探討以旋轉塗佈製程形成之硼矽合金層的生成現象及其對雙面矽晶太陽能電池之影響

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姓名

施芊妘(Chien-Yun Shih) 查詢紙本館藏

畢業系所

材料科學與工程研究所

論文名稱

探討以旋轉塗佈製程形成之硼矽合金層的生成現象及其對雙面矽晶太陽能電池之影響
(Study of formation of boron-rich layers using boron spin-on-dopant diffusion process and its impact on bifacial silicon solar cells)

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摘要(中)

在不同硼擴散源擴散過程中，經常會生成硼矽合金層(Boron rich layer, BRL)在硼矽玻璃(Borosilicate glass, BSG)與射極之間，其具有良好的去疵效應(Gettering effect)，但對於太陽能電池元件來說，BRL會造成嚴重複合使得反向飽和電流密度增加，且其存在會導致接觸電阻上升，因此會透過低溫氧化或是蝕刻的方式去除。
本研究利用旋轉塗佈之擴散源擴散形成N型雙面受光型太陽能電池之射極，觀察以不同濃度之擴散源形成的BRL情形，藉以探討其生成現象，並使用低溫氧化方式去除BRL，去除後反向飽和電流密度(Inverse saturation current density)由1.2x10-11 A/cm2降至4.5x10-13 A/cm2，接觸電阻(Contact resistivity)則從11.06 mΩ-cm2降至3.97 mΩ-cm2。
為了探討不同BRL厚度的變化會如何反應在太陽能電池元件，我們將不同氧化條件製作成雙面受光型太陽能電池，發現隨著BRL變薄，內部量子效率光譜響應圖中短波長的部份有明顯的提升，而在太陽能電池電性部份，隨著氧化時間的增長，短路電流密度(Jsc)提升4.2 mA/cm2；填充因子(FF)提升6.9%；轉換效率(η)則提升了1.7%。

摘要(英)

Most current B diffusion processes used to fabricate n-type solar cell result in the formation of BRL which is located between the borosilicate glass (BSG) and emitter region. The formation of BRL is effective at gettering, but it’s harmful to silicon solar cell performance. The recombination centers in the BRL cause saturation current density degradation, and as the thickness of BRL increases, the contact resistance value increases. Low temperature oxidation and chemical etching are often used to remove the BRL.
In this work, we used boron acid as spin-on dopants to form the emitter of n-type bifacial silicon solar cells. We observed the formation of BRL by different concentration boron acid and investigated the influence of removal of the BRL by low temperature oxidation on inverse saturation current density and contact resistivity. We obtained that removing the BRL reduce inverse saturation current density from 1.2x10-11 A/cm2 to 4.5x10-13 A/cm2. In addition, the contact resistance value decreases from 11.06 mΩ-cm2 to 3.97 mΩ-cm2.
In order to explore the effects of gradual removal of the BRL in the finished cell, we applied different oxidation conditions to bifacial solar cell. We observed that when the thickness of the BRL decreases, the IQE response increases in the short wavelength. As for the cell performance, it shown that the optimum oxidation condition raised the saturation current density by 4.2 mA/cm2; fill factor by 6.9%; the cell efficiency by 1.7%.

關鍵字(中)

★ 旋轉塗佈摻雜
★ 硼矽合金層
★ 雙面受光型太陽能電池

關鍵字(英)

★ Spin-on dopants
★ Boron rich layer
★ N-type bifacial silicon solar cells

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章緒論 1
1-1前言 1
1-2 研究背景 3
第二章文獻回顧 6
2-1太陽能電池的分類 6
2-1-1太陽能電池的世代 6
2-1-2 矽基太陽能電池分類 7
2-1-3 矽晶太陽能電池結構 7
2-2 太陽能電池基礎物理 11
2-2-1 太陽能電池運作機制 11
2-2-2 太陽能電池基礎參數 12
2-3 複合理論 18
2-4旋轉塗佈製程理論與回顧 21
2-4-1 固態擴散理論 21
2-4-2 去疵效應 23
2-4-2-1 磷擴散的表面去疵效應 23
2-4-2-2 硼擴散的表面去疵效應 25
2-4-3 旋轉塗佈擴散製程文獻回顧 26
2-4-4 Boron Rich Layer(BRL)文獻回顧 27
第三章研究方法 30
3-1 研究動機 30
3-2 實驗流程 30
3-3 基板粗糙化 31
3-4 擴散源溶液製備 32
3-5 X光光電子能譜儀分析 32
3-6 少數載子生命週期分析 33
3-7 雙面受光型太陽能電池開發 35
3-8 儀器分析 37
第四章結果探討 39
4-1 SOD摻雜源之BRL生成現象 39
4-1-1 BRL生成現象 39
4-1-2 不同溫度及擴散源濃度的BRL厚度分析 41
4-1-3 不同擴散源濃度對去疵效果分析 45
4-2 BRL之氧化條件分析 47
4-2-1不同氧化時間之去疵效果分析 47
4-2-2氧化前後之反向飽和電流密度分析 49
4-2-3 氧化前後之接觸電阻分析 50
4-3去除BRL之太陽能電池元件比較 51
第五章結論 54
參考文獻 55

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指導教授

陳一塵(I-Chen Chen)

審核日期

2018-8-23

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