	★ 石墨材料時變劣化微結構分析
★ 半導體黃光製程中六甲基二矽氮烷之數量對顯影後圖型之影響	★ 可程式控制器機構設計之流程研究
★ 伺服沖床運動曲線與金屬板材成型關聯性分析	★ 鋁合金7003與630不銹鋼異質金屬雷射銲接研究
★ 應用銲針尺寸與線徑之推算進行銲線製程第二銲點參數優化與統一之研究	★ 複合式類神經網路預測貨櫃船主機油耗
★ 熱力微照射製作絕緣層矽晶材料之研究	★ 微波活化對被植入於矽中之氫離子之研究
★ 矽/石英晶圓鍵合之研究	★ 奈米尺度薄膜轉移技術
★ 光能切離矽薄膜之研究	★ 氮矽基鍵合之研究

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

至系統瀏覽論文 ( 永不開放)

摘要(中)

一般而言，多孔矽結構都是使用外加電場驅動的電化學蝕刻產生。透過控制電流、電壓以及時間控制在蝕刻液中來產生所需要的多孔矽結構。本研究的特點處為不施以外加電場，純使用1064nm波長雷射和蝕刻溶液，於N型矽晶圓表面上進行氧化還原反應就可以產生多孔矽結構，而其蝕刻的現象會發生在受雷射照射以及非受雷射照射側。但透過調整蝕刻溶液的體積比例，可以控制其蝕刻現象只發生在非受雷射照射的那一側。隨著蝕刻時間的改變，蝕刻點的表面結構也會隨之變化。且透過改變蝕刻溶液的體積比例，可以改變所生成的矽奈米晶粒尺寸。根據實驗結果，這現象能用蝕刻液-半導體能障(Schottky Barrier)原理及改變方式來解釋。

摘要(英)

In general, porous silicon structures are produced using electrochemical etching driven by electric fields. The desired porous silicon structure is generated by controlling the current, voltage, and time in the etchant. The characteristic of this study is not applied to the external electric field, only use of 1064nm wavelength laser and etchant, in the N-type silicon wafer surface redox reaction can produce porous silicon structure, and the etching phenomenon occurs not only on the laser irradiation side but also on the non-laser irradiation side. But by adjusting the volume ratio of the etchant, it can control the etching phenomenon only occurs on the side of the non-laser irradiation. When the etching time changes, the surface structure of the etching point will also change. By changing the volume ratio of the etchant, the size of the nanocrystal grains can be changed. According to the experimental results, this phenomenon can be explained by electrolyte-semiconductor barrier (Schotty barrier) theory.

關鍵字(中)

★ 矽奈米晶
★ 蝕刻
★ 光化學
★ 光激發光
★ 費米能階

關鍵字(英)

論文目次

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VII
表目錄 XII
第一章緒論 1
1.1研究背景 1
1.2多孔矽的製作 2
1.2.1濕式蝕刻法(Wet Etching) 3
1.2.2電化學蝕刻法(Electrochemical Etching) 4
1.2.3乾式蝕刻(Dry Etching) 5
1.3多孔矽的應用 5
1.4研究動機與目標 11
第二章原理與文獻回顧 12
2.1 多孔矽模型理論 12
2.1.1 Rate模型(Rate Model) 12
2.1.2量子模型(The Quantum Model) 13
2.1.3貝爾模型(The Beale Model) 13
2.1.4擴散限制模型(The Diffusion-Limited Model) 14
2.2多孔矽的形成機制 15
2.2.1電化學蝕刻 15
2.2.2光化學蝕刻 17
2.3光電效應 18
2.3.1光電效應吸收機制 19
2.4蕭特基接觸原理 20
2.4.1半導體-金屬接面原理 22
2.4.2半導體-電解液接面原理 23
第三章實驗準備與實驗步驟 24
3.1實驗材料及設備 24
3.2分析儀器介紹 27
3.3實驗步驟 32
3.3.1實驗流程 32
3.3.2矽晶圓清洗 34
3.3.3實驗設備架設 35
3.3.4實驗參數設定 36
第四章結果與討論 37
4.1 光化學蝕刻結果討論 37
4.1.1 HF:EtOH = 2:1 38
4.1.2 HF:EtOH = 1:2 47
4.1.3 HF:EtOH = 1:1 55
4.2 雷射照射蝕刻現象 68
第五章結論 70
第六章參考文獻 71

參考文獻

[1] A. Uhlir, "Electrolytic shaping of germanium and silicon," Bell System Technical Journal, vol. 35, pp. 333-347, 1956.
[2] L. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Applied Physics Letters, vol. 57, pp. 1046-1048, 1990.
[3] I. Sagnes, A. Halimaoui, G. Vincent, and P. Badoz, "Optical absorption evidence of a quantum size effect in porous silicon," Applied physics letters, vol. 62, pp. 1155-1157, 1993.
[4] V. Lehmann and U. Gösele, "Porous silicon formation: a quantum wire effect," Applied Physics Letters, vol. 58, pp. 856-858, 1991.
[5] T. Osaka, K. Ogasawara, and S. Nakahara, "Classification of the Pore Structure of n-Type Silicon and Its Microstructure, " Journal of The Electrochemical Society, vol. 144, pp. 3226-337, 1997.
[6] Z. Gaburro, N. Daldosso, and L. Pavesi, "Porous silicon," Encyclopedia of Condensed Matter Physics, pp. 391-401, 2005.
[7] P. Panek, M. Lipiński, and J. Dutkiewicz, "Texturization of multicrystalline silicon by wet chemical etching for silicon solar cells," Journal of Materials Science, vol. 40, pp. 1459-1463, 2005.
[8] M. Quirk and J. Serda, "Semiconductor manufacturing technology, " vol.1, Prentice Hall Upper Saddle River, NJ, 2001.
[9] R. Tsu, H. Shen, and M. Dutta, "Correlation of Raman and photoluminescence spectra of porous silicon," Applied physics letters, vol. 60, pp. 112-114, 1992.
[10] E. K. Propst and P. A. Kohl, "The electrochemical oxidation of silicon and formation of porous silicon in acetonitrile," Journal of The Electrochemical Society, vol. 141, pp. 1006-1013, 1994.
[11] O. Bisi, S. Ossicini, and L. Pavesi, "Porous silicon: a quantum sponge structure for silicon based optoelectronics," Surface science reports, vol. 38, pp. 1-126, 2000.
[12] S. Stolyarova, S. Cherian, R. Raiteri, J. Zeravik, P. Skládal, and Y. Nemirovsky, "Composite porous silicon-crystalline silicon cantilevers for enhanced biosensing," Sensors and Actuators B: Chemical, vol. 131, pp. 509-515, 2008.
[13] L. Canham, T. Cox, A. Loni, and A. Simons, "Progress towards silicon optoelectronics using porous silicon technology," Applied surface science, vol. 102, pp. 436-441, 1996.
[14] C.-C. Tu, Y.-N. Chou, H.-C. Hung, J. Wu, S. Jiang, and L. Y. Lin, "Fluorescent porous silicon biological probes with high quantum efficiency and stability," Optics express, vol. 22, pp. 29996-30003, 2014.
[15] S. Strehlke, D. Sarti, A. Krotkus, K. Grigoras, and C. Lévy-Clément, "The porous silicon emitter concept applied to multicrystalline silicon solar cells," Thin Solid Films, vol. 297, pp. 291-295, 1997.
[16] S. E. Thompson and S. Parthasarathy, "Moore′s law: the future of Si microelectronics," materials today, vol. 9, pp. 20-25, 2006.
[17] G. Celler and S. Cristoloveanu, "Frontiers of silicon-on-insulator," Journal of Applied Physics, vol. 93, pp. 4955-4978, 2003.
[18] J. B. Kuo and K.-W. Su, CMOS VLSI engineering: silicon-on-insulator (SOI): Springer Science & Business Media, 2013.
[19] J. Lasky, S. Stiffler, F. White, and J. Abernathey, "Silicon-on-insulator (SOI) by bonding and etch-back," in Electron Devices Meeting, 1985 International, pp. 684-687, 1985.
[20] M. Bruel, "Process for the production of thin semiconductor material films," U.S. Patent No. 5374564, 1994.
[21] T. Yonehara and K. Sakaguchi, "Eltran®, Novel SOI Wafer Technology," JSAP International, vol. 4, pp. 10-16, 2001.
[22] N. M. Ahmed, Y. Al-Douri, A. M. Alwan, A. A. Jabbar, and G. E. Arif, "Characteristics of nanostructure silicon photodiode using laser assisted etching," Procedia Engineering, vol. 53, pp. 393-399, 2013.
[23] V. P. Parhutik, J. M. Albella, J. M. Martinez-Duart, J. M. Gomez-rodriguez, A. M. Baro, V. I. Shershulsky, “Different types of pore structure in porous silicon” , Appl. Phys. Lett.,62,366,(1981).
[24] V. Lehmann, "The Physics of Macropore Formation in Low Doped n-Type Silicon," Journal of the Electrochemical Society, vol. 140, pp. 2836-2843, 1993.
[25] M. Beale, J. Benjamin, M. Uren, N. Chew, and A. Cullis, "An experimental and theoretical study of the formation and microstructure of porous silicon," Journal of Crystal Growth, vol. 73, pp. 622-636, 1985.
[26] R. Smith and S. Collins, "Porous silicon formation mechanisms," Journal of Applied Physics, vol. 71, pp. R1-R22, 1992.
[27] T. Unagami, "Formation mechanism of porous silicon layer by anodization in HF solution," Journal of the electrochemical society, vol. 127, pp. 476-483, 1980.
[28] G. X. Zhang, "Porous Silicon: Morphology and Formation," Teck Cominco, Canada, pp. 98-103, 2006
[29] N. Yamamoto, H. Takai, "Formation mechanism of silicon based luminescence material," Thin Solid Films, vol. 388, pp. 138-142, 2001
[30] H. Hertz, "Ueber einen Einfluss des ultravioletten Lichtes auf die electrische Entladung," Annalen der Physik, vol. 267, pp. 983-1000, 1887.
[31] D. Halliday, R. Resnick, and J. Walker, Fundamentals of physics extended vol. 1: John Wiley & Sons, 2010.
[32] D. K. Schroder, N. R. Thomas, and J. C. Swartz, "Free carrier absorption in silicon," Solid-State Circuits, IEEE Journal of, vol. 13, pp. 180-187, 1978.
[33] E. H. Rhoderick, R. H. Williams, Metal-Semiconductor Contacts,
Clarendon Press. Oxford, 1998.
[34] W. Schmickler, E. Santos, "Interfacial Electrochemistry," Springer, pp. 115-128, 1996
[35] L. Canham, "Handbook of Porous Silicon," Springer, pp. 67-74, 2014

指導教授

李天錫

審核日期

2017-6-21

推文