博碩士論文 105226005 詳細資訊




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姓名 陳佳愔(Chia-Yin Chen)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 高功率脈衝磁控濺鍍遠紅外線抗反射膜之研究
(Research on the Anti-reflection Coating for the Far-infrared Applications by High-Power Impulse Magnetron Sputtering Method)
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   至系統瀏覽論文 (2023-9-1以後開放)
摘要(中) 使用紅外線熱影像量測太陽能電池已成為太陽能電池研究重點之一,尤其在歐洲已經逐漸成為電站驗收與維運的標準測試項目。本研究目標在製作遠紅外線抗反射光窗輔助熱影像儀檢測太陽能電池。重點在於利用高純度的矽晶圓當作光窗基板,並鍍上高低折射率堆疊的紅外線光學膜;高純度的矽晶圓在紅外線波段的光學穿透率高,且成本較鍺晶圓低,適合當作新一代的紅外線光窗材料。此外,配合高低折射率的抗反射光學膜可增加矽晶圓的紅外線穿透率。傳統使用的遠紅外線光學膜材料大多有毒性或放射性,因此本研究使用非毒性與非放射性氧化鋅搭配純矽當作低與高折射率材料,並使用高能磁控濺鍍系統,將氧化鋅薄膜及矽薄膜維持在固定的折射率,穩定製程。最後透過柯西公式以及多層膜的堆疊設計達到抗反射的效果。抗反射膜的樣品在7-9 um的平均穿透率高達86.83 %,位於7.98 um 波長有最高的穿透率93.10 %。
摘要(英) As demand increases the far-infrared thermal image sensor with the anti-reflection coating is one of the hot topics of the standard testing for solar cells. In this research a high purity silicon wafer was applied to be the substrate of the far-infrared window with an anti-reflective coating. The high purity silicon wafer is a high optical-transmittance material in the infrared range like Germanium but with lower price. Besides, when the far-infrared window was deposited high and low refractive index optical thin films as the anti-reflection coating, the transmittance of infrared range can be improved. Most of the materials used for the far-infrared optical films are toxic or radioactive. In this study, non-toxic and non-radioactive zinc oxide and pure silicon thin films were used as the low and high refractive index materials. The high-power impulse magnetron sputtering system was used to fabricate zinc oxide and silicon thin films with stable refractive indices. Finally, the anti-reflective coating was achieved by applying the Cauchy formula and the multilayer design. The average transmittance of the anti-reflective sample is 86.83 % at wavelength 7-9 um. And the maximum transmittance is 93.10 % at 7.98 um.
關鍵字(中) ★ 紅外線
★ 抗反射膜
★ 熱影像
★ 熱輻射
★ 氧化鋅
★ 矽
★ 高功率脈衝磁控濺鍍
關鍵字(英) ★ Infrared
★ Anti-reflective film
★ Thermal image
★ Thermal radiation
★ Zinc oxide (ZnO)
★ Silicon (Si)
★ HiPIMS
論文目次 目錄
摘要 i
ABSTRACT ii
誌謝 iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 緒論 1
1-1 前言 1
1-2 實驗動機 3
第二章 基本理論 7
2-1 氧化鋅(ZnO)的材料特性與應用 7
2-2 矽(Si)的材料特性 9
2-3 薄膜製程的原理與機制 12
2-3.1 濺射原理 14
2-3.2 輝光放電 14
2-3.3 磁控濺鍍系統 15
2-4 高能脈衝磁控濺鍍系統 15
2-5 反應式磁控濺鍍 17
2-6 光學多層膜設計理論 17
第三章 實驗流程與儀器架構 20
3-1 實驗流程 20
3-2 鍍膜實驗設備 22
3-3 量測儀器 23
3-3.1 U-4100落地型紫外可視近紅外光譜儀 23
3-3.2 FTIR傅立葉轉換紅外光譜儀 24
3-3.3 SEM掃描式電子顯微鏡 26
第四章 實驗結果與討論 28
4-1 氧氣(O2)流量對ZnO薄膜的影響 29
4-2 功率對ZnO薄膜的影響 34
4-3 儲能時間對ZnO薄膜的影響 38
4-4 功率對Si薄膜的影響 42
4-5 儲能時間對Si薄膜的影響 45
4-6 多層膜 49
第五章 結論 55
參考文獻 56
參考文獻 參考文獻
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指導教授 陳昇暉 曹昭陽(Sheng-Hui Chen Chao-Yang Tsao) 審核日期 2019-8-26
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