平面式微型矽基熱電元件製作與研究

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姓名

蘇一華(Yi-Hua Su) 查詢紙本館藏

畢業系所

材料科學與工程研究所

論文名稱

平面式微型矽基熱電元件製作與研究
(Fabrication of Si-Based Planar Micro-thermoelectrics)

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摘要(中)

隨著電子元件操作功率、運算速度和積體電路密度不斷提升，元件操作時所產生之高溫將反噬電子元件的操作效能，而廢熱問題也愈顯明顯且重要，而熱電材料是一種能將電與熱直接互相轉換，因此我們希望能有效利用廢熱來產生電能。以現今半導體產業來說，若要將熱電材料元件整合於積體電路中以達到熱管理之功用，唯有使用矽基材料才可相容。本實驗室先前已針對矽奈米緞帶在SOI上的電導率與熱導率研究，因此本研究以矽奈米緞帶在SOI上作為材料基底。
將SOI試片透過氧化法將矽(Silicon)層減薄後進行一系列半導體製程(黃光微影、蝕刻、化學氣相沉積製程、金屬蒸鍍)製作出主動層厚度為100 nm且線寬為2 μm，線長為20 μm，分別在串聯的奈米緞帶上進行P型與N型重摻雜，在P與N型矽奈米緞帶連接處進行矽化反應形成NiSi金屬矽化物，最後以掀離製程完成白金線圈電極作為元件之加熱源與感測端。本實驗製作200對P型奈米緞帶串聯，在室溫300 K環境下，通以大電流產生焦耳熱而產生冷熱端溫差約 60 K，元件可產生Seebeck電壓150 μV。

摘要(英)

With the rapid miniaturization of electric devices to boost the switching speed and to increase the number of components per integrated circuit (IC) chip, performance and reliability of devices are severely threatened by the higher operating temperature. Besides, waste heat issue becomes more important. Thermoelectric materials can transform the energy between heat and electric directly. We wish it can recover the waste heat to produce the power. In today’s semiconductor industry, Si-based thermoelectric materials fit in ICs that we can make a proper thermal management. We have done the research of the electric and thermal conduction of nanoribbon on the SOI (Silicon On Insulator). Therefore, we choose the above material base in this research.
By doing a series of semiconductor manufacturing, we make a 100-nm-thickness, 2-μm-width, 20-μm-length active layer, followed by heavy doped of Boron and Phosphorus in P and N type semiconductor respectively. Form the Nickel Silicide on the junction of P and N, and make the Platinum sensing coil acting as heater and sensor by lift-off processes. We make 200 pair of P-type nanoribbon in series, which produces 150 μV Seebeck voltage by 60 K temperature difference.

關鍵字(中)

★ 矽
★ 微影製程
★ 熱電元件
★ 熱電發電

關鍵字(英)

★ Silicon
★ Photolithography
★ Thermoelectrics
★ Thermoelectric generator

論文目次

摘要 ............................................................................................................................... i
Abstract ....................................................................................................................... ii
致謝 ............................................................................................................................ iii
目錄 ............................................................................................................................ iv
圖目錄 ..................................................................................................................... viii
表目錄 ....................................................................................................................... xi
第一章緒論 .......................................................................................................... 1
1.1前言 ....................................................................................................................... 1
1.2熱電發展歷史 .................................................................................................... 2
1.3熱電效應原理 .................................................................................................... 4
1.4熱電優值(Figure of merit, ZT) ...................................................................... 7
1.5熱電發電器 ......................................................................................................... 9
第二章實驗配置 ................................................................................ 11
2.2實驗設置............................................................................................. 12
2.3實驗製程設備 .................................................................................... 14
2.3.1雷射光罩製作系統 ...................................................................... 14
2.3.2光罩對準曝光機 ..................................................................................... 14
2.3.3中電流離子佈植機 ...................................................................... 15
2.3.4低壓化學氣相沉積系統 .............................................................. 16
2.3.5旋轉塗佈機 .................................................................................. 17
2.3.6反應式離子蝕刻系統 .................................................................. 17
2.3.7 PECVD電漿輔助化學氣相沉積系統 ........................................ 18
2.3.8高真空電子束暨熱阻式蒸鍍系統 .............................................. 19
2.3.9紫外光臭氧清洗機 ...................................................................... 19
2.3.10表面輪廓儀 ................................................................................ 20
2.3.11快速熱退火系統 ........................................................................ 20 2.3.12半導體特性分析儀 .................................................................... 21
2.3.13鋁線銲線機 ................................................................................ 21
2.3.14掃描式電子顯微鏡 .................................................................... 22
第三章平面式微熱電元件製作..................................................... 26
3.1實驗步驟 ........................................................................................................... 26
3.1.1實驗試片準備 .............................................................................. 26
3.1.2第一道製程-對準圖形製作 ................................................................ 30
3.1.3第二、三道製程-N型與P型半導體離子佈植 ............................ 33
3.1.4第四道製程-定義元件主動層之區域 .............................................. 37
3.1.5第五道製程-LPCVD沉積氮化矽(SiNx)薄膜 ................................ 40
3.1.6第六道製程-以NiSi作為N型與P型矽半導體之連結 .......... 43
3.1.7第七道製程-E gun Thermal沉積鉑(Platinum)電極感測線圈 .. 47
3.1.8第八道製程-將元件下層二氧化矽(SiO2)掏空形成懸空結構 . 50
3.2熱電元件量測 ................................................................................................. 53
3.2.1製備熱電性質量測試片 ....................................................................... 53
3.2.2微熱電發電器量測方法 ....................................................................... 53
第四章結果與討論 ....................................................................................... 56
4.1 RIE乾蝕刻形成主動元件層 ...................................................................... 56
4.2離子佈植形成P.N型半導體 ..................................................................... 58
4.3 LPCVD沉積氮化矽(SiNx)與去除 ............................................................ 59
4.4沉積鎳金屬形成NiSi金屬連結 ............................................................... 60
4.5白金加熱線圈金屬電極 ............................................................................... 62
4.6元件主動層矽(Silicon)底部懸空製程 ..................................................... 63
4.7熱電發電效能 ................................................................................................. 64
第五章總結與未來展望 ............................................................................ 66
參考文獻 .................................................................................................................. 67

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指導教授

李勝偉(Sheng-Wei Lee)

審核日期

2017-9-27

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