碳化矽電泳拋光矽晶圓表面粗糙度之研究

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姓名	劉邦霽(BANG-JI LIU) 查詢紙本館藏	畢業系所	機械工程學系
論文名稱	碳化矽電泳拋光矽晶圓表面粗糙度之研究 (A study on surface roughness of silicon wafer by using SiC electrophoretic deposition polishing)
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摘要(中)	本文是運用亞微米碳化矽對矽晶圓進行電泳拋光與傳統機械拋光，以改善矽晶圓的表面粗糙度。電泳沉積具備均勻披覆與低成本等特性，增加拋光輪吸附研磨顆粒的能力，本文研究希望開發一種結合電泳沉積之拋光技術，提升矽晶圓拋光效率與降低表面粗糙度，可應用在晶圓再生。本文使用傳統機械拋光與電泳沉積拋光製程分別對加工時間、軸向荷重、拋光輪轉速等製程參數進行實驗，並比較實驗後的矽晶圓表面粗糙度、表面形貌，來進行分析探討。根據實驗結果，矽晶圓試片於機械拋光實驗中，原始表面粗糙度值可由Ra 0.120 μm、Rmax 1.16 μm降為Ra 0.014 μm、Rmax 0.383 μm；矽晶圓試片於電泳拋光實驗中，原始表面粗糙度值可由Ra 0.120 μm、Rmax 1.16 μm降為Ra 0.013 μm、Rmax 0.338 μm。證實應用電泳沉積機制能改善機械拋光製程下的矽晶圓表面粗糙度。
摘要(英)	This research is focus on electrophoretic deposition polishing and mechanical polishing to improve the surface roughness of silicon wafer. The polishing in this article are experimented with the parameters of load, polishing time, polishing wheel rotation speed. The roughness of silicon wafer the surface morphology of the results are investigated and analyzed. The experimental results indicate that the original roughness of silicon wafer are Ra 0.120 μm、Rmax 1.16 μm can be reduced to Ra 0.014 μm、Rmax 0.383 μm in mechanical polishing process. The original roughness of silicon wafer are Ra 0.120 μm μm、Rmax 1.16 μm can be reduced to Ra 0.013 μm、Rmax 0.338 μm in electrophoretic deposition polishing process. This research verified that the electrophoretic deposition polishing can improve the surface roughness of silicon wafer.
關鍵字(中)	★ 碳化矽 ★ 電泳拋光 ★ 矽晶圓	關鍵字(英)
論文目次	目錄摘要 I Abstract II 目錄 III 圖目錄 V 表目錄 VII 第一章研究背景 1 1-1 前言 1 1-2 研究動機與目的 1 1-3 文獻回顧 3 1-4 研究方法 4 第二章實驗基本原理 6 2-1 機械拋光原理 6 2-2 電泳沉積原理 7 2-2-1 電泳簡介 7 2-2-2電雙層理論 7 2-2-3 電泳簡介電動力學現象 8 2-2-4粉體粒子表面電荷來源 11 2-2-5電泳懸浮液內粉體粒子間分散行為之機制 13 2-2-6 電泳沉積 15 2-2-7 電泳沉積的方式與沉積速率 15 第三章實驗設備與流程 18 3-1 實驗設備 18 3-2 實驗材料 25 3-3 實驗流程與方法 30 3-3-1實驗流程 30 3-3-2 實驗參數設定 31 3-3-3實驗方法 31 第四章碳化矽電泳拋光矽晶圓之研究 37 4-1 機械拋光矽晶圓 37 4-1-1拋光時間對表面粗糙度之影響 37 4-1-2垂直荷重對表面粗糙度之影響 41 4-1-3拋光輪轉速對表面粗糙度之影響 44 4-2 電泳拋光矽晶圓 47 4-2-1拋光時間對表面粗糙度之影響 47 4-2-2垂直荷重對表面粗糙度之影響 50 4-2-3拋光輪轉速對表面粗糙度之影響 53 4-3 電泳沉積機制對矽晶圓拋光的比較 56 第五章結論 60 參考文獻 61
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指導教授	傅尹坤崔海平	審核日期	2018-8-23
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