博碩士論文 105226069 詳細資訊




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姓名 陳聖文(Sheng-Wen Chen)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 矽鍺薄膜應用於近紅外光石墨烯光偵測器
(Investigation of SiGe thin films for the Application of Near Infrared Graphene Photodetector)
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摘要(中) 本論文主旨為製作矽鍺薄膜應用於近紅外光石墨烯電極光偵測器,並加以量測及分析。鍺的吸收波段恰可應用於光通訊常用之近紅外光波長,但因為鍺晶圓價格昂貴,若能將矽鍺薄膜成長於矽基板作為替代基板,將大幅降低成本,故利用熱退火方式矽擴散進入鍺薄膜內使其鍵結,而形成矽鍺薄膜後,可調變光學能隙,延伸吸收波長。

一般而言會用金屬作為光偵測器之電極,但會影響受光面積,造成光損耗,所以本研究使用石墨烯作為光偵測器之電極,此優異的薄膜特性及光學穿透率,尤其單層石墨烯在紅外光區高達98.2 %穿透率,近乎透明,藉此提升主動層之照光面積,提升光電流,本實驗使用矽鍺薄膜作為光偵測器主動層,在雷射光波長1310 nm下,響應度可達到0.25 mA/W,其光暗電流比也有明顯區別。
摘要(英) In this research, silicon germanium thin films for the application of the near infrared graphene electrode photodetector were fabricated, measured, and
analyzed. Germanium is a material for the near infrared wavelength applications, such as optical communication. However, the high cost of germanium wafer make it difficult to be commercialized. To reduce the cost, a silicon germanium thin film has been grown on the silicon substrate as a virtual germanium substrate. Silicon is diffused into the germanium thin film by using thermal annealing method, to form the silicon germanium thin film, whose optical energy gap can be increased, and the absorption wavelength is extended.
Another way to improve the property of silicon germanium photodetector is replacing the metallic electrodes as graphene ones. Normally, the metallic electrodes were utilized for the photodetectors. However, a part of light was blocked for the opaque property. In this study, graphene has been used as the electrodes of the photodetector. Because of its excellent characteristic of optical transmittance. The transmittance of a monolayer graphene in the infrared light region is up to 98.2% which can increase the absorption area and the photocurrent. Finally, the responsivity of the silicon germanium photodetector was achieved 0.25 mA/W for the wavelength 1310 nm.
關鍵字(中) ★ 矽鍺
★ 石墨烯
★ MSM光偵測器
關鍵字(英) ★ SiGe
★ graphene
★ photodetector
論文目次 摘要 I
ABSTRACT II
致謝 III
圖目錄 VII
表目錄 X
第一章 緒論 1
1-1 前言 1
1-2 研究動機與目的 2
第二章 基礎理論及文獻回顧 5
2-1 石墨烯簡介 5
2-1-1石墨烯發展與應用 6
2-1-2 石墨烯結構與特性 8
2-1-3 石墨烯製作方法 11
2-2 矽鍺材料簡介 15
2-2-1 矽鍺材料發展與應用 16
2-2-2 矽鍺材料結構與特性 18
2-3光偵測器簡介 21
2-3-1金屬-半導體接面 21
2-3-2 MSM結構工作原理 24
2-3-3 光偵測器特性 26

第三章 實驗製程和設備與分析儀器 27
3-1 實驗製程 27
3-1-1 石墨烯製作流程 27
3-1-2 矽鍺薄膜製作流程 30
3-1-3 元件製作流程 31
3-2 製程設備 32
3-2-1 濺鍍設備 (Sputter System) 32
3-2-2 電子束暨熱阻式蒸鍍系統 (E-gun Thermal) 34
3-2-3 光罩對準曝光機 (Mask Aligner 6) 34
3-2-4 蝕刻系統 (Etching) 35
3-2-5 熱退火系統 (Thermal Annealing) 35
3-3 分析儀器 36
3-3-1 原子力顯微鏡 (Atomic Force Microscope,AFM) 36
3-3-2 拉曼光譜儀 (Raman Spectrum) 37
3-3-3 可見光-近紅外光光譜儀 (VIS-NIR Spectrum) 38
3-3-4 霍爾效應分析儀 (Hall Effect Analyzer) 38
3-3-5 X光線繞射分析儀 (X-ray Diffraction,XRD) 40
3-3-6 響應度量測系統 (Responsivity) 41
第四章 結果與討論 42
4-1 石墨烯導電膜分析 42
4-1-1 拉曼光譜 43
4-1-2 光學穿透率與電性分析 44
4-2 矽鍺薄膜分析 46
4-2-1 n型(摻銻)鍺薄膜調變退火溫度 47
4-2-2 本質鍺薄膜調變退火溫度 51
4-2-3 本質鍺薄膜調變退火時間 56
4-3 矽鍺光偵測器元件 61
4-3-1 光電特性量測 62
4-3-2 響應度 63
4-3-3 電容電壓量測 65
第五章 結論與未來工作 67
5-1 結論 67
5-2 未來工作 68
參考文獻 69
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指導教授 陳昇暉(Sheng-Hui Chen) 審核日期 2018-11-30
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