參考文獻 |
[1] H. Lv; Y. Wang “Partition Triangle Meshes into Coarsely Quadrangular Segmentation,” Fuzzy Systems and Knowledge Discovery, 2008 FSKD ’08. Fifth International Conference , vol. 4,pp. 590-594, 2008.
[2] L. P. Chew. “Guaranteed-quality mesh generation for curved surfaces,” In
SCG ’93: Proceedings of the ninth annual symposium on Computational geometry, pp. 274–280, 1993.
[3] R. A. Jabr, M. Hamad, Y . M. Mohanna,“Newton-Raphson solution of Possion’s equation in a pn diode,” Int. J. Electrical Eng. Educ, Jan. 2007 .
[4] M. J. Zeng, “Development of Triangular element and its applications to arbitrary 2D Semiconductor device,” M.S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China,2014.
[5] D. A. Neamen, Semiconductor physics and devices,3^rded.,McGraw-Hill Companies Inc.,New York,2003.
[6] R. E. Bank, D. J. Rose, W. Fichtner, “Numerical methods for semiconductor device,” IEEE Trans, Electron Devices, vol. 30,no.9,Sep. 1983.
[7] J. A. Greenfield , R. W. Dutton, “Nonplanar VLSI Device Analysis Using the Solution of Poisson′s Equation,” IEEE Journal of Solid-State C, vol. 15, pp. 585 – 597, 1980.
[8] D. L. Scharfetter, H. K Gummel, “Large-Signal Analysis of a Silicon Read Diode Oscillator,” IEEE Trans. Electron Device, vol. 16, Jan. 1969.
[9] D. K. Cheng, “Field and wave electromagnetics, ” 2nd ed. Addison-Wesley Publishing Company, Inc. 1989.
[10] W. T. Shen, “Finding internal vector from the edge vector in obtuse triangle element for 2D Semiconductor Device Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, 2016.
[11] S. Jarvenpaa, M. Taskinen, P. Yla-Oijala, “ Singularity subtraction technique for high-order polynomial vector basis functions on planar triangles,” IEEE Transactions on Antennas and Propagation, vol. 56, pp. 42-49, 2006.
[12] M. Putti ,C. Cordes, “Finite Element Approximation Of The Diffusion Operator On tetrahedral ,” Society for Industrial and Applied Mathematics Vol. 19, No. 4, pp. 1154–1168, 1998.
[13] L. Liu, Z. Li, Y. You, J. Xu, “Two-dimensional analytic model for fully depleted surrounding gate metal-oxide-semiconductor field-effect transistor,” Hsi An Chiao Tung Ta Hsueh, pp. 73-77, 2011.
[14] S. M. Sze, K. K. Ng, “Physics of Semiconductor Devices ,” 3rd ed. John Wiley & Sons, Inc. New Jersey, 2007.
[15] J. R. Shewchuk, “Tetrahedral Mesh Generation by Delaunay Refinement ,” School of Computer Science Carnegie Mellon University Pittsburgh, Pennsylvania, 2015.
[16] Y. T. Zhang, C. W. Shu, “Third Order WENO Scheme on Three Dimensional Tetrahedral Meshes ,” Department of Mathematics, University of Notre Dame, Notre Dame, IN 46556-4618, USA, 2008.
[17] J. K. Hsu, “Finding the internal vector from the plane equation in obtuse triangle element for 2D Semiconductor Device Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, 2016. |