超薄類鑽碳膜之研究

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廖顏郁(Yan-Yu Liao) 查詢紙本館藏

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光機電工程研究所

論文名稱

超薄類鑽碳膜之研究
(Research of Ultra-Thin Diamond-Like Carbon Films)

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摘要(中)

類鑽碳薄膜有著類似鑽石的性質，結構由sp3鑽石鍵結與sp2石墨鍵結組成的非晶態碳薄膜。有絕的機械性質像硬度高、耐磨性……等，可作為保護性鍍膜。但因穿透率不佳，使其在應用上有困難。而藉由參雜可以改善類鑽碳膜的缺點。
電漿輔助化學氣相沉積法(PECVD)是最常見的類鑽碳薄膜製程，而本研究使用的設備與一般的PECVD不同，稱此為射頻負偏壓磁控電漿輔助化學氣相沉積法，在基板加入射頻負偏壓，可控制負偏壓大小外，能夠有效鍍製類鑽碳薄膜沉積於非導體之基材。在此實驗中，利用拉曼光譜儀(Raman)和光電子能譜儀(XPS)量測分析與驗證類鑽碳薄膜特性。甲烷與六甲基二矽氧烷(hexamethyldisiloxane, HMDSO)作為反應氣體，摻雜Si-O結構於類鑽碳薄膜，透過改變HMDSO的流量控制矽氧化合物在膜中的含量。藉由施加偏壓，可以使純類鑽碳薄膜有更好的硬度，薄膜可以從200V的硬度8.16 GPa，加到400V的負偏壓時硬度可以到14.1 GPa，提升72%。參雜HMDSO 1.2 sccm後，薄膜穿透率可以從未參雜HMDSO的類鑽碳薄膜(60 nm)76.9% 提升至86.8 %。參雜HMDSO 0.9 sccm後，薄膜(60 nm)穿透率78.6 %，硬度8.6 Gpa比原本玻璃基板(6 GPa)提升43 %。

摘要(英)

Diamond-like carbon (DLC) thin films which were consisted of sp3 diamond structure and sp2 graphite structure is amorphous thin films. It could be protective coatings because of the excellent mechanical properties. But it limits its application for the high intrinsic compressive stress and poor tansmittance. Incorporation of DLC thin films improve the disadventages，and it could be used extensively.
The common process to coating DLC thin films is plasma enhances chemical vapor deposition (PECVD). There are some differences in my experiment instruments. It was named as magnetron plasma enhanced chemical vapor deposition via radio frequency bias. It could control negative bias independently and effectively deposit on the non-conductive substrate. Analyze by using Raman spectrometer and XPS, and verify the properties of the DLC thin films. The DLC thin films with dopping the Si-O structures were deposited in magnetron plasma enhanced chemical vapor deposition via radio frequency bias from the mixture of methane and hexamethyldisiloxane (HMDSO). According to the literatures, applying the negative bias cause the DLC films higher hardness. The pure DLC films applied on 200V negative bias were 8.16 GPa. However,the pure DLC films applied on 400V negative bias were up to 14.1 GPa and improve 72%. The transparency of the films(60 nm) doping 1.2 sccm HMDSO reaches 86.8 %,the transparency of the pure DLC films was 76.9%. The transparency of the films(60 nm) doping 0.9 sccm HMDSO reaches 78.6 %. The hardness of the films doping 0.9 sccm HMDSO were 8.6 GPa and rise to 43% compared with B270 glass substrate(6 GPa).

關鍵字(中)

★ 類鑽碳薄膜
★ 電漿輔助氣相沉積

關鍵字(英)

★ DLC
★ PECVD

論文目次

摘要 I
Abstract II
致謝 III
總目錄 IV
圖目錄 VI
表目錄 IX
第一章緒論 1
1-1 引言 1
1-2 研究動機 4
第二章基礎理論 5
2-1 類鑽碳薄膜之結構與分類 5
2-2 類鑽碳薄膜的成長機制 8
2-3 電漿基本原理 10
2-4 電漿輔助化學氣相沉積法 12
2-5 電漿聚合 12
2-6 奈米壓痕 15
第三章實驗架設與量測儀器 20
3-1 實驗流程 20
3-2 實驗介紹與步驟 21
3-3 量測儀器介紹 26
拉曼光譜儀(Raman Spectroscopy) 26
表面輪廓測定儀(α-step) 31
X射線光電子能譜儀(X-ray Photoelectron Spectroscopy, XPS) 32
紫外/可見/紅外光分光光譜儀 34
奈米壓痕儀 35
第四章實驗結果與討論 36
4-1 有無DC power中的射頻負偏壓大小對類鑽碳薄膜的影響 36
4-2 電漿功率對於類鑽碳薄膜的影響 43
4-3 甲烷對於電漿沉膜類鑽碳薄膜之影響 46
4-4 摻雜HMDSO對類鑽膜特性的影響 50
4-5 類鑽碳薄膜厚度不同時，類鑽碳薄膜特性之差異 54
第五章結論 57
參考文獻 58

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指導教授

郭倩丞、詹佳樺

審核日期

2017-7-27

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