Characteristic of defect generated on graphene through pulsed scanning probe lithography

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劉哲瑋(Jhe-Wei Liou) 查詢紙本館藏

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物理學系

論文名稱

(Characteristic of defect generated on graphene through pulsed scanning probe lithography)

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摘要(中)

近年來，石墨烯低維度和高電子遷移率特性引起了人們的關注。然而，缺少能隙的特性成為石墨烯在電子元件應用上的障礙。在石墨烯上產生缺陷是調變石墨烯能隙的一種方法。掃描探針微影技術是一種便宜且容易發展的納米尺度技術，可以在石墨烯上局部的產生缺陷。

在我們以前的工作中，我們利用在探針上施加負偏壓，局部的氧化石墨烯。然而，使用掃描探針微影技術的氧化處理的細節尚不清楚。為了理解這一點，我們建構了脈衝掃描探針微影技術系統。這個系統擁有脈衝寬度、位置和輸出阻抗等精確的控制。

藉由這個系統，我們可以製造出點狀陣列，並且用拉曼和原子力顯微鏡測量。這兩種量測都指出這些點狀的缺陷是平均直徑為160nm的孔。而另一方面，藉由調變輸出阻抗而控制的最大電流。我們可以製造出環狀圖案。這明確的指出這些點狀的孔是由充電過程中過大的電流產生的，而少了這個過大的充電電流，環形圖案則是由電壓引起的電解而產生的。綜以上所述，點狀和環狀圖案表示充電過程中電流主導和電壓主導階段。

摘要(英)

Graphene has attracted attention in recent years because of low dimensional and high electron mobility. However, the gap-less feature is the main obstacle to further electronic application. Defect generation is one way to manipulate the band gap of graphene. To create defect on graphene, Scanning probe lithography (SPL) is a well-developed nano-meter scale technique. In our previous work, we formed graphene oxidation through negative bias SPL. However, the mechanism of the oxidation processing with SPL is still unveiled. To understand this, we set up a pulsed SPL system with precise pulse width, pulse treatment position control and the output impedance control. After point-like arrays are generated by pulsed SPL, both Raman and atomic force microscopy (AFM) measurements conclude that those defects are holes in average diameter 160 nm on graphene. In the limit of maximum current, ring-like patterns are generated. It indicates that the point-like holes are created by large charging current and that the ring patterns are caused by electrolysis which is driven by voltage. In summary, the point-like and ring-like patterns represent current dominant and voltage dominant phase in the charging process.

關鍵字(中)

★ 石墨烯
★ 缺陷
★ 掃描探針微影技術
★ 掃描探針顯微術

關鍵字(英)

★ graphene
★ defect
★ scanning probe lithography
★ scanning probe microscopy

論文目次

摘要 V
Abstract VI
List of figures VIII
Chapter 1 Introduction 1
Chapter 2 Background 4
2.1 Graphene 5
2.2 CVD growth graphene 10
2.3 Atomic Force Microscopy 12
2.4 Scanning probe lithography 16
2.5 Micro-Raman spectroscopy 22
2.6 X-ray Photoelectron spectroscopy 33

Chapter 3 Experiment 35
3.1 CVD process 36
3.2 Substrate clean process 37
3.3 Graphene transferred process 38
3.4 Pulse Scanning probe lithography 41
3.5 Micro-Raman spectroscope 42

Chapter 4 Result and Discussion 44
4.1 The defect spacing control 45
4.2 The pulse width control 47
4.3 The rise time control 53

Chapter 5 Conclusion 59

Reference 61

參考文獻

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指導教授

溫偉源(Wei-Yen Woon)

審核日期

2017-7-24

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